2SB159 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2SD2449

Abstract: 2-21F1A 2SB1594 2sb15
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment

2-21F1A

Abstract: 2SB1594 2SD2449
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2449 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 160 V (Min.) Complementary to 2SB1594 M A X IM U M RATINGS (Ta = 25°C)

2SB1599

Abstract: 2SD2457
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open)

2SB1592

Abstract: 2sb15
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1592 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 8.0±0.2 • Features ue pl d in an c

2SB1593

Contextual Info: Power Transistors 2SB1593 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE sat • Allowing automatic insertion with radial taping 0.85±0.1 1.0±0.1 0.8 C • Absolute Maximum Ratings Ta = 25°C

2SB1599

Abstract: 2SA699 2SA699A 2SD2457 2SA699 H
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SB1599G

Abstract: 2SD2457G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro

ic 4510

Contextual Info: TO SH IB A TOSHIBA TRANSISTOR 2SB1594 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2 S B 1 594 Unit in mm .3 + 0.2 20.5M A X • High Breakdown Voltage : V £E O = —160V (Min.) • Complementary to 2SD2449 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SB1590K Transistors Power Transistor -15V, -1A 2SB1590K zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K. SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2)

Contextual Info: 2SD2444K Transistors Power Transistor 15V, 1A 2SD2444K zFeatures 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) (1)

2sb1590

Abstract: 2SB1590K 2SD2444K T146
Contextual Info: 2SB1590K Transistors Power Transistor -15V, -1A 2SB1590K zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K. SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2)

2SB1599

Abstract: 2SD2457
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Rating Unit VCBO −50 V Collector-emitter voltage (Base open)

2SB1592

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1592 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 8.0±0.2 • Features ue pl d in an c

2SB1599

Abstract: 2SD2457
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te

Contextual Info: 2SD2444K Transistors Power Transistor 15V, 1A 2SD2444K Features 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. External dimensions (Unit : mm) SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) (1) 0.3Min.

2SB1599

Abstract: 2SD2457
Contextual Info: Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE sat • Mini Power type package, allowing downsizing of the equipment

D218

Abstract: 2SB1590K 2SD2444K B218
Contextual Info: Transistors 2SB1590K 2SD2444K 96-150-B218 (96-247-D218) 293

2SB1599G

Abstract: 2SD2457G 2sb15
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For power amplification Complementary to 2SD2457G ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

2SB1593

Abstract: 2sb15
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1593 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2SA699

Abstract: 2SA699A 2SB1599 2SD2457 2SA699 H
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Contextual Info: 2SB1594 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1594 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2449 Absolute Maximum Ratings (Tc = 25°C) Characteristics

2-21F1A

Abstract: 2SB1594 2SD2449
Contextual Info: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) · Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics Symbol