2SB154 Search Results

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C

2SB1548A

Abstract: 2SD2374 2SD2374A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2

2SB1548

Abstract: 2SB1548A 2SD2374 2SD2374A 2sb15
Contextual Info: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features Collector to base voltage 2SB1548

2sb1548

Abstract: 2SB1548A 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SB1548 base voltage 2SB1548A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1549

Contextual Info: b 7 > is / T ransistors 2SB1549 • 2SB1549 Ik ? * * y 7 J t f U - f # PNP y <; 3 > h7 > y M W - V ' s h > Epitaxial Planar PNP Silicon Transistor Darlington Freq. Power Amp. M ) • ^•Jfi'+jiEil/Dimensions (U n it: mm) ft« 1) ? - ' ) > h > } g ^ T 'h F E

2374A

Abstract: 2sb1548 2SB1548A
Contextual Info: Inchange Semiconductor Product Specification 2SB1548 2SB1548A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2374/2374A ・Low collector saturation voltage ・High forward current transfer ratio hFE which has satisfactory linearity

2374A

Abstract: 2sb1548 2SB1548A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1548 2SB1548A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity

2SB1548

Abstract: 2SB1548A 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage Collector to emitter voltage

2SD2374

Abstract: 2SB1548 2SB1548A 2SD2374A
Contextual Info: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage Collector to emitter voltage 2SD2374

2SD2374

Abstract: 2SD2374A
Contextual Info: SavantIC Semiconductor Product Specification 2SD2374 2SD2374A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1548/1548A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity

2sb1548

Abstract: 2SB1548A 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base

2sb15

Contextual Info: 2SB154060ML 2SB154060ML 肖特基二极管芯片 描述 Ø 2SB154060ML是采用硅外延工艺制造的肖特基 二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；

transistor pnp 12V 1A Collector Current

Abstract: 2SB1548A 2SD2374A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1548A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max)@ (IC= -3A, IB= -0.375A)

power supply on ic 101

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SB154100MA 2SB154100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB154100MA is a schottky barrier diode chips Ø Lb fabricated in silicon epitaxial planar technology; La Ø Due to special schottky barrier structure, the chips have very low reverse leakage current typical

2SB1548A

Abstract: 2SD2374 2SD2374A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SB154040ML 2SB154040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB154040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø

2sb1548

Abstract: 2SB1548A 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base

Contextual Info: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base

2SB1548

Abstract: 2SB1548A 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 Collector to base voltage 2SD2374 Collector to

2SB1548A

Abstract: 2SD2374A
Contextual Info: Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

2SB1548

Abstract: 2SD2374
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1548 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max)@ (IC= -3A, IB= -0.375A)