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    2SB1463 Price and Stock

    Panasonic Electronic Components 2SB1463GRL

    TRANS PNP 150V 0.05A SSMINI3-F3
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    Panasonic Electronic Components 2SB1463JRL

    TRANS PNP 150V 0.05A SSMINI3-F1
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    2SB1463 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    2SB1463
    Panasonic Silicon PNP epitaxial planer type Original PDF 49.04KB 3
    2SB1463
    Panasonic Silicon PNP epitaxial planer type Original PDF 35.94KB 2
    2SB1463
    Panasonic Silicon PNP Transistor Original PDF 46.18KB 3
    2SB1463
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 88.87KB 2
    2SB1463
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 122.52KB 1
    2SB1463
    Unknown Japanese Transistor Cross References (2S) Scan PDF 34.8KB 1
    2SB1463GRL
    Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150VCEO 50MA SSMINI-3 Original PDF 4
    2SB1463IT
    Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF 76.07KB 3
    2SB1463J
    Panasonic Transistor for high breakdown voltage low-noise amplification. Complementary to 2SC2440J Original PDF 84.61KB 3
    2SB1463JRL
    Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150VCEO 50MA SSMINI-3 Original PDF 3

    2SB1463 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1463J

    Abstract: SC-89
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification


    Original
    2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original
    2002/95/EC) 2SD2240J 2SB1463J PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan
    125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 PDF

    2SB1463J

    Abstract: 2SD2240J SC-89
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J


    Original
    2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 PDF

    2sc2440

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO


    Original
    2002/95/EC) 2SB1463G 2SC2440G 2sc2440 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ue pl d in an c


    Original
    2002/95/EC) 2SB1463G 2SC2440G PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original
    2002/95/EC) 2SD2240J 2SB1463J PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan
    2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 0.4 5˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO


    Original
    2SB1463 2SD2240 SC-75 PDF

    2SB1463J

    Abstract: SC-89
    Contextual Info: Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C


    Original
    2SB1463J 2SC2440J 2SB1463J SC-89 PDF

    2SB1463

    Abstract: 2SD2240
    Contextual Info: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 1.6±0.15 • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage


    Original
    2SB1463 2SD2240 2SB1463 2SD2240 PDF

    2SB1463J

    Abstract: 2SD2240J SC-89
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original
    2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 PDF

    2SB1463

    Abstract: 2SD2240
    Contextual Info: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 1.6±0.15 • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage


    Original
    2SB1463 2SD2240 2SB1463 2SD2240 PDF

    2SB1463

    Abstract: 2SD2240 SC-75 SJC00089BED
    Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High collector-emitter voltage (Base open) VCEO


    Original
    2SB1463 2SD2240 2SB1463 2SD2240 SC-75 SJC00089BED PDF

    2SB1463J

    Abstract: 2SD2240J SC-89
    Contextual Info: Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C


    Original
    2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01


    Original
    2002/95/EC) 2SB1463J 2SC2440J PDF

    2SB1463J

    Abstract: 2SD2240J SC-89
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J


    Original
    2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 PDF

    2SB1463

    Abstract: 2SD2240
    Contextual Info: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 0.2+0.1 –0.05 3 Symbol Ratings Unit VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage


    Original
    2SB1463 2SD2240 2SB1463 2SD2240 PDF

    SC-75

    Abstract: 2SB1463 2SD2240
    Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 • High collector-emitter voltage Base open VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and


    Original
    2SB1463 2SD2240 SC-75 2SB1463 2SD2240 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO


    Original
    2002/95/EC) 2SB1463G 2SC2440G PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ■ Package • High collector-emitter voltage (Base open) VCEO


    Original
    2002/95/EC) 2SB1463G 2SC2440G PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO


    Original
    2002/95/EC) 2SB1463G 2SC2440G PDF

    2SB1463

    Abstract: 2SD2240 SC-75 SSMini3-G1
    Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current


    Original
    2SB1463 2SD2240 SC-75 2SB1463 2SD2240 SC-75 SSMini3-G1 PDF

    2SB1463J

    Abstract: SC-89
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification


    Original
    2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 PDF