2SB1260 Search Results

Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89

2SB1260-P

Contextual Info: MCC TM Micro Commercial Components 2SB1260-P 2SB1260-Q 2SB1260-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SB1260

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1260 SOT-89 TRANSISTOR PNP FEATURES Power dissipation 0.5 PCM: Collector current -1 ICM: Collector-base voltage -80 V(BR)CBO: 1. BASE W (Tamb=25℃) 2. COLLECTOR

Contextual Info: MCC TM Micro Commercial Components 2SB1260-P 2SB1260-Q 2SB1260-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

2SB1181

Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated

ScansU9X27

Contextual Info: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)

Contextual Info: UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL

SOD123 ZL marking

Contextual Info: WILLAS FM120-M+ 2SB1260 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR PNP

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type

2SB1260

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.

2SB1181

Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100
Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1898L-x-AB3-R

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898

Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 9.5±0.5 0.9 0.4+0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 1.5 0.9 5.5+0.3 −0.1 4.0 ±0.3 2.5+0.2 −0.1 (3)

Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated

transistor b54

Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
Contextual Info: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)

2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
Contextual Info: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118

2SB1260Q

Contextual Info: MCC TM Micro Commercial Components 2SB1260 2SB1260-P 2SB1260-Q 2SB1260-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181

Contextual Info: MCC TM Micro Commercial Components 2SB1260-P 2SB1260-Q 2SB1260-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

MARKING SMD PNP TRANSISTOR R

Abstract: MARKING SMD TRANSISTOR P SMD TRANSISTOR MARKING BE BE MARKING bvceo MARKING SMD PNP TRANSISTOR 2SB1260
Contextual Info: Transistors SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE sat . Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

Contextual Info: MCC TM Micro Commercial Components 2SB1260-P 2SB1260-Q 2SB1260-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates