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    2SA1680 TRANSISTOR Search Results

    2SA1680 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2SA1680 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680
    Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. transistor A1680 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680 PDF

    Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. PDF

    transistor A1680

    Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR
    Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. transistor A1680 A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR PDF

    transistor A1680

    Abstract: 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680
    Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. transistor A1680 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680 PDF

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR A1680
    Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. O-92MOD transistor A1680 2sa1680 TRANSISTOR A1680 PDF

    Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		2SA1680 2SC4408. PDF

    LED display module

    Contextual Info: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is M ulti Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED


    OCR Scan     		TD62M8604AF TD62M8604AF 2SA1680) HSOP16 LED display module PDF

    transistor 2SA1680

    Abstract: 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR
    Contextual Info: 2SA1680 TO SH IBA 2 S A 1 680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )


    OCR Scan     		2SA1680 900mW 300ns 2SC4408. O-92MOD transistor 2SA1680 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR PDF

    Contextual Info: T O SH IB A 2SA1680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm 5.1 M AX • Low Collector Saturation Voltage : V cE (sat) = - 0 .5 V (Max.) (IC = - 1A) •


    OCR Scan     		2SA1680 900mW 300ns 2SC4408. 961001EAA2' PDF

    2sc4793

    Abstract: 2SC2482 2SA1145 2SC2705 2sa1680 2SA1837 2sc2655 npn general purpose transistors application 2sd201
    Contextual Info: contents www search print index quit Power Devices ➔ ➔ • Standard Bipolar Transistors Medium Power Unit in mm LSTM TO-92 MOD VCEO PNP (V) 2SA1020 2SA1680 2SA1145 49.1 49.1 49.2 IC P hfE@ VCE (V) NPN 2SC2655 2SC2482 2SC4408 2SC2705 50 300 50 150 (A)


    Original     		2SA1020 2SA1680 2SA1145 2SC2655 2SC2482 2SC4408 2SC2705 O-220 2SA1837 2sc4793 npn general purpose transistors application 2sd201 PDF

    TD62M8604AF

    Abstract: 2SA1680 HSOP16
    Contextual Info: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 HSOP16 PDF

    Contextual Info: TO SHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED


    OCR Scan     		TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 OU05-15 HSOP16-P-300-1 PDF

    Contextual Info: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		TD62M8604AFG TD62M8604AFG 2SA1680) HSOP16 PDF

    13002 FL

    Contextual Info: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This 1C is suitable for a battery use motor drive and LEE


    OCR Scan     		TD62M8604AF TD62M8604AF 2SA1680) HSOP16 HSOP16-P-300-1 13002 FL PDF

    Contextual Info: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		TD62M8604AF TD62M8604AF 2SA1680) HSOP16 PDF

    Contextual Info: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		TD62M8604AFG TD62M8604AFG 2SA1680) HSOP16 2006-06nt PDF

    Contextual Info: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		TD62M8604AFG TD62M8604AFG 2SA1680) HSOP16 PDF

    8ch LOW SATURATION DRIVER

    Abstract: HSOP16 2SA1680 TD62M8604AF IN4116
    Contextual Info: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LEE


    OCR Scan     		TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 HSOP16-P-300-1 8ch LOW SATURATION DRIVER 2SA1680 IN4116 PDF

    TD62M8604AF

    Abstract: 2SA1680 HSOP16
    Contextual Info: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 HSOP16 PDF

    A1680

    Abstract: transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680
    Contextual Info: TOSHIBA 2SA1680 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. Unit in mm 5.1 MAX • Low Collector Saturation Voltage : v CE(sat)= - 0 .5 V (Max.) (1^ = -1 A ) • High Collector Power Dissipation : Pg = 900mW (Ta = 25°C)


    OCR Scan     		2SA1680 900mW 300ns 2SC4408. 961001EAA2' A1680 transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680 PDF

    Contextual Info: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT • v ■ V ■ ■ MULTI CHIP * m ■ 8ch LO W SATURATION VOLTAGE SOURCE DRIVER The TD62M 8604AF is M u lti C hip 1C in co rp o ra tes 8 lo w sa tu ra tio n discrete PNP : 2SA1680 transistors.


    OCR Scan     		TD62M8604AF TD62M 8604AF 2SA1680) HSOP16 HSOP16-P-300-1 PDF

    Contextual Info: 2SA1680 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • 5.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)


    OCR Scan     		2SA1680 900mW 300ns 2SC4408. 75MAX 961001EAA2' PDF

    A1680

    Abstract: transistor A1680 2SC4408 2SA1680
    Contextual Info: TO SH IBA 2SA1680 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 5.1 MAX. • Low Collector Saturation Voltage : V(TE(sat)“ —0.5V (Max.) (If;= —1A) • High Collector Power Dissipation : Pç; = 900mW (Ta = 25°C)


    OCR Scan     		2SA1680 900mW 2SC4408. 300ns A1680 transistor A1680 2SC4408 2SA1680 PDF

    TO-3P

    Abstract: 2SC3303 2sc3783 2sc3233 2sc2562 2sa1329 2sd717 2sc2655 2sb754
    Contextual Info: Transistors Industrial use Regulator T ransistors F1 Appli­ cation £ 3 9 Max Rating (Tc=25"C) Type No. V obo{V) VCHO(V) 10(A) Appli­ cation Package Pc(W) TJCO Max Rating (Tc=25*C) Type No. V c b o (V) VCEO(V) Package lc(A) Pc(W) 2SC3075 0.8 10 Power Mold


    OCR Scan     		2SC3075 2SC3425 2SC3233 2SC507S 2SC4917 O-126 O-220AB T0-220 TO-3P 2SC3303 2sc3783 2sc2562 2sa1329 2sd717 2sc2655 2sb754 PDF