2SB128 Search Results

2SB1282

Abstract: ITO-220 TP4J10 transistor TC-10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1282 Case : ITO-220 TP4J10 Unit : mm 4A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SB1288

Contextual Info: Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features ■ Absolute Maximum Ratings 0.7±0.1 0.7±0.2 ● Low collector to emitter saturation voltage VCE sat .

equivalent transistor A1015

Abstract: A1015 equivalent
Contextual Info: 2SB1284 TP10J10 PN P y— PNP Darlington Transistor Outline Dimensions 4.6 ±0.2 Equivalent Circuit 2.7±0-2 oC 0,7*02 BO- Unit I mm Case : ITO-220 M /W -M /W -• ~5kfl » 1 .5 k n iE Absolute Max. Ratings m a Ite m , • ts r n Sy m b o l V.-■ ■ & ! & f t

2SB1288

Contextual Info: Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Features ● ● Low collector to emitter saturation voltage VCE sat . Large collector current IC.

2SB1288

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf

2sB1283

Abstract: ITO-220 TP7J10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1283 Case : ITO-220 TP7J10 Unit : mm A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: K 7 > y ^ $ //Transistors 2SB1289 2SB1289 PNP y V =J > b 7 > V 7s $ X tf £ * V T7^ 7 ° U - Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor V iV v JlT • ^ J fi^ ü E l/D im e n s io n s Unit: mm • « ft 1) VcE(sat) f> 3 .6 ± 0 .2 10. 0 ± 0 . 3

2SB1286

Abstract: T2-96
Contextual Info: b y > y X £ /Transistors 2SB1286 + # - V PNP v U = l > > h > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Darlington Transistor • • ^-Jfi^ü IS I/D im ensio n s Unit: mm 1 ) 9 — ') > 2 ) ? > 3) a: h / ’? -^ 4) i - j u - ? hFE < * o - K rt« E 0 • I S -y

2SB1283

Abstract: ITO-220 TP7J10 transistor bb2
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1283 Case : ITO-220 TP7J10 Unit : mm - 7 A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: ROHM CO LTD •4DE 7 ô 2 f l cH cl D DGGSSTB T •RH M 2SB1286 h "7 > y X $ / I ransistors - 7 ^ 3 3 - 3 1 2SB12. pnp Epitaxial Planar PNP Silicon Darlington Transistor # —U> h hFE t f ’r a t ' o 2 K rtM o

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features 13.5±0.5 0.7±0.2

2SB1282

Abstract: ITO-220 TP4J10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1282 Case : ITO-220 TP4J10 Unit : mm ± 4A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SB1284

Abstract: ITO-220 TP10J10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1284 Case : ITO-220 TP10J10 Unit : mm - 1 0 A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: h "7 > v 7, $ /Transistors 2SB1287 2SB1287 Epitaxial Planar PNP Silicon Transistor Darlington l a i j J H ^ i S l i f f l / L o w Freq. Power Amp. ? - ' J > 1) h FE 2) K|*)J£0 7 0 ‘ o * ¿3 1+0. 1 ] 2 a * o" • Features o 1) Darlington connection provides high

2SB1288

Abstract: 072s
Contextual Info: Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Features ● ● Low collector to emitter saturation voltage VCE sat . Large collector current IC.

2SD2398

Abstract: 2SB1287 2SB1316 2SB1567 2SB1580 2SD1765 2SD1867 2SD1980 2SD2195 96-227-D85
Contextual Info: Transistors 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 96-139-B85 (96-227-D85) 287

2SB1288

Contextual Info: Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features 13.5±0.5 0.7±0.2 0.7±0.1 • Low collector-emitter saturation voltage VCE sat

Contextual Info: 2SB1285 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.5k h(FE) Max. Current gain.

2SB1286

Abstract: 2SD1646
Contextual Info: SavantIC Semiconductor Product Specification 2SB1286 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD1646 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier and power driver applications

2SB1289

Abstract: 2SD1580 L-C-50
Contextual Info: ROHM CO LTD 4DE D B 7628^=1 0 0 Q 5 5 C17 7 O RHP1 h 7 > '> '7 £ /Transistors ' 2SB1289 T-l3 -J ? X t f 2 * y T7^ 7° U - ^ Jg PN P y 1J □ > K 7 > y 7, $ 1 5 Jl}J& 1 i:friiilffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor v ." A 'v in r

TRANSISTOR D 1765

Abstract: TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 12SB1316 DIODE B1316 transistor 1765
Contextual Info: 2SB1580 12SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s 1 2 3 4 ) ) ) ) •A b s o lu te maximum ratings (Ta~25"C } D arlington connection fo r high D C current gain.

Contextual Info: Darlington Transistors Darlington Power Transistors Three Terminal Type "i ectrica Characteristics V be ft ton VcE 6 jc Absolute Maximum Ratings Type No. 2SB1282 2SB1283 2SB1284 2SD1793 2SD1026 2SD1789 2SD1023 2SD1792 2SD1025 2SD1794 2SD1027 2SD2196 2SD1795

T15J10

Contextual Info: 2SB1285 T15J10 PNP4f—lJ > h > h 7 > v X # / P N P Darlington Transistor Outline Dimensions Equivalent Circuit C ase : M T 0 -3 P Absolute Max. Ratings • m ■■ ■./•' Item \ ,ie 5t ■S y m b o l s S to r a g e T e m p e r a tu r e J u n c ti o n T e m p e r a tu r e