2SA200 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2009G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency high breakdown voltage amplification • Package • High collector-emitter voltage (Base open) VCEO

2SA2006

Abstract: 2SA1952 2SA1906 2SC5103 2SC5525 SC-83A
Contextual Info: 2SA1952 / 2SA1906 / 2SA2006 Transistors High-speed Switching Transistor −60V, −5A 2SA1952 / 2SA1906 / 2SA2006 !External dimensions (Units : mm) !Features 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC / IB = −3 / −0.15A)

Contextual Info: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE

2SC5526

Abstract: SWITCHING TRANSISTOR 60V 2SA2007 transistor A6A
Contextual Info: 2SA2007 High-speed Switching Transistor -60V-12A 2SA2007 •External dimensions (Units : mm) •Features 1) High switching speed. (Typ. tf=0.15,us at Ic= -6A) 2) Low saturation voltage. (Typ. VcE(sat)= -0 .2 V at Ic / Ib = -6 A / -0.3A )

2SA2005

Abstract: 160V 2SC5511
Contextual Info: 2SA2005 Transistors High-voltage Switching Audio output amplifier transistor, TV velocity modulation transistor (−160V, −1.5A) 2SA2005 !Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = −160V) 3) High fT. (Typ. 150MHz)

2sa2005

Abstract: 2SC5511 transistor 160v 1.5a pnp velosity
Contextual Info: 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation −160V, −1.5A 2SA2005 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Electrical characteristics of DC current gain hFE is flat.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2009G Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV

2SA2004

Contextual Info: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage

2SA2009

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2009 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10

2SA20

Abstract: 2SA2005 velosity
Contextual Info: 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation 160V, 1.5A 2SA2005 Structure PNP Silicon Epitaxial Planar Transistor External dimensions (Unit : mm) ÌÑóîîðÚÒ ìòë ïðòð íòî Features 1) Electrical characteristics of DC current gain hFE is flat.

2SA2009

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2009 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2

Contextual Info: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5 • Features ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage Emitter open

2SA2004

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA200

Abstract: 2SA2004
Contextual Info: Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2009 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1

2SA2009G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2009G Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV

2SC5526

Contextual Info: 2SA2007 Transistors High-speed Switching Transistor −60V,−12A 2SA2007 !External dimensions (Units : mm) !Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat) = −0.2V at IC / IB = −6A / −0.3A)

2SA2009

Contextual Info: Transistors 2SA2009 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High collector to emitter voltage VCEO • Low noise voltage NV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2009 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10

2SA2009

Abstract: sc70s
Contextual Info: Transistors 2SA2009 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High collector to emitter voltage VCEO • Low noise voltage NV

2SC5103

Abstract: 2SC5525 2SA2006 2sa200 2SA1952
Contextual Info: 2SC5103 / 2SC5525 Transistors High-speed Switching Transistor 60V, 5A 2SC5103 / 2SC5525 !Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952 / 2SA2006.

2SA2007

Abstract: 2SC5526
Contextual Info: 2SA2007 Transistors High-speed Switching Transistor −60V,−12A 2SA2007 !External dimensions (Units : mm) !Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat) = −0.2V at IC / IB = −6A / −0.3A)

2sa2005

Abstract: Audio Output Transistor Amplifier TO-220FN 2SC5511
Contextual Info: 2SA2005 Transistors High-voltage Switching Audio output amplifier transistor, TV velocity modulation transistor (-160V, -1.5A) 2SA2005 ! External dim ensions (Units : mm) ! Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVceo = - 1 60V)

2SA2009

Contextual Info: Transistors 2SA2009 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • High collector-emitter voltage (Base open) VCEO