2SB172 Search Results

2SB172 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB172	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	36.65KB	1
2SB172	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.2KB	1
2SB172	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	46.04KB	1
2SB172	Unknown	Cross Reference Datasheet	Scan	PDF	35.81KB	1
2SB172	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	145.41KB	1
2SB172	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	89.31KB	1
2SB172	Unknown	Vintage Transistor Datasheets	Scan	PDF	48.29KB	1
2SB172	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	92.87KB	1
2SB172	Unknown	GE PNP ALLOY JUNCTION	Scan	PDF	40.77KB	1
2SB172	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	106.88KB	2
2SB172	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	36.48KB	1
2SB1722J	Panasonic	Transistor for high breakdown voltage low-frequency amplification	Original	PDF	78.25KB	3
2SB1722J0L	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 100VCEO 20MA SSMINI-3	Original	PDF		3
2SB1724	Panasonic	Power Device - Power Transistors - General-Purpose power amplification	Original	PDF	54.88KB	2

2SB1724A	Panasonic	Power Device - Power Transistors - General-Purpose power amplification	Original	PDF	54.88KB	2

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Panasonic Electronic Components 2SB1722J0L TRANS PNP 100V 0.02A SSMINI3-F1
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2SB172 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sd2693 Contextual Info: Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage	Original	2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2SD2693A 60ndant	PDF
2sd2693 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features	Original	2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2SD2693A	PDF
2sd2693 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features	Original	2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2SD2693A	PDF
2sd2693 Abstract: 2SD2693A 2SB1724 2SB1724A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te	Original	2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2sd2693 2SD2693A 2SB1724 2SB1724A	PDF
2sd2693 Abstract: 2SD2693A 2SB1724 2SB1724A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features	Original	2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2sd2693 2SD2693A 2SB1724 2SB1724A	PDF
2SB1722J Abstract: SC-89 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.50)(0.50) 0 to 0.02	Original	2002/95/EC) 2SB1722J 2SB1722J SC-89	PDF
2SB1722J Abstract: SC-89 Contextual Info: Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 0.50 (0.50) 0 to 0.02 • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and	Original	2SB1722J 2SB1722J SC-89	PDF
2SB1722 Abstract: 2SB172 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-frequency amplification • Features ue pl d in an c se ed lud pl vi an m m es	Original	2002/95/EC) 2SB1722G 2SB1722 2SB172	PDF
2SB1724 Abstract: 2SB1724A 2SD2693 2SD2693A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/	Original	2002/95/EC) 2SB1724, 2SB1724A 2SD2693 2SD2693A 2SB1724 2SB1724A 2SD2693A	PDF
2sd2693 Abstract: 2SB1724A 2SB172 2SB1724 2SD2693A Contextual Info: Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Collector-base voltage 2SB1724 Emitter open 2SB1724A Collector-emitter voltage 2SB1724	Original	2SB1724, 2SB1724A 2SD2693 2SD2693A 2SB1724 2SB1724A 2SB172 2SB1724 2SD2693A	PDF
2SB1721 Abstract: 2SB1721-Z 2sb1721z 2SB172 100VCE Contextual Info: データ・シートシリコン・パワー・トランジスタ Silicon Power Transistors 2SB1721 PNP エピタキシアル形シリコン・トランジスタ高速度スイッチング用 2SB1721 は，IC の出力から直接ドライブできるシリコン・パワー・	Original	2SB1721 2SB1721 O-251MP-3 2SB1721-Z O-252MP-3Z O-251) 100VCE O-252) D16287JJ2V0DS00 2SB1721-Z 2sb1721z 2SB172 100VCE	PDF
2SB1722J Abstract: SC-89 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.375) 1.60±0.05	Original	2002/95/EC) 2SB1722J 2SB1722J SC-89	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.50)(0.50) 0 to 0.02	Original	2002/95/EC) 2SB1722J	PDF
2SD2693A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C	Original	2002/95/EC) 2SB1724, 2SB1724A 2SD2693 2SD2693A 2SD2693A	PDF

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722G Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification • Package • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and	Original	2002/95/EC) 2SB1722G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 1 (0.50)(0.50) 0 to 0.02	Original	2002/95/EC) 2SB1722J	PDF
2SB1722J Abstract: SC-89 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722J Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.375) 1.60±0.05	Original	2002/95/EC) 2SB1722J 2SB1722J SC-89	PDF
2sd2691 Abstract: 2SC2691 2SB1725 Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Power Transistors 2SD2691A Silicon NPN triple diffusion planar type For power ampliﬁcation Complementary to 2SB1725A 4.2±0.2 Unit: mm 10.0±0.2 1.0±0.2 2.5±0.1 13.0±0.2 90° • Features  Wide safe operation area	Original	2002/95/EC) 2SD2691A 2SB1725A 2sd2691 2SC2691 2SB1725	PDF
ic ta 7699 Abstract: 2SB176 2SB172 2SB177 TC 4863 GE PNP ALLOY JUNCTION Contextual Info: 2 SB17 2 , 2 SB1 76, 2SB177 2SB172, 2SB176, 2SB177 2SB177: PNP ^ /M A IN T E N A N C E PNP Alloy Junction Power Amplifier 4$ ^ /F e a tu r e s • B y^"C 0.4W "fo • 0. 4 W output in class B push-pull amplifier tk'k'M tfk /A b solu te Maximum Ratings (Ta=25°C)	OCR Scan	2SB172, 2SB176, 2SB177 2SBi77: 2SB172 2SB176 2SB172 ic ta 7699 2SB176 2SB177 TC 4863 GE PNP ALLOY JUNCTION	PDF
2SC2691 Abstract: 2sc2691a 2SD2691A 2sb1725 2sb172 2SK4072 2SK40 2sd26 2SD2691 Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Power Transistors 2SD2691A Silicon NPN triple diffusion planar type For power ampliﬁcation Complementary to 2SB1725A 4.2±0.2 Unit: mm 10.0±0.2 1.0±0.2 Symbol Rating Unit Collector-base voltage (Emitter open)	Original	2002/95/EC) 2SD2691A 2SB1725A 2SC2691 2sc2691a 2SD2691A 2sb1725 2sb172 2SK4072 2SK40 2sd26 2SD2691	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C	Original	2002/95/EC) 2SB1724, 2SB1724A 2SD2693 2SD2693A	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1722G Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO • SS-Mini type package, allowing downsizing of the equipment and	Original	2002/95/EC) 2SB1722G	PDF
2SD2693A Abstract: 2SB1724 2SB1724A 2SD2693 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1724, 2SB1724A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2693 and 2SD2693A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5	Original	2002/95/EC) 2SB1724, 2SB1724A 2SD2693 2SD2693A 2SD2693A 2SB1724 2SB1724A	PDF
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent	PDF

2SB172 Search Results

2SB172 Datasheets (15)

2SB172 Price and Stock

Panasonic Electronic Components 2SB1722J0L

2SB172 Datasheets Context Search

2sd2693

2sd2693

2sd2693

2sd2693

2sd2693

2SB1722J

2SB1722J

2SB1722

2SB1724

2sd2693

2SB1721

2SB1722J

2SD2693A

2SB1722J

2sd2691

ic ta 7699

2SC2691

2SD2693A

MIP2F3