2SB107 Search Results

2SB1073

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1073 Features Low collector-emitter saturation voltage VCE sat Large peak collector current ICP Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

2SB1071

Abstract: 2SB1071A 2SD1539 2SD1539A
Contextual Info: Power Transistors 2SD1539, 2SD1539A 2SD1539, 2SD1539A Silicon NPN Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SB1071, 2SB1071A • Features • Low collector-em itter saturation voltage VcEisao • High speed switching

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A
Contextual Info: Rower T ransistors 2SB1Q70, 2SB1070A 2SB1070, 2SB1070A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair with 2SD 1538, 2SD 1538A Unit : mm 6.7m«x. • Features • t o w collector-eimitter saturation voltage • High speed switching

2SB1075

Contextual Info: Inchange Semiconductor Product Specification 2SB1075 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・High collector-peak current ・Low collector saturation voltage APPLICATIONS ・For audio frequency output amplifier applications PINNING

Contextual Info: Product specification 2SB1073 Features Low collector-emitter saturation voltage VCE sat Large peak collector current ICP Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

2SD1559

Abstract: 2SB1079 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1559 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB1079 ·DARLINGTON APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2

2SB1073

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1073 TRANSISTOR PNP FEATURES z Low collector-emitter saturation voltage VCE(sat) z Large peak collector current IC MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1073

Contextual Info: Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 4.5±0.1 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 3° ● Low collector to emitter saturation voltage VCE sat . Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • 2SB1073 Silicon PNP epitaxial planer Transistors Low collector to emitter saturation voltage VCE sat

2SB1077

Abstract: 2SD1558
Contextual Info: HITACHI 2SB1077 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 leld l I Base 2, CoHwtof flange 3. E m in a(D im ensions in m m) (JEDEC TO-220AB) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol MAXIMUM COLLECTOR DISSIPATION

2SB1072

Abstract: 2SB1072S 2SD1520
Contextual Info: HITACHI 2SB1072 ,2SB1072 f SILICON PNP TRIPLE DIFFUSED MEDIUM SPEED POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD 1520 /© © Type © Type 2.< 1. Base 2. C ollector 3. E m itter 4. C ollector (D im ensions in m m ) (DPAK) M AXIMUM COLLECTOR DISSIPATION

Hitachi DSA002787

Contextual Info: 2SB1079 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1559 Outline TO-3P 2 1 1. Base 2. Collector Flange 3. Emitter 1 2 1 kΩ (Typ) 400 Ω (Typ) 3 3 2SB1079 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Hitachi DSA002787

Contextual Info: 2SB1072 L , 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector ID 3 kΩ (Typ) 0.4 kΩ (Typ) 3 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA00276

Contextual Info: 2SD1559 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1079 Outline TO-3P 2 1 1. Base 2. Collector Flange 3. Emitter 1 2 3 kΩ (Typ) 400 Ω (Typ) 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

Contextual Info: Power Transistors 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071A 5.5±0.2 4.2±0.2 2.7±0.2 14.0±0.5 • Absolute Maximum Ratings TC = 25°C φ 3.1±0.1 Rating Unit Collector-base voltage Emitter open VCBO

Contextual Info: Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 3.4±0.3 8.5±0.2 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features Low collector to emitter saturation voltage VCE sat

Contextual Info: Transistor 2SB1073 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 3° ● Low collector to emitter saturation voltage VCE sat . Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment

Contextual Info: Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 1.0±0.1 Unit VCBO −40 V 2SB1070 −20 VCEO Emitter-base voltage Collector open VEBO −5 V IC −4 A ICP −8 A PC 25 W Tj 150 °C Tstg −55 to +150

Contextual Info: Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071 and 2SB1071A Unit: mm 0.7±0.1 10.0±0.2 4.2±0.2 5.5±0.2 2.7±0.2 • Absolute Maximum Ratings Symbol Collector to 2SD1539 base voltage

Contextual Info: Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching 2.7±0.2 16.7±0.3 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE sat • High-speed switching • Full-pack package which can be installed to the heat sink with one screw

2SB1073G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1073G Silicon PNP epitaxial planar type For low-frequency amplification • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large peak collector current ICP

2SB1079

Abstract: 2SD1559
Contextual Info: HITACHI 2SB1079 SILIC O N P N P T R IP L E D IFFU SED LO W F R E Q U E N C Y P O W E R A M P LIFIE R C O M P LE M E N T A R Y PA IR W ITH 2SD1559 £ tît U l&Oreux / Ifa u * ''j i t. Base 2. Collector (Flange 3. Emitter (Dimensions in nun) 4 J01 02 M OJ is

2SB1070

Abstract: 2SB1070A 2SD1538 2SD1538A
Contextual Info: Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 1.1max. 2.0 1.5max. 10.5min. ● 1.0±0.1 1.5±0.1 10.0±0.3 Low collector to emitter saturation voltage VCE sat High-speed switching

2SB1079

Abstract: 2SD1559 Hitachi DSA00396
Contextual Info: 2SD1559 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1079 Outline TO-3P 2 1 1. Base 2. Collector Flange 3. Emitter 1 2 3 kΩ (Typ) 400 Ω (Typ) 3 3 2SD1559 Absolute Maximum Ratings (Ta = 25°C) Item Symbol