2SB1182 Search Results

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

4337

Abstract: 161e 2SB1182
Contextual Info: SPICE PARAMETER 2SB1182 by ROHM TR Div. * 2SB1182 PNP BJT model * Date: 2006/11/24 .MODEL 2SB1182 PNP + IS=600.00E-15 + BF=207.37 + VAF=16.367 + IKF=5.4337 + ISE=600.00E-15 + NE=1.3729 + BR=102.31 + VAR=100 + IKR=92.045E-3 + ISC=97.084E-12 + NC=1.4840 + NK=.7623

b1182

Abstract: b11822 B 1182
Contextual Info: ROHM CO LTD 4DE » E3 7 f l S û tm 0ÜDSSb3 / T ransistors 2SB1182/2SB1182F5 - 2SE81182 2SB1182P lt ° $ ^ V 7 ^ 7 'b - t iP N P Epitaxial Planar PNP Silicon Transistors - 32V , vfjiH/Dimensions Unit :mm

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 „ TO-252 DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „

2SB1182

Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1182 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

Contextual Info: Product specification 2SB1182 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2

Contextual Info: 2SB1182-P MCC TM Micro Commercial Components 2SB1182-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-R Features x x • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage

2SB1182

Contextual Info: 2SB1182 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage

2SB1182

Contextual Info: h -y > v 7k$ /Transistors 2SB1182 2SB1182 xt"^ ^ y 7 ^ 7 °U -t^ P N P y 'Jn > Epitaxial Planar P N P Silicon Transistor féJÌ}/£1t:ft*llI Ìffl/Lo w Freq. Power Amp. • <$£ • rt'jiE I/'D im e n s io n s Unit : mm 1) V c e O = - 32V, lc = - 2 A , PC = 10W

Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1

2SB1240

Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5

2SB1182R

Abstract: 2SB1182Q 2SB1182-Q
Contextual Info: 2SB1182-P MCC TM Micro Commercial Components Features x x • • 2SB1182-Q
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-R PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage

2SB1182

Abstract: 2SB1240 2SD1758 2SD1862
Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 2SB1182 Plastic-Encapsulate Transistors TRANSISTOR PNP TO-252 FEATURES Power Dissipation 1.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit VCBO Collector- Base Voltage

2SB1182F5

Abstract: 2SB1182
Contextual Info: h 7 > y ^ ^ /Transistors 2SB1182 2SB1182F5 2SB1182/2SB1182F5 x t ° ^ ^ ' > 7 ^ 7 ° U - ^ - ^ P N P h 7 > y ' 7 $ 1 £ ijj5 S ^ jiilllffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors • 1 ) V Ce o = - 32V , v U = i > \ Ü È @ / D im e n s io n s Unit : mm)

2sb1240

Abstract: 2sb118 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.  FEATURES

2SB1182

Contextual Info: 2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER 1 3 2 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage

2SB1182

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SB1182 TO-251 TO-252-2 TRANSISTOR PNP FEATURES Power dissipation 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2.COLLECTOR Symbol Parameter Value

2SB1188

Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05

2SC5119

Abstract: 2SD2170 2SD1834 2SB1516 2SD2153 2SA1900 2SB1132 2SB1181 2SB1182 2SB1184
Contextual Info: mmm MPT • CPT F5 • PSD Application MPT CPT F5 Circuit 82—390 P Q R -3 -1 0 0 - 2SA1900 - - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 —390 P Q R -3 -5 0 0 - - -8 0 - 0 .7

2SB1240

Abstract: 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: Medium power transistor 32V, 2A 2SB1188 / 2SB1182 / 2SB1240 Dimensions (Unit : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 +0.1 0.4−0.05 0.4±0.1 1.5±0.1 1.5 0.65±0.1 0.75 2.3+0.2 −0.1 0.5±0.1 2.5 (2) C0.5 9.5±0.5 6.5±0.2 5.1+0.2

Contextual Info: RONfTI MPT • CPT F5 • PSD Application MPT CPT FS -3 2 -1 - 2* - 8 2 -3 9 0 POR -3 -1 0 0 - -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - _ 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 -3 9 0 P Q R -3 -5 0 0 - - -8 0 -0 .7 - 2*

2SB1182GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1182GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. DPAK DPAK .050 (1.27) .030 (0.77) * PC= 1.5 W (mounted on ceramic substrate).