2SB1548A Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C

2SB1548A

Abstract: 2SD2374 2SD2374A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2

2SB1548

Abstract: 2SB1548A 2SD2374 2SD2374A 2sb15
Contextual Info: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features Collector to base voltage 2SB1548

2sb1548

Abstract: 2SB1548A 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SB1548 base voltage 2SB1548A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2374A

Abstract: 2sb1548 2SB1548A
Contextual Info: Inchange Semiconductor Product Specification 2SB1548 2SB1548A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2374/2374A ・Low collector saturation voltage ・High forward current transfer ratio hFE which has satisfactory linearity

2374A

Abstract: 2sb1548 2SB1548A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1548 2SB1548A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity

2SB1548

Abstract: 2SB1548A 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage Collector to emitter voltage

2SD2374

Abstract: 2SB1548 2SB1548A 2SD2374A
Contextual Info: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage Collector to emitter voltage 2SD2374

2sb1548

Abstract: 2SB1548A 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base

2SB1548A

Abstract: 2SD2374A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 • Absolute Maximum Ratings Ta = 25°C

transistor pnp 12V 1A Collector Current

Abstract: 2SB1548A 2SD2374A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1548A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max)@ (IC= -3A, IB= -0.375A)

power supply on ic 101

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C

2SB1548A

Abstract: 2SD2374 2SD2374A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base

2SB1548

Abstract: 2SB1548A 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 Collector to base voltage 2SD2374 Collector to

2SB1548A

Abstract: 2SD2374A
Contextual Info: Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

2374A

Abstract: 2sb1548 2SB1548A
Contextual Info: JMnic Product Specification 2SB1548 2SB1548A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2374/2374A ・Low collector saturation voltage ・High forward current transfer ratio hFE which has satisfactory linearity

Contextual Info: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 • Absolute Maximum Ratings TC = 25°C Collector to base voltage

2SB1548A

Abstract: 2SD2374A 2SD237 2sb15
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SD2374

Abstract: 2SB1548 2SB1548A 2SD2374A DSA003373
Contextual Info: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548 and 2SB1548A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2374 base voltage 2SD2374A

2SB1548A

Abstract: 2SD2374 2SD2374A
Contextual Info: Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the