2SB1218 Search Results

2SB1218

Abstract: 2SB1218 equivalent smd BQ BS-B
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB1218 Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -45 V Collector-emitter voltage

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1

2SB1218G

Abstract: 2SD1819G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD1819G • Features ue pl d in an c se ed lud pl vi an m m es

2SB1218A

Abstract: 2SD1819A
Contextual Info: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and

2SB1218AW

Abstract: 2SD1819A marking BQ 4
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High forward current transfer ratio hFE z Excellent HFE Linearity. z Complements the 2SD1819A. 2SB1218AW Pb Lead-free APPLICATIONS z For general purpose amplification.

2SB1218G

Abstract: 2SD1819G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819G • Features ■ Package • High forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and

2SD1819G

Abstract: 2SB1218G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218G • Features ■ Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SB1218A TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation 150 PCM: 1.25±0.05 1.01 REF 3. COLLECTOR mW (Tamb=25℃) 0.30 1.30±0.03 Collector current

2SB1218A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SB1218A TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR 150 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1

2SB1218A

Abstract: 2SD1819A
Contextual Info: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and

2SB1218A

Abstract: 2SB1218AR 2SB1218A-R 2SD1819A 2SB1218A-Q
Contextual Info: 2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free APPLICATIONS  SOT-323 General Purpose Amplification A FEATURES   L 3 3 High DC Current Gain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 0.2±0.1 2 di p Pl lan nclu ea e

2SB1218A

Abstract: 2SD1819A
Contextual Info: Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • High forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and

2SB1218A

Abstract: 2sb1218
Contextual Info: 2SB1218A 2SB1218A SOT-323 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR 150 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current ICM: -100 mA Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range

2SB1218G

Abstract: 2SD1819G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819G • Package • High forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and

2SB1218G

Abstract: 2SD1819G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1218G • Features ue pl d in an c se ed lud pl vi an m m es

ZR 720

Abstract: D 400 transistor 2SB1218A 2SD1819A
Contextual Info: 2SD1819A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES z z A High foward current transfer ratio hFE. L Low collector to emitter saturation voltage VCE sat . 3 z Complementary to 2SB1218A B S Top View

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SB1218A TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05