2SA608N Search Results

2SA608N

Contextual Info: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ․Capable of being used in the low frequency to

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA608N TRANSISTOR PNP 1. EMITTER FEATURES z Large Current Capacity and Wide ASO. 2. COLLECTOR 3. BASE APPLICATIONS z Capable of Being Used in The Low Frequency to High

2SA608N

Contextual Info: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to

2SA608N

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608N TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -60

2SA608N

Contextual Info: 2SA608N 2SA608N TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.15 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

2SA60

Abstract: 2SA608N 2SC536N IT00504 IT00498 2SC536
Contextual Info: Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Capable of being used in the low frequency to high frequency range. unit:mm 2164 [2SA608N/2SC536N]

Contextual Info: 2SA608N PNP Plastic-Encapsulate Transistors TO-92 Features Power dissipation PCM : 0.5 W Tamb=25℃ Collector current ICM : -0.15 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE

2SA608N

Contextual Info: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to

2SA608N

Abstract: 2SA608NF
Contextual Info: 2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Large current capacity and wide ASO. G H APPLICATIONS  Capable of being used in the low frequency to

2SD1028

Abstract: 2SK1597 2SK917 2SC1025 2SK919 2SB823 2SD977 2SC1051P 2SA1019 3SK190
Contextual Info: LIST O F D I S C O N T I N U E D T R A N S I S T O R S The following is an alpha-numerical list of the discontinued products as of October 31,1993. Type Number Replacement Type Number Replacement Type Number 2SA608SPA 2SA608NP 2SA608K-NP 2SA659 2SA930 2SA1017

2SA608N

Contextual Info: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to

C536 NPN TRANSISTOR

Abstract: C536 transistor transistor C536 A608 transistor pnp transistor A608 2SA608N 2SC536NF-NPA-AT transistor npn C536
Contextual Info: Ordering number : EN6324B 2SA608N/2SC536N Bipolar Transistor http://onsemi.com – 50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Applicaitons • Capable of being used in the low frequency to high frequency range Features • Large current capacity and wide ASO

BC558AP

Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A

2SA60

Abstract: 2SA608N 2SC536N 2SC536 TA-100055
Contextual Info: Ordering number : ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Capable of being used in the low frequency to high frequency range.

2SA608N

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA608N TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

2SA608

Abstract: 2SC536 transistor 2sa608 2005A 2SA60 2SA608 D 2SA1782 2SA608KNP 2SA608NP 2SA608SPA
Contextual Info: SANYO S EM I CO ND UC TO R m 1 ;, j 35E CORP D • 7=n707t 0001180 T B T - 2 7 ' / r-: 2oo3A PNP Epitaxial Planar Silicon Transistors General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

A13134

Abstract: A13133 A1312
Contextual Info: Ordering number : ENN6471 Monolithic Linear IC LA8519M I/O Switch/Voice Signal-Processing IC for Cordless Telephones Overview Features The LA8519M is a cordless telephone base unit IC that provides I/O switching, voice signal processing, and other functions. It integrates, on a single chip, crosspoint switch,

2SA60B

Abstract: A13134 A13135 58rf vox switch 2SA608NP LA8519M 7d 220k 41ti
Contextual Info: Ordering number : ENN6471 Monolithic Linear IC LA8519M I/O Switch/Voice Signal-Processing IC for Cordless Telephones Overview Features The LA8519M is a cordless telephone base unit IC that provides I/O switching, voice signal processing, and other functions. It integrates, on a single chip, crosspoint switch,

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle