2SB157 Search Results

2sd2401

Abstract: 2SB1570 MT200 package
Contextual Info: Product Specification www.jmnic.com 2SD2401 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SB1570 ・DARLINGTON APPLICATIONS ・Audio, Series Regulator and General Purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: Product specification 2SB1572 Features Low VCE sat : VCE(sat) -0.4 V Complementary to 2SD2403 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage

2SB1574

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1574 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features • Code U-G2 • Pin Name 1: Base

2Sd2401

Abstract: rl10c 2SB1570
Contextual Info: SavantIC Semiconductor Product Specification 2SD2401 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SB1570 ·DARLINGTON APPLICATIONS ·Audio, series regulator and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

ic nec 2501

Abstract: NEC 2501 2SB1571 2SD2402
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402 4.5±0.1 1.6±0.2 C E 0.42 ±0.06 1.5 B 0.47 ±0.06 3.0 4.0±0.25

tlu 011

Abstract: 2SB1571
Contextual Info: T — — b ' > U 3 > h 7 > V X $ S ilic o n T r a n s is to r 2SB1571 PNPX V =J > fé J S ïÆ 2 S B 1 5 7 1 4' i f f f iif c it 'Î i, 6 ^ ü T *5 U h -7 > v * $ * i t J , D C / D C * t ì : mm 1 .5 ± # 0 .1 3 & — o z i U ? ^ f ê Ÿ D ^ Œ A ^ Ê t 'o

2SB1570

Abstract: 2SD2401
Contextual Info: 7 0 Ω E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO 2SB1570 Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1574 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features • Code U-G2 • Pin Name 1: Base

2SB1574

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1574 Silicon PNP epitaxial planar type For low-frequency output amplification • Package ■ Features • Code U-G2 • Pin Name 1: Base 2: Collector 3: Emitter Th an W is k y

Contextual Info: Product specification 2SB1571 Features Low VCE sat : VCE(sat) -0.35 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current (DC)

2SB1574

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1574 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Possible to tsolder radiation fin directly to printed circuit boad. 0.127 max Large collector current IC.

3Fp transistor

Abstract: 2SB1578 2SD2425 TC-7898 gb3 ic
Contextual Info: ?— S7,5 /— S '> • ; = ] > =7 > i > h t . 9 2SB1578 S i l i c o n P N P t : 9 X 2 S B 1 5 78 ' 3 > T r a n s is t o r b W Ì : mm) i ^ i f c W L T i J 9.DC/DC 5 .7 ± 0.1 n 1.5 ± 0.1 .2.0 + 0.2, o' H L t t ' ' or7 - & < n 41P< l!W & fî^ -y ^ - ^ M ^ ' h h „

2SB1570

Abstract: 2SD2401 DSA0016506
Contextual Info: 7 0 Ω E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO Ratings Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat)

2SB1574

Abstract: 231q
Contextual Info: Power Transistors 2SB1574 Tentative Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency output amplification 2.3±0.1 ● ● 1.0±0.1 0.1±0.05 0.8max 0.93±0.1 2.3±0.1 4.6±0.1 1 (TC=25˚C) Symbol Ratings Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1574 Silicon PNP epitaxial planar type For low-frequency output amplification • Package ■ Features • Possible to tsolder radiation fin directly to printed circuit boad

smd transistor HX

Abstract: smd transistor HY smd marking HY marking HX smd transistor HX 45 2SB1572 2SD2403 HY IC 2SD24 hy smd marking
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar 2SB1572 Features Low VCE sat : VCE(sat) -0.4 V Complementary to 2SD2403 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -60

nec 2501

Abstract: ic nec 2501 2SB1572 2SD2403
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1572 PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403 4.5±0.1 1.6±0.2 C E 0.42 ±0.06 1.5 B 0.47 ±0.06 3.0 2.5±0.1

Contextual Info: Product specification 2SB1574 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Possible to tsolder radiation fin directly to printed circuit boad. 0.127 max Large collector current IC. +0.1 0.60-0.1 2.3

transistor gb2

Abstract: gb1 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1578 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1578 features high current capacity in small dimension PACKAGE DRAWING UNIT: mm and is ideal for DC/DC converters and mortor drivers.

smd transistor HX

Abstract: smd marking hY smd transistor HY marking HX transistor smd marking HY transistor marking hy low sat smd transistor MARKING HY 2SB1571 smd HY
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar 2SB1571 Features Low VCE sat : VCE(sat) -0.35 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage

D1120

Abstract: 2SB1572 2SD2403 HY 1602 ft-03
Contextual Info: T *— $ • y — h NEC V U = | Si l i con Tr a n s i s t o r 2SB1572 P N P X £ 2SB15 7 2 4 ' A'* e»-kWiït'&M. z U =i > h 7 > y X ^ m z & v , DC/DC m e : mm • K 7 < / < * if C » É 'P 1 'o 4.5±0.1 if# 1.6 ± 0.2 « o W S o =i 1.5±0.1 I ^ ii'o 3 -_

2SB1545

Abstract: 2SB1536 2SB1531 2SB1532 2SB1535 2SB1541 2SB1542 2SB1543 2SB1544 2SB157
Contextual Info: - 94 - 13=25*0, *EJ]fàTc=25‘C m 2S81530 2SB1531 2SB1532 2SB1535 2SB1536 2SB1541 2SB1542 2SB1543 2SB1544 2SB1545 2SB1578 £ ft B ÍL «TF «Æ» □ — fôT s m ffl £ A LF PA PA LF LF LF LF PA LF LF LF PA PA A A A A A PA/MS SW & VcBO VCEO (V) (V) -200

ic 731

Abstract: ic shelf life 2SB1574
Contextual Info: Power Transistors 2SB1574 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.8 max. 2 1 • Absolute Maximum Ratings TC = 25°C 3 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1 2.3±0.1 Symbol Rating Unit

2SD2401

Abstract: 2SB1570
Contextual Info: C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1570 2SD2401 Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC=30mA 150min IC 12 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA