2SB819 Search Results

2SD1051

Abstract: 2SB819
Contextual Info: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB819 Unit: mm 6.9±0.1 1.5 1.0 0.85 4.5±0.1 4.1±0.2 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

2sd1051

Abstract: 2SB0819 2SB819 japanese transistor manual
Contextual Info: Transistor 2SB0819 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.7 4.5±0.1 R 0.9 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 R 0.9 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC

Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open) VCEO −40 V VEBO −5 V Collector current

583 transistor

Abstract: 2sd1051 2SB0819 2SB819
Contextual Info: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 6.9±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 2.0±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current

2N4250 motorola

Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a

583 transistor

Contextual Info: Transistor 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 6.9±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 2.0±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)

japanese transistor manual

Abstract: 2sd1051 hFE is transistor to-220 2SB0819 2SB819
Contextual Info: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open)

2SA933S

Abstract: 2SB737 2SA1302 TOSHIBA 2sb1425 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175
Contextual Info: 27 - 55 € Type No. tt € Manuf. B SANYO TOSHIBA 2SA 1285 - H # 2SA1208 2SA1145 2SA 1285A H « 2SA1208 2SA1020 2 S A 1286 , H 2 S A 1287 J 2SA1770 * 2 S A 1288 2SA 1289 , 2 S A 1290 ✓ & T MATSUSHITA — A ROHM 2SA1124 2SA1282 2SA1124 2SB1212 2SB1068 2SB819

2SB0819

Abstract: 2SB819 2SD1051
Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit VCBO −50 V Collector-emitter voltage (Base open)

Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.7 4.5±0.1 R 0.9 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 6.9±0.1 1.5 * Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage

K020

Abstract: 2SB0819 2SB819 2SD1051
Contextual Info: Transistor 2SB0819 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 6.9±0.1 Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –40 V Emitter to base voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1028

Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin