2SB55 Search Results

2SB556

Abstract: 2SB555
Contextual Info: JMnic Product Specification 2SB555 2SB556 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD425/426 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage

2SD439

Abstract: 2SB559 transistor af 126 JIS G 3201
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D I 7 cH 7 G 7 b □ □ □ 3CIÛ2 S T - 3i-n 2SB559 PNP/ npn Epitaxial Planar Silicon Transistors 2009A Low Frequency Power Amp, Medium Speed Switching Applications 2SD439 372E Features . Large allowable collector dissipation and wide ASO.

2SD553

Abstract: 2SB553
Contextual Info: SavantIC Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications

2sb555

Abstract: 2SB556 2Sb556 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SB555 2SB556 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity

2SD425

Abstract: 2SD426 2SB555
Contextual Info: SavantIC Semiconductor Product Specification 2SD425 2SD426 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SB555/556 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity

2SB551

Contextual Info: SavantIC Semiconductor Product Specification 2SB551 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2

2SD424

Abstract: 2SB554
Contextual Info: SavantIC Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SB554 ·High power dissipation ·High collector-emitter breakdown voltage : VCEO=180V min APPLICATIONS ·Power amplifier applications

2SB552

Abstract: 2SD552
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB552 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·High Power Dissipation: PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD552 APPLICATIONS ·High power amplifier applications.

2SB555

Abstract: 2SD425 2SB556 2SB55 TRANSISTOR 2sb556 2SD426 AC73 3SB555 2SB5 2SB5560
Contextual Info: 2 s b 555 2 s b 556 1j □ > P N P = « s i b t - y h 5 SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o Power A m p lifie r u ? ? A p p lic a tio n s S ^ ; Pc=ioow C 2 S B 5 5 5 , 2 SB5 5 6 ES ÉffET -f ; V oEO =- 1 4 0 V 2SB555) VCE O = - 1 2 0 V ( 2 S B 5 5 6 )

2SD553

Abstract: Toshiba 2sd553
Contextual Info: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.

2SB553

Contextual Info: TO SH IBA 2SB553 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB553 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX, Low Collector Saturation Voltage : v CE(sat)= —0.4V (Max.) at 1C= -4 A

2SD424

Abstract: 2SB554 2Sb554 equivalent
Contextual Info: Inchange Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SB554 ・High power dissipation ・High collector-emitter breakdown voltage : VCEO=180V min APPLICATIONS ・Power amplifier applications

2SB552

Abstract: 2SD552
Contextual Info: JMnic Product Specification 2SB552 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD552 APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING see Fig.2 PIN DESCRIPTION

2SD424

Abstract: 2SB554
Contextual Info: 2SD424 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. fS 25.0 MAX. FEATURES : OZÌJM&X. S3 • High Power Dissipation : Pc=150W • High Breakdown Voltage : V c e O=180V + 0.09 0i.o~o.o3 • Complementary to 2SB554. • Recommended for 100W High Fiderity Audio

2SB554

Abstract: 2Sb554 equivalent 2Sd424
Contextual Info: Inchange Semiconductor Product Specification 2SB554 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD424 ・High power dissipation APPLICATIONS ・For use in power amplifier applications PINNING see Fig.2 PIN DESCRIPTION

2SB557

Abstract: 2SD427 PNP TO3 50W
Contextual Info: Inchange Semiconductor Product Specification 2SB557 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD427 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for 50W high-fidelity audio

2SB823

Contextual Info: •a u 3 Discontii Package Larger FP 2SB544|P2 Larger FP Larger 2SB559 L F Power Amp, Medium Speed Switching FP 2SBS60 FP 2SB598 FP Electronic Governor DC* DC Converter, 1W Sound Output 2SB633P L F Power Amp, 25 to 3SW Output 2SB634 L F Power Amp 2SB544 M P )

2SB558

Abstract: ic co6
Contextual Info: 2SB558 > S /U D > P N P = *S £ *fé h 5 > 5 > *5 > SILICON PNP TRIPLE DIFFUSED TRANSISTOR O U n it in mm • SSEftj tíf É ELECTRICAL CHARACTERISTICS C H A R A C T E R IS T IC MIN. TYP. MAX. r K M X ÏCBO VCB = ~ 50 v - XE = 0 - - -1 0 0 jUA » Bt M i* 1EBO

2SB550

Contextual Info: SavantIC Semiconductor Product Specification 2SB550 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING see Fig.2

2SB553

Abstract: 2SD553
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -4A ·Complement to Type 2SD553 APPLICATIONS ·High current switching applications. ·Power amplifier applications.

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SB553 Features • • PNP Silicon Power Transistors With TO-220 package Amplifier applications Maximum Ratings Symbol V CEO V CBO V EBO

2SD427

Abstract: 2SB557 Transistor 2SD427 PNP SILICON POWER TRANSISTORS
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB557 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High Power Dissipation: PC= 80W(Max)@TC=25℃ ·Complement to Type 2SD427 APPLICATIONS ·Designed for power amplifier applications.

2SB558

Abstract: 2Sd428 2sb558 datasheet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB558 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High Power Dissipation: PC= 60W(Max)@TC=25℃ ·Complement to Type 2SD428 APPLICATIONS ·Designed for power amplifier applications.

2SB557

Abstract: 2SD427 DATASHEET 2SB557 DATASHEET 2SD427 PNP TO3 50W
Contextual Info: SavantIC Semiconductor Product Specification 2SB557 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SD427 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 50W high-fidelity audio frequency amplifier output stage