2SB1073 Search Results

2SB1073

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1073 Features Low collector-emitter saturation voltage VCE sat Large peak collector current ICP Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

Contextual Info: Product specification 2SB1073 Features Low collector-emitter saturation voltage VCE sat Large peak collector current ICP Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

2SB1073

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1073 TRANSISTOR PNP FEATURES z Low collector-emitter saturation voltage VCE(sat) z Large peak collector current IC MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1073

Contextual Info: Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 4.5±0.1 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 3° ● Low collector to emitter saturation voltage VCE sat . Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • 2SB1073 Silicon PNP epitaxial planer Transistors Low collector to emitter saturation voltage VCE sat

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1073 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Large peak collector current IC 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: Transistor 2SB1073 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 3° ● Low collector to emitter saturation voltage VCE sat . Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment

2SB1073G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1073G Silicon PNP epitaxial planar type For low-frequency amplification • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large peak collector current ICP

Contextual Info: MCC 2SB1073
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • Low collector to emitter saturation voltage VCE sat Large peak collector current ICP

Contextual Info: MCC TM Micro Commercial Components 2SB1073-Q 2SB1073-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Low collector to emitter saturation voltage VCE sat Large peak collector current ICP

2SB1073

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1073 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1073 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SB1073 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE sat • Large peak collector current ICP • Mini Power type package, allowing downsizing of the equipment

Contextual Info: WILLAS FM120-M+ 2SB1073 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR

2SB1073

Contextual Info: Transistors 2SB1073 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE sat • Large peak collector current ICP • Mini Power type package, allowing downsizing of the equipment

Contextual Info: MCC TM Micro Commercial Components Features • • • • • • 2SB1073-Q 2SB1073-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Silicon PNP epitaxial planer Transistors Low collector to emitter saturation voltage VCE sat

2SB1073G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1073G Silicon PNP epitaxial planar type For low-frequency amplification • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter Th an W is k y Th e a pro ou

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1073 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 1 3 2 0.5±0.08 1.5±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1073

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1073 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 1.5±0.1 Collector-base voltage (Emitter open)

Contextual Info: MCC TM Micro Commercial Components Features • • • • • • • 2SB1073-Q 2SB1073-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Silicon PNP epitaxial planer Transistors Low collector to emitter saturation voltage VCE sat

2SB107

Contextual Info: MCC TM Micro Commercial Components 2SB1073
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Low collector to emitter saturation voltage VCE sat Large peak collector current ICP

2SB1073Q

Contextual Info: MCC TM Micro Commercial Components 2SB1073-Q 2SB1073-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Low collector to emitter saturation voltage VCE sat Large peak collector current ICP

2SB1099

Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Contextual Info: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103

2SB1073

Contextual Info: Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment