2SA1412 Search Results

2SC3631

Abstract: 2SC3631Z 2SA1412-Z 2SC3631-Z TC1664A
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3631-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3631-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 400 V tf < 0.7 s • Complement to 2SA1412-Z

D1825

Abstract: 2sc3631 2SA1412-Z 2SC3631-Z 2sa1412
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SA1412-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage: VCEO = −400 V • High Speed: tf ≤ 0.7 s • Complement to 2SC3631-Z

KT835A

Abstract: b0330 MJ032 MJ-03 b0362 2SA699A matsua 2N3171 KT83 kt835 M0810
Contextual Info: POWER SILICON PNP Item Number Part Number 10 15 20 25 30 >= 1 A, SK3624 2N6421 MJ3584 BUX66A BUX66A 2N6211 MJ3585 2N6422 MJ4240 MJ4240 2 2 BUX66B BUX66B BUX66C BUX66C 2N6212 2SA1009M SPT6145 2SA1009K 2SA1009J 2 2N6213 2N6214 2SA1009AM 2SA1009AL 2SA1009AK 2SA1412Z

Contextual Info: S IL IC O N T R A N S IS T O R 2SA1412-Z PNP SIL IC O N TRIPLE DIFFU SED T R A N SIST O R M P -3 D E S C R IP T IO N 2 S A 1 4 1 2 - Z is designed for High V oltage Sw itching, especially in H yb rid Integrated Circuits. FEATURES PACKAG E DIMENSIONS H igh Voltage : V q e o = - 4 0 0 V

POWER TRANSISTORS 10A 400v pnp

Abstract: MARKING SMD PNP TRANSISTOR 2a Tr K 970 smd MARKING 015 pnp TRANSISTOR 2SA1412 high voltage TRANSISTOR SMD 1a 9 smd transistor marking 03 2SA1412-Z 400v 150u pnp 400v 10a
Contextual Info: Transistors SMD Type PNP Silicon Transistor 2SA1412-Z 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15

2SA1412

Abstract: D1825 1412 1412-Z
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SA1412,1412-Z PNP 三重拡散形シリコン・トランジスタ 高速度高耐圧スイッチング用 特 徴 外形図（単位：mm） ★ 6.5 ±0.2 5.0 ±0.2

Contextual Info: Transistors SMD Type Product specification 2SA1412-Z 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2

MARKING J1A

Abstract: 2SA1412-Z 2SC3631-Z MEI-1202
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 2SA1412-Z is designed for High Voltage Switching, especially PACKAGE DIMENSIONS in millimeters in Hybrid Integrated Circuits. FEATURES • High Voltage :

Contextual Info: û ft i « S H E fc î SILICON TRANSISTOR 2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTIO N 2S A 1 4 1 2 -Z is d e sig n e d fo r H ig h V o lta g e S w itc h in g , e sp e c ia lly PACKAGE DIMENSIONS in m illim eters in H y b rid in te g ra te d C irc u its .

D1825

Abstract: 2SA1412-Z 2SC3631-Z 2SA1412
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

2sk520

Abstract: 3sk131 cross 2S880 TRANSISTOR AF 416 pnp 2SK738 2SK739 3SK133A 2sc3554 transistor pnp 3906 2SK508
Contextual Info: TY P E NO. CROSS IN D E X TYPE No. A PPLIC ATIO N & STRUCTURE PACKAGE PAGE 1S2835 ANODE COMMON SWITCHING DIO DE M IN I MOLD 83 1S2836 ANO DE COMMON SWITCHING DIODE M IN I MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE M IN I MOLD 86 1S2838 CATHODE COMMON SWITCHING DIOOE

TXAL 228 B

Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Contextual Info: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X

K1273

Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587
Contextual Info: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

FR91

Abstract: 2SA1412 2SA1412-Z ge311
Contextual Info: ~ r— — S S ilic o n T r a n s is to r s 2 S A 1 4 1 2 , 1 4 1 2 - Z P N P = a î Æi f c U = l> h ^ > '> x ^ iü jE ilt iü ii/ ± X ^ T # ^ it o iHj S i EE T " ^ o Vceo~~400 V o x -f y f y t f < 0 .7 / x f - K * 5'jS V^0 ¡u s anS T k^f nang 7 K ¥ t ^ O T J ^ f f l^ i? O T # if f liC O l. 'T l± â :î:± % : T(7 Kf4 r N E C ^ ii # 7 :iVS'-f ^OTnanH7K2pj(lEI-620)

BUX79

Abstract: SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE on PD Max hFE fT ON) Min (Hz) ICBO t()N r Max Max (A) (s) Max (Ohms) (CE)sat T Oper Package Style Max (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

2SB1545

Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
Contextual Info: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970