2SB1151 Y Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  FEATURES *High Power Dissipation *Complementary to 2SD1691  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151G-x-AA3-R 2SB1151L-x-T60-K

2SB1151 y

Abstract: 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 *Pb-free plating product number: 2SB1151L „ ORDERING INFORMATION Ordering Number Normal

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 1 TO-220F1 TO-220  FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-126 TO-126C 1  ORDERING INFORMATION Ordering Number Lead Free Plating

2SD1691L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  1 1 TO-220F1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-252 TO-251 1 1 TO-126  ORDERING INFORMATION Ordering Number

2SD1691

Abstract: transistor 2sd1691 2SB1151 2SD1691L 2SD*1691
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-126 1 TO-126C *Pb-free plating product number:2SD1691L ORDERING INFORMATION

2SB1151L-T60-T

Abstract: 2SB1151 2SB1151L 2SB1151-T60-T 2SD1691 1K TRANSISTOR
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation : PD=1.5W Ta=25℃ *Complementary to 2SD1691. 1 TO - 126 *Pb-free plating product number: 2SB1151L PIN CONFIGURATION

2SB1151

Abstract: 2SD1691
Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

2SB1151 y

Abstract: 2SB1151-L(AZ)
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R

2SB1151

Abstract: 2SD1691 2SB1151 y XT60 2sb15
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-T 2SB1151G-x-AA3-T

Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

2SD1691

Abstract: 2SB1151
Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

2SD1691

Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C „ ORDERING INFORMATION Ordering Number Lead Free Plating

2SD1617

Abstract: 2sb111 2SB1116 2SB1116A 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124
Contextual Info: - 76 - Ta=25^,*03{ÎTc=25t ít S Veso Vc e o (V) (V) IC(DC) (A) Pc* (W) (W) 2SB11Í5A a n L F PA -80 2SB1116 BU LF PA/ MS S W -60 - 50 -1 2SB1116A s LF PA/ MS SW - 80 -60 -1 2SB1U7 BM LF PA/ MS SW -30 -25 -3 1 2SB1U8 H # L F PA -20 -15 -0. 7 0. 5 n -60

transistor 2SB618

Abstract: 3A/fllnm 80
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

2SB616 NEC

Abstract: B0952 SOT3323 6u60 2N3185 B0952F
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 20 25 30 35 40 50 60 70 80 200 200 140 140 200 200 400 400 200 200 2SA1469S 2SA1259 B0223 SML3705 SML3728 SML3777 SML3323 SML3327 2N3177 2N3181 2N3185 2N3189 2N3193 2N3197 SOT3723 SOT3723 SOT3723 SOT3731

IH02

Abstract: ts 4141 TRANSISTOR 2SB1151 2SD1691 T460
Contextual Info: s<*7— S ilico n P o w e r T ra n s isto r 2SD1691 N P N ifc NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Medium Speed Switching Industrial Use #£/FEA TU RES ftWm / P A C K A G E DIMENSIONS O V E iiiL 'ff <, L t > ' Unit : mm i n ; V c ; K ( s a i ) ' t ’' i _ ,

2SD2232

Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Contextual Info: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor 2sd1691

Abstract: 2SD1691 2SB1151
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

UB2012X

Abstract: UTC SOT223 MARKING 15-V 2SB1151 UB2012 SOP8 PNP Transistor Package 8.4v battery charger
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UB2012 Preliminary LINEAR INTEGRATED CIRCUIT ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER „ DESCRIPTION UTC UB2012 is designed for portable electronics with lower cost. Its advantages of high-accuracy voltage/current regulation, charging status

UB2012X

Abstract: UB2012C UB2012B UB2012 transistor marking code TS2
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UB2012 Preliminary LINEAR INTEGRATED CIRCUIT ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER „ DESCRIPTION UTC UB2012 is designed for portable electronics with lower cost. Its advantages of high-accuracy voltage/current regulation, charging status

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UB2012 LINEAR INTEGRATED CIRCUIT ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER  DESCRIPTION UTC UB2012 is designed for portable electronics with lower cost. Its advantages of high-accuracy voltage/current regulation, charging status

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UB2012 Preliminary LINEAR INTEGRATED CIRCUIT ADV AN CED LI N EAR CH ARGE M AN AGEM EN T I C FOR SI N GLE AN D T WO-CELL LI T H I U M -I ON AN D LI T H I U M -POLY M ER ̈ DESCRI PT I ON UTC UB2012 is designed for portable electronics with lower cost. Its