2SB1481 Search Results

D2241

Abstract: TRANSISTOR D2241 2SD2241 2SB1481
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics

TRANSISTOR D2241

Abstract: D2241
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics

D2241

Abstract: TRANSISTOR D2241 2SB1481 2SD2241
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)

B1481

Abstract: 2SB1481 2SD2241
Contextual Info: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

B1481

Abstract: 2SB1481 2SD2241 2SB148
Contextual Info: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

2SB1481

Abstract: 2SD2241
Contextual Info: SavantIC Semiconductor Product Specification 2SB1481 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications

2SD2241

Abstract: 2SB1481 rl10c
Contextual Info: SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain : hFE=2000 Min ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications

2SB1481

Abstract: 2SD2241
Contextual Info: TO SH IBA 2SB1481 TOSHIBA TRANSISTOR 2 S B 1 481 SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE Unit in mm High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , In = -1 .5 A ) Low Saturation Voltage : V £E (sat)“ — (Max.) (I0 = —3A)

2SB1481

Abstract: 2SD2241 T32001
Contextual Info: TO SH IBA 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , In = -1 .5 A ) Low Saturation Voltage : V £E (sat)“ — (Max.) (I0 = —3A)

B14-81

Contextual Info: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

D2241

Abstract: TRANSISTOR D2241
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)

Contextual Info: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 14 81 SWITCHING APPLICATIONS U nit in mm High DC Current Gain : hFE = 2000 Min. (VCe = - 2 V , IC = - 1 .5 A ) • T.r»w S n tn r n fin n Vnltacri* * W't-n - • Complementary to 2SD2241

2SD2241

Abstract: 2SB1481 S5 3000
Contextual Info: TOSHIBA 2SD2241 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 Unit in mm SW ITCHING APPLICATIONS • High DC Current Gain • r : hp^ —2000 Min. <v> o Low Saturation Voltage : V q £ (sat) = l-5V (Max.) cn CO O Complementary to 2SB1481 1.1 1.1

2SB1481

Contextual Info: IziieuiJ ^£.mi-(2onductoi ^-Pioducti, Una. Ls TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1481 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)cEo=-100V(Min)

Contextual Info: T O S H IB A 2SD2241 2SD2241 TO SHIBA TRANSISTOR SW ITCHING APPLICATIONS • • • SILICON NPN EPITAXIAL TYPE Unit in mm ^ 3.2 ± 0.2 1 0 1 0.3 High DC Current Gain : hpg = 2000 Min. Low Saturation Voltage : V q e = l-5V (Max.) Complementary to 2SB1481

B1481

Abstract: 2SB1481 2SD2241 100-C3000
Contextual Info: 2SB1481 東芝トランジスタ シリコンPNPエピタキシャル形 2SB1481 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 • 直流電流増幅率が高い。 : hFE 1 = 2000 (最小) •

Contextual Info: 2SB1481 SILICON PNP EPITAXIAL TYPE U nit in mm SW ITCHING APPLICATIONS 10 ±0.3 • • • High DC Current Gain : hFE = 2000 M m . (V cE = -2V , IC = -1 .5 A ) Low Saturation Voltage : VcE(sat) = — (Max.) (Ic = —3A) Complementary to 2SD2241 W - M A X I M U M RATI NGS (Ta = 2 5°C)

Darlington NPN Silicon Diode

Abstract: DARLINGTON 3A 100V npn 2SB1481 2SD2241
Contextual Info: Inchange Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain : hFE=2000 Min ・Low saturation voltage ・Complement to type 2SB1481 ・DARLINGTON APPLICATIONS ・With switching applications

2SB1481

Abstract: 2SD2241
Contextual Info: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -1.5A ) Low Saturation Voltage : Vq^ (sat)“ —1.5V (Max.) (I0 = —3A)

Contextual Info: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

Contextual Info: 2SD2241 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE Unit in mm SWITCHING APPLICATIONS • • • 10 +0.3 High DC Current Gain : hjrE = 2000 Min. Low Saturation Voltage : V q e (§at)= 1-5V (Max.) Complementary to 2SB1481 , $ 3.2 ± 0.2 2.7±02

A1241

Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
Contextual Info: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0

2SB1481

Abstract: 2SD2241 equivalent of 2sd2241
Contextual Info: TO SH IBA 2SD2241 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS U n it in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • H igh DC Current Gain : hpE = 2000 Min. • Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) C*) cn CO

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs