2SA96 Search Results

2sa965

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SC2238

Abstract: 2SC2238 2SA968 2SC2238A 2SC2238B 2SA968
Contextual Info: JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION ・With TO-220 package ・Complement to type 2SA968 ・High breakdown votage APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

2SC2209

Abstract: 2SA963
Contextual Info: •Power Transistors 2SC2209 2SC2209 Silicon NPN Epitaxial Planar Type A F Power Amplifier Complementary Pair with 2SA963 ■ Features Package Dimensions Uni t ! mm - • Large collector pow er dissipation Pc « 5W output in com plem entary pair with 2SA963

c2236 transistor

Abstract: transistor C2236 C2236 NPN Transistor C2236 c2236 transistor equivalent C2236 Y 2SC2236 2SA966
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Toshiba transistor C2235

Abstract: c2235 transistor C2235 Transistor C2235 2SA965 2SC2235
Contextual Info: 2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications • Unit: mm Complementary to 2SA965. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

2SC2235

Abstract: C2235 2SA965 c2235 Y
Contextual Info: 2SC2235 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2235 ○ 電力増幅用 ○ 励振段増幅用 • 単位: mm 2SA965 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定

A966

Abstract: a966 y 2SA966 A966 PNP A-966 2SC2236 2SA966 Y
Contextual Info: 2SA966 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA966 ○ 低周波電力増幅用 • 単位: mm 2SC2236 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

2SC2239

Abstract: 2SA969
Contextual Info: SavantIC Semiconductor Product Specification 2SC2239 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SA969 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING See Fig.2

2SC2236

Abstract: transistor 2sC2236 2SA966
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC2235

Abstract: transistor 2sC2235 2SA965
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2235 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Complementary to 2SA965 2. COLLECTER 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) B Symbol VCBO B

transistor a965

Abstract: a965 a965 transistor 2SA965 2sc2235 datasheet a965 y Toshiba transistor a965 2SC2235
Contextual Info: 2SA965 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA965 Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SC2235. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Transistor C2235

Abstract: c2235 transistor c2235 2SC2235 Toshiba transistor C2235 C2235 NPN Transistor transistor 2sC2235 c2235 Y MA80240 2SA965
Contextual Info: 2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications • Unit: mm Complementary to 2SA965. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SC2209

Abstract: 2SA963
Contextual Info: Power T ransistors 2SC2209 2SC2209 Silicon NPN Epitaxial Planar Type Package Dimensions A F Power Amplifier Complementary Pair with 2SA963 Uni t ! mm • Features • L arge collector pow er dissipation Pc • 5W o utp ut in com plem entary pair w ith 2SA963

2SA968Y

Contextual Info: 2SA968Y Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2236 TO-92L TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA966

Abstract: 2SC2236
Contextual Info: TOSHIBA 2SC2236 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2236 Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS. 15.1 M AX. • Complementary to 2SA966 and 3 Watts Output Applications. 0.75M A X 1.0M AX. 0.8M A X . M A X IM U M RATINGS (Ta = 25°C)

2sa968

Abstract: 2SC2238 2SA968 2sa968a PNP 2SA968 2sc2238 2sa968 data sheet 2SA968B 2SA968 Y
Contextual Info: Inchange Semiconductor Product Specification 2SA968 2SA968A 2SA968B Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2238 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

2SA966

Abstract: 2SC2236
Contextual Info: TOSHIBA 2SA966 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUD IO PO W ER A M PLIFIER APPLICATIONS 5.1 MAX. • Complementary to 2SC2236 and 3 W Output Applications. M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO

2SA965

Abstract: 2SC2235
Contextual Info: TO SH IBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 MAX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

toshiba 2sa965 audio power amplifier

Abstract: toshiba audio power amplifier 2SA965 2SC2235 transistor 2sC2235 0058669
Contextual Info: TO SH IBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS 5.1 MAX. DRIVER STAGE AMPLIFIER APPLICATIONS • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Transistor C2235

Abstract: c2235 c2235 transistor Toshiba transistor C2235 c2235 Y 2SC2235 2SA965 C2235 NPN Transistor 25j1A
Contextual Info: 2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications • Unit: mm Complementary to 2SA965. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

2SC2236

Abstract: 2SA966 2sc2236 transistor transistor 2SA966
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC2235 NPN SILICON TRANSISTOR AU DI O POWER AM PLI FI ER APPLI CAT I ON S DRI V ER ST AGE AM PLI FI ER APPLI CAT I ON S ̈ FEAT U RES * Complimentary to UTC 2SA965 Lead-free: 2SC2235L Halogen-free: 2SC2235G ̈ ORDERI N G I N FORM AT I ON