2SA82 Search Results

2SA821S

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA821S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage

2SA821

Abstract: 2SA805 2SA806 2SA832 2sa805a toyo 10KO 2SA802 2SA820
Contextual Info: £• tt A I P N P = J = * » » y u » - QUALITY RELIABILITY v Î j ï W Æ J T Ï h ^ V : Ï Physical Dimension (Ta=25°C) ! mm) (Absolute Maximum Ratings) is -§■ 3Ê -180 V CBO 2SA802, 2SA832 -130 2SA806, 2SA821 -210 V -130 -30 T stg 125 °C -5 5-1 2 5

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA821S TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

datasheet of ic 555

Abstract: IC 555 2SA821
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR PNP TO—92 FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range

2SA821

Contextual Info: 2SA821 -0.03A , -210 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   High Breakdown Voltage Low Transition Frequency G A 2SA821-P 2SA821-Q 82~180

2SA821S

Contextual Info: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA821S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V

2SA821

Contextual Info: 2SA821 h ~ 7 > y X $ / T ransistors 9 Q A A 9 1 i t f ^ + v 7 ^ u - t ^ P N P '>>;=]> h 7 > v ' x $ • ¡g ^ J E fllJ i^ iiiW H ig h Voltage Amp. Epitaxial Planar PNP Silicon Transistor • • ^ U fix liilS I/D im e n s io n s U n it: mm ¥ i& 1) V c e r = — 2 1 0 V i : ¡ ^ ¡ B E E T ¿ 6 -So

2Sa821s

Contextual Info: 2SA821S Transistors High-voltage Amplifier Transistor −210V, −30mA 2SA821S zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. SPT 2.0 (15Min.) 3Min. 3.0 4.0 0.45 2.5 0.5 0.45 5.0 (1) (2) (3)

2Sa825

Abstract: 2SA82
Contextual Info: h>-7 > y Z $ / T ransistors 2SA825 9 C A Q O » w Ä Ü ä R C O O 2SA825/2SA825S Epitaxial Planar P N P Silicon Transistors — ÄS' M i l i f f U f f l /General Small Signal Amp. • ü - J f ^ ä E l/ D im e n s io n s U nit : mm Ü Ä lE E T '& ä o

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA821 TRANSISTOR PNP 1. EMITTER FEATURES z High Breakdown Voltage z Low Transition Frequency 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: ROHM CO LT] 40E •. 7 8 2 6 ^ » 000S3fi5 I RHM 3 2SA821 h 7 > y X ^ /'Transistors '7 ^ 2 7 - 0 ^ 7° ~ ^ P N P V U =l > h 7 > V X ^ /High Voltage Amp. Epitaxial Planar PNP Silicon Transistor 2SA821 • ftJF i\l'> £ l|/'D im en sio n s U n it: mm) • « ft

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA821S ＴＯ－９２Ｓ TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD : 0.25W（Tamb=25℃） Collector current ICM: -0.03A Collector-base voltage

2SA821

Contextual Info: 2SA821S 2SC1651S Transistors I High-voltage Amplifier Transistor —210V, —30mA 2SA821S •F e a tu re s •A b s o lu te maximum ratings (T a = 2 5 1C ) -2 1 0 V ) ) H igh breakdow n voltage. (V c e r= * 2 ) C om plem ents the 2S C 1651 S. 1 •P a c ka g in g specifications and hra

2SD2422

Abstract: BC807-25T116 2SB1043 2sd2422 Datasheet DTA123JSATP 2SD2574 MMST8598T146 2SD1960 2sc5072 2SA1886
Contextual Info: Transistors Maintenance Product List 638 Transistors FMaintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2

2SA821

Contextual Info: 2SA821 h *7 > V ^ £ / T ransistors 2SA821 Epitaxial xk0^^'> 77;u:70u""^PNP Planar PNP Silicon Transistor ¡lE iÎJ ± ÎiJ Œ ^ ^ ffl/H ig h Voltage Amp. • 1 ^ t> i0 / D im e n s io n s U n it : mm) & & o V cer= - 2 1 0 V V • F e a tu re s I 1) High b reakd o w n voltag:

2SA825

Abstract: 2SA825S
Contextual Info: ROHM CO LTD • 4 0 E 7ä2öciclt:l 00QS3ÔÔ « T M R H M » 2SA825/2SA825S h 7 > v X £ / T ransistors - T -2 7 -Ö PN P y >; □ > h 7 > V X £ 2 3 Ü I 1 2 5 X t°^ ^ y r ;U7° u 2 S A 8 2 3 S ^ ^ ^ / - n e r a l Small Signal Amp. Epitaxial Planar P N P Silicon Transistors

2SA821S

Abstract: 2SC1651S
Contextual Info: Transistors 2SA821S 2SC1651S 94L-183-A35 (94L-519-C35) 274 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SA821S

Contextual Info: 2SA821S 2SA821S TO-92S TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2SA821

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210

2SC1651S

Contextual Info: 2SC1651S Transistors High-voltage Amplifier Transistor 210V, 30mA 2SC1651S zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, (VCER = 210V ) 2) Complements the 2SA821S. SPT 2.0 (15Min.) 3Min. 3.0 4.0 0.45 2.5 0.5 0.45 5.0 (1) (2) (3) (1)Emitter

2SA821

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range

2SC1651S

Abstract: 2SA821S 2SC1651 94L-183-A35
Contextual Info: Transistors 2SA821S 2SC1651S 94L-183-A35 (94L-519-C35) 274

2Sa825

Contextual Info: h 7 > y ^ ^ / T ransistors 2SA825 2SA825S 2SA825/2SA825S i k ° $ * y 7 J l ' 7 ° l ' - i - B P N P '> U = i> h 7 > y ^ ^ /General Small Signal Amp. Epitaxial Planar PNP Silicon Transistors • ^ J f i \ _ü @ / ' D i i n e n s i o n s U n i t : m m )