2SA1508 Search Results

F 21021 PC

Abstract: transistor npn d 2058 C3898 2SA1508 2SC3898 7226a 2018a 2SC 1508 bau 95 sanyo la
Contextual Info: SAN YO S E M I C O N D U C T O R CO RP 2SA1508, 2SC3898 22E D 7T ì 7 0 7 b 0007334 1 T-37-13 T-3S-// “ PN P /N PN Epitaxial Planar Silicon Transistors 201 8A Switching Applications with Bias Resistance R1=47kß 2102A Applications . Switching circuits, inverter circuits, interface circuits, driver circuits

2SA1573

Abstract: 2sc3898 2SA1563
Contextual Info: s tu m R e si st ance-Containe d Transistor Seri e s RA or RC Type F e a t u r e s . ★ On-chip bias resistance ★ Small-sized package (MCP) ★ Both PNP and NPN types are available A p p l i c a t i o n s . ★ SW circuit. ★ Inverter circuit ★ Interface circuit ★ Driver circuit.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc3855

Abstract: 2SC3858 2SC3898 2sa1494 2SC3859 2SA1491 2SA1492 2SA1493 2SA1495 2SC3856
Contextual Info: - m fT Vc e V (MHz) ton tf (Ms) m tstg (m s ) (m s ) ft Cob (max) (pF) tt ( 1 3 = 2 5 * 0 Cre (max) (pF) il [*EPfätypfiI3 Œ g □ y-fv 14 ;lJj Ê ft m # mm mm m % M £ -12 -0.5 0.3* 0. 2* 0.9* 2SC3855 (MT100) BCE 2SA1491 -12 -0.5 0.6* 0.2* 0.9* 2SC3856

rc105Q

Contextual Info: saU yo Resistance-Contained Transistor Seri e s RA or RC Type F e a tu re s. ★ On-chip bias r e sis ta n ce ★ Small-sized package (MCP) ★ Both PNP and NPN types are available A p p l i c a t i o n s . ★ SW c i r c u i t . ★ Inverte r c i r c u i t ★ I nter face c i r c u i t ★ Driver ci rc ui t.

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SB1223

Abstract: 2SB1224 2SB1225 2SB1226 2SB1227 2SD1825 2SD1826 2SD1827 2SD1828 2SD1829
Contextual Info: Continued from previous page A bsolut« m axim um ratings Device Package A pplications m » Vcbo VCEO Vebo V (V) <V> *_ *c m ! Electrical characteristics (Ta = 25 °C) le s o m ax @ V cb Æ Pe (W) tc s o max h re @ V ce • t e _ Vc b (V) h re fc*A)

2SA1508

Abstract: FC123 marking 123
Contextual Info: Ordering number:EN3277 FC123 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SA1343

Contextual Info: b3E D TTTTGTb O Q l S H n SA0YO ITSAJ 433 R e s i s t a n c e - C o n t a i n e d T r a n s i s t o r S e r i e s R A o r R C Type F e a t u r e s . ★ On-chip bias resistance ★ Small-sized package (MCP CP, SPA) A p p l i c a t i o n s . ★ SW circuit. ★ Inverter circuit ★ Interface circuit

2SA1508

Abstract: FC125
Contextual Info: Ordering number:EN3279 FC125 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SA1508

Abstract: D059 FC123 ITR10501 ITR10502 ITR10503 ITR10504
Contextual Info: 注文コード No. N 3 2 7 7 FC123 No. N3277 71000 FC123 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用（バイアス抵抗内蔵） ・バイアス抵抗内蔵（R1=47kΩ） 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2SA1508

Abstract: FC123
Contextual Info: Ordering number:EN3277 FC123 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

Contextual Info: Ordering number : EN3277 F C 1£ 3 P N P E p itax ial P la n a r Silicon C om posite T ra n s is to r Switching Applications with Bias Resistance F e a tu re s • O n-chip b ias re sistan c e (R1 = 47kQ) • C om posite type w ith 2 tra n s is to rs contained in th e CP package c u rre n tly in u se, im p ro v in g th e

EN3279

Contextual Info: Ordering number : EN3279 r No.3279 FC125 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications _ with Bias Resistance Features • On-chip bias resistance (R1 “ 47kfi) • Composite type with 2 transistors contained in the CP package currently in use, improving the

rc114

Abstract: RA104Q 2SA1571 2SA1597 2SC3398
Contextual Info: SA\YO R e s i s t a n c e - C o n t a i n e d T r a n s i s t o r S e r i e s R A or R C Type F e a tu r e s ★ O n-chip b ia s A p p 1i c a t ★ ★ S m a ll- s iz e d package (MCP) In v e r t e r c i r c u i t Type No. Package C ★ ★ Both PNP and NPN types a re a v a ila b le

2SC3883

Abstract: 2S-C3883 2SC3888 2SC3881 2SC3858 2SC3884 2SC3885 2sc3886 2SC3887 2SC3855
Contextual Info: - 17 6 - m Ta=25‘C, *Eí](áTc=25cC M 2SC3853 2SC3854 2SC3855 2SC3856 2SC3857 2SC3858 2SC3859 2SC3860 2SC3862 2SC3863 2SC3864 2SC3865 2SC3866 2SC3867 2SC3868 2SC3869 2SC3870 2SC3871 2SC3872 2SC3873 2SC3874 2SC3883 2SC3884 2SC3885 2SC3886 2SC3887 2SC3888

DSB010

Abstract: DSD010 DSC010 2sa1571 2SK1375 DSA010 CAPACITOR MICROPHONE 2SC4146 2SC4047 2SC4066
Contextual Info: Ordering number: EN 5324A No.5324A SAßiYO Notification of the Designation of Maintenance and Obsolete Discrete Devices Affected Products : Products listed below Thank you for your continued use of SANYO semiconductor products. This notice announces the designation of maintenance and obsolete SANYO semiconductor products. Please make

ITR10510

Abstract: 2SA1508 D059 FC125 ITR10509 ITR10511 ITR10512
Contextual Info: 注文コード No. N 3 2 7 9 FC125 No. N3279 71000 FC125 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用（バイアス抵抗内蔵） ・バイアス抵抗内蔵（R1=47kΩ） 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。

EN3279

Abstract: 2SA1508 FC125
Contextual Info: Ordering number:EN3279 FC125 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.