2SB10 Search Results

2SD1411

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)

Contextual Info: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A

2SB1015

Abstract: IC 4025
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406

Contextual Info: 2SB1020 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. I Q 3 MAX. 7.0 FEA TU R ES: . High DC Current Gain: hpE=2000(Min.) (at V c e =-3V, Ic =-3A

2SB1016

Abstract: 1C13MAX
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency

2SB1086A

Abstract: 2SD1563A
Contextual Info: Inchange Semiconductor Product Specification 2SB1086A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563A ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency

2SB1073

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1073 Features Low collector-emitter saturation voltage VCE sat Large peak collector current ICP Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

2SD1414

Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 2SB1024
Contextual Info: Inchange Semiconductor Product Specification 2SD1414 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications

2SB1015

Abstract: 2sB1015 y 2SD1406
Contextual Info: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier

2SB1052

Abstract: 2SD1480 IC 4090
Contextual Info: Inchange Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1480 ・Low collector saturation voltage APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION

2SD1376

Abstract: Darlington NPN Silicon Diode npn 100v 1.5a 2SB1012
Contextual Info: Inchange Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION

2SB1034

Abstract: 2sB103
Contextual Info: JMnic Product Specification 2SB1034 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・DARLINGTON APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter

2SB1086

Abstract: 2SD1563
Contextual Info: JMnic Product Specification 2SB1086 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563 ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications

2SB1055

Abstract: 2SD1486
Contextual Info: JMnic Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications

2SB1094

Abstract: 2SD1585
Contextual Info: JMnic Product Specification 2SB1094 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1585 APPLICATIONS ・Ideal for power supplies or variety or in audio and other equipment PINNING PIN DESCRIPTION 1 Emitter 2

2SB1018

Abstract: 2SD1411
Contextual Info: JMnic Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications ・High current switching applications

2SB1020

Abstract: 2SD1415
Contextual Info: JMnic Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications

2SB1071

Abstract: 2SB1071A 2SD1539 2SD1539A
Contextual Info: Power Transistors 2SD1539, 2SD1539A 2SD1539, 2SD1539A Silicon NPN Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SB1071, 2SB1071A • Features • Low collector-em itter saturation voltage VcEisao • High speed switching

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A
Contextual Info: Rower T ransistors 2SB1Q70, 2SB1070A 2SB1070, 2SB1070A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SD 1538, 2SD 1538A Unit : mm 6.7m«x. • Features • t o w collector-eimitter saturation voltage • High speed switching

2SB1052

Abstract: 2SD1480 8MA11
Contextual Info: Power T ransistòrs 2SB1052 2SB 1052 Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1480 • Features . • High DC c u rre n t gain I i f e and good linearity • Low collector-eim itter saturation voltage (VcEcsao)

2SB1096

Abstract: 2SD1587
Contextual Info: Inchange Semiconductor Product Specification 2SB1096 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Complement to type 2SD1587 APPLICATIONS ・For TV vertical output applications PINNING PIN DESCRIPTION

2sb1018

Abstract: 2SD1411 2sB101
Contextual Info: Inchange Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications

2sd1417

Abstract: 2SB1022 2sB102
Contextual Info: Inchange Semiconductor Product Specification 2SD1417 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1022 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications

2SD1505

Abstract: 2SB1064
Contextual Info: Inchange Semiconductor Product Specification 2SD1505 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications