2SB1463 Search Results
2SB1463 Price and Stock
Panasonic Electronic Components 2SB1463GRLTRANS PNP 150V 0.05A SSMINI3-F3 |
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2SB1463GRL | Reel |
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Panasonic Electronic Components 2SB1463JRLTRANS PNP 150V 0.05A SSMINI3-F1 |
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2SB1463JRL | Reel |
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2SB1463 Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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2SB1463 |
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Silicon PNP epitaxial planer type | Original | 49.04KB | 3 | |||
2SB1463 |
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Silicon PNP epitaxial planer type | Original | 35.94KB | 2 | |||
2SB1463 |
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Silicon PNP Transistor | Original | 46.18KB | 3 | |||
2SB1463 | Unknown | The Transistor Manual (Japanese) 1993 | Scan | 88.87KB | 2 | |||
2SB1463 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 122.52KB | 1 | |||
2SB1463 | Unknown | Japanese Transistor Cross References (2S) | Scan | 34.8KB | 1 | |||
2SB1463GRL |
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150VCEO 50MA SSMINI-3 | Original | 4 | ||||
2SB1463IT |
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Silicon PNP Epitaxial Planar Type Transistor | Original | 76.07KB | 3 | |||
2SB1463J |
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Transistor for high breakdown voltage low-noise amplification. Complementary to 2SC2440J | Original | 84.61KB | 3 | |||
2SB1463JRL |
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150VCEO 50MA SSMINI-3 | Original | 3 |
2SB1463 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SB1463J
Abstract: SC-89
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Original |
2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01 |
Original |
2002/95/EC) 2SD2240J 2SB1463J | |
D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
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OCR Scan |
125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 | |
2SB1463J
Abstract: 2SD2240J SC-89
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Original |
2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 | |
2sc2440Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO |
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2002/95/EC) 2SB1463G 2SC2440G 2sc2440 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ue pl d in an c |
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2002/95/EC) 2SB1463G 2SC2440G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01 |
Original |
2002/95/EC) 2SD2240J 2SB1463J | |
D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
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OCR Scan |
2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A | |
Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 0.4 5˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO |
Original |
2SB1463 2SD2240 SC-75 | |
2SB1463J
Abstract: SC-89
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Original |
2SB1463J 2SC2440J 2SB1463J SC-89 | |
2SB1463
Abstract: 2SD2240
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Original |
2SB1463 2SD2240 2SB1463 2SD2240 | |
2SB1463J
Abstract: 2SD2240J SC-89
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Original |
2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 | |
2SB1463
Abstract: 2SD2240
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Original |
2SB1463 2SD2240 2SB1463 2SD2240 | |
2SB1463
Abstract: 2SD2240 SC-75 SJC00089BED
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Original |
2SB1463 2SD2240 2SB1463 2SD2240 SC-75 SJC00089BED | |
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2SB1463J
Abstract: 2SD2240J SC-89
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Original |
2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01 |
Original |
2002/95/EC) 2SB1463J 2SC2440J | |
2SB1463J
Abstract: 2SD2240J SC-89
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Original |
2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 | |
2SB1463
Abstract: 2SD2240
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Original |
2SB1463 2SD2240 2SB1463 2SD2240 | |
SC-75
Abstract: 2SB1463 2SD2240
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Original |
2SB1463 2SD2240 SC-75 2SB1463 2SD2240 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO |
Original |
2002/95/EC) 2SB1463G 2SC2440G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ■ Package • High collector-emitter voltage (Base open) VCEO |
Original |
2002/95/EC) 2SB1463G 2SC2440G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO |
Original |
2002/95/EC) 2SB1463G 2SC2440G | |
2SB1463
Abstract: 2SD2240 SC-75 SSMini3-G1
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Original |
2SB1463 2SD2240 SC-75 2SB1463 2SD2240 SC-75 SSMini3-G1 | |
2SB1463J
Abstract: SC-89
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Original |
2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 |