2SA1700 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1700 TRANSISTOR PNP TO-252 FEATURES z High Breakdown Voltage z Adoption of MBIT Process z Excellent hFE Linearity 1.BASE 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA1700

Abstract: QW-R213-011
Contextual Info: UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 TO-251 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

2SA1700

Abstract: 2044B ITR04202 ITR04203 ITR04204
Contextual Info: 注文コード No. N 2 9 7 4 A 2SA1700 No. N2974A 20400 ＊半導体ニューズ 2974 とさしかえてください。 2SA1700 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高耐圧ドライバ用 ・高耐圧である。

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR H I GH V OLT AGE DRI V ER APPLI CAT I ON ̈ FEAT U RES * High breakdown voltage. * Excellent hFE linearity. ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free 2SA1700L-x-TM3-T

2SA1700

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SA1700 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM : 1 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current : -200 mA ICM Collector-base voltage V V(BR)CBO : -400

2SA1700

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SA1700 TRANSISTOR PNP TO-251 TO-252-2L FEATURES z High breakdown voltage z Adoption of MBIT process z Excellent hFE linearity 123 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

RB200

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION „ FEATURES * High breakdown voltage. * Excellent hFE linearity. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T

2SA1700

Abstract: TRANSISTOR A30
Contextual Info: UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 TO-252 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

TRANSISTOR A30

Abstract: 2SA1700 c2535 B1032
Contextual Info: UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 TO-252 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SA1700 TO-251 TRANSISTOR PNP FEATURES Power dissipation PCM 1. BASE : 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400

2SA1700

Contextual Info: 2SA1700 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

2SA1700

Contextual Info: 2SA1700 2SA1700 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM : 1 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -200 mA Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 TO-251 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

2SA1700

Abstract: 2044B 29744
Contextual Info: Ordering number:EN2974A PNP Epitaxial Planar Silicon Transistor 2SA1700 High-Voltage Driver Applications Features • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2045B [2SA1700] 1 : Base 2 : Collector

2SA1700

Contextual Info: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 2SA1700 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM : 1 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current : -200 mA ICM Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range

Contextual Info: Ordering number: EN 2974A 2SA 1700 No.2974A J SAXYO = P N P E p ita x ia l P la n a r S ilicon T ra n s is to r High-Voltage Driver Applications i F eatures . H ig h b reak d o w n voltage • A doption of M B IT pro cess • E x c e lle n t hpE lin e a rity

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

2sb892

Abstract: 2sc4645 2sC4389 2SB1406
Contextual Info: SASYO NMP New MPJTransistor Series * Small-sized package containing the same chip that has been so far placed in * Small-sized package making it possible to make application setssmaller and * Can meet tape-used automatic mounting requirements. * Full line-up of products for wide application.

2044B

Abstract: 2SA1700
Contextual Info: Ordering number : EN 2974A _2 S A 1 7 0 0 PNP Epitaxial Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A bsolute M axim um R atings at Ta = 25°C

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *