2SA77 Search Results

2SA771

Abstract: 2SA770 2SA7 2SC1985
Contextual Info: Inchange Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING

2SC1986

Abstract: 2SC1985
Contextual Info: Inchange Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING

2SA775

Contextual Info: Inchange Semiconductor Product Specification 2SA775 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage APPLICATIONS ·For TV vertical output amplifier applicatons PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA771

Abstract: 2SA770
Contextual Info: JMnic Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1985/1986 ・Low collector saturation voltage APPLICATIONS ・For general and industrial purpose applications PINNING PIN DESCRIPTION

25X2

Abstract: 2SA770 2SA771 w506
Contextual Info: AOK AOK Semiconductor Product Specification 2SA770 2SA771 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complément to type 2SC1985/1986 • Low collector saturation voltage APPLICATIONS - /♦*. i * F o r g e n e ra l and in d u stria l

2SC1986

Abstract: 2SC1985
Contextual Info: SavantIC Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING

2SC1986

Abstract: 2SA771
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA771 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= -80(V)(Min.) ·Complement to Type 2SC1986 APPLICATIONS ·Designed for audio and general purpose applications.

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2sa1015

Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
Contextual Info: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK

Contextual Info: ^zml-Conductoi iPioaucti, Una., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA775 Silicon PNP Power Transistor PIN l.BASE DESCRIPTION • Collector-Emitter Breakdown Voltage :V(BR)CEO=-100V(Min)

2SA778

Abstract: 2SA778A
Contextual Info: HITACHI 2SA778 k , 2SA778A(g> SILICON PNP EPITAXIAL HIGH VOLTAGE MEDIUM SPEED SWITCHING I, Emitter Î. Collector 3. Buse (Dimensions in mm) (JE D E C TO-92) I ABSO LU T E MAXIMUM RATINGS (Ta-25aC) Item Symbol 2SA 778 MAXIMUM COLLECTOR DISSIPATION CURVE 2SA 778A®

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA770 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)cEo= -60(V)(Min.) PIN 1. BASE • Complement to Type 2SC1985

2SA777

Abstract: 2SC15-0 2SA0777 2SC1509
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High collector-emitter voltage (Base open) VCEO

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1

2n4889

Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2SC1509

Abstract: 1271a TRANSISTOR 2sc1509 2SA777 2SA77 transistor 2sA777
Contextual Info: Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA777 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SA778

Abstract: 2SA778AK 2SA778A Hitachi DSA00335
Contextual Info: 2SA778 K , 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA778(K), 2SA778A(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA778(K) 2SA778A(K) Unit Collector to base voltage

2SA777

Abstract: transistor 2sA777 2SA777 equivalent 2SC1509
Contextual Info: Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2S0187

Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
Contextual Info: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®

2SC1509

Abstract: 2SC15-0 2SA0777 2SA777
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 (2SA777) Unit: mm 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2

CTX12S

Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

2SA770

Abstract: 2SC1985
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA770 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= -60(V)(Min.) ·Complement to Type 2SC1985 APPLICATIONS ·Designed for audio and general purpose applications.