2SB1198 Search Results

Contextual Info: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR  DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ)

Contextual Info: 2SB1198K h 7 > y ^ $ / T ransistors 2SB 1198K Epitaxial Planar PNP Silicon Transistor <fi£Ji}J&^2J*8llifll/L o w Freq. Power Amp. • fcft i'W i vtiim/Dimensions Unit : mm 1) = ! U - 7 ^ t S i P VCE (sa t)= -0 .2 V (Typ.) (lc /lB = - 0 .5 A /- 5 0 m A )

Contextual Info: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dim ensions (Unit:s mm) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) (I c / I b = 2) 2.9±0.2 1 1 + 0 -2 11- 0 1 1.0±O.2_ - 0 .5 A /- 5 0 m A ) . ± 0.1 08 0.950.95

2SB1198K

Abstract: 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor
Contextual Info: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1

Contextual Info: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dimensions (Unit:s mm) LOW VcE(sat). 2.9+0.2 VcE(sat) = —0.2V (Typ.) (Ic / I b +0-2 L—i 1 11 1.9+0.2 = - 0 .5 A /-5 0 m A ) 0 .8 ± 0.1 □ 2) High breakdown voltage.

Contextual Info: Product specification 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

2SB1198K

Contextual Info: 2SB1198K PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A L S 2 FEATURES 3 Top View Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 B 1 D G Power dissipation : 0.2

Contextual Info: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K •External dimensions (Unit:s mm) • F e a tu re s 1) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) ( I c / I b = -0.5A /-50m A ) 2) High breakdown voltage. B V ceo = — 8 0 V 3) Complements the 2SD1782K.

npn 222

Abstract: high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
Contextual Info: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

2SD1782K ROHM

Contextual Info: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

Contextual Info: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)

Contextual Info: Transistors SMD Type PNP Transistors 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

sot akr

Contextual Info: 2SB1198K SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 2.92 0.35 1.17 Features — — — 2.80 1.60 Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.15 1.90 Dimensions in inches and (millimeters)

50256

Abstract: 2SB1198K MJE50
Contextual Info: SPICE PARAMETER 2SB1198K by ROHM TR Div. * 2SB1198K PNP BJT model * Date: 2006/12/15 .MODEL 2SB1198K PNP + IS=270.00E-15 + BF=202.53 + VAF=25 + IKF=4.9986 + ISE=270.00E-15 + NE=1.5975 + BR=6.4472 + VAR=100 + IKR=.718 + ISC=8.7772E-12 + NC=1.5323 + NK=1.2944

2SB1198K

Abstract: 2SD1782K 2SD1782K ROHM
Contextual Info: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type

Contextual Info: Transistors AEC-Q101 Qualified Low-frequency Transistor *80V, *0.5A 2SB1198KFRA 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 2SD1782KFRA 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm)

2SB1198

Abstract: sot akr
Contextual Info: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)

bvceo

Abstract: 231 transistor 2SB1198K 2SD1782K
Contextual Info: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type

Contextual Info: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1

transistor equivalent book 2SD1782K

Abstract: 2SB1198K 2SD1782K
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1198K TRANSISTOR PNP FEATURES Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) z High breakdown voltage BVCEO=-80V z Complements the 2SD1782K 1. BASE

akr sot-23

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR „ 3 DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 SOT-23 „ FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ)

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.