2SB86 Search Results

2SB863

Abstract: 2SD1148
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL

2SD1148

Abstract: 2SB863 equivalent 2sb863 hfe1
Contextual Info: Inchange Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB863 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2SB867

Abstract: 2SD959
Contextual Info: Inchange Semiconductor Product Specification 2SD959 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SB867 ・Excellent linearity of hFE APPLICATIONS ・For power switching applications

2SB863

Abstract: 2sd1148
Contextual Info: SavantIC Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SD1148 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2SB869

Abstract: 2SD961
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB869 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -4A ·Complement to Type 2SD961

2SB867

Abstract: 2SD959
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB867 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -2A ·Complement to Type 2SD959

2SB861

Abstract: transistor 2sD1138 2sB861 transistor TV power transistor datasheet transistor2sb861 2SD1138 low power pnp SILICON PNP POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB861 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1138 APPLICATIONS ·Developed for low frequency power amplifier color TV

Contextual Info: MCC TM Micro Commercial Components Features • • • • •
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB861-B 2SB861-C Halogen free available upon request by adding suffix "-HF"

Contextual Info: 2SB861 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138 Outline T0-220AB 1 2 .3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25°C)

2sb861

Abstract: Hitachi DSA001650
Contextual Info: 2SB861 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138 Outline TO-220AB 1 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2SB863

Abstract: 2sb863 transistor 2SD1148 SC-65
Contextual Info: 2SD1148 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage

2SB869

Abstract: 2SD961
Contextual Info: 2SD961 2SD961 v ij 13 > N PN W 'tJZ .'i J : \ d l $ : * r ' > T J\s 7 “i s — j - j f c / S i NPN Epitaxial Planar / P o w e r Switching 2SB869 t □ V / ' J y Unit ! mm U /C o m p le m e n ta ry P a ir w ith 2SB869 10.5 + 0.5 • if ^ ¡¡/F e a tu re s

2SB867

Abstract: 2SD959
Contextual Info: 2SD959 2SD959 v ij z\ > NPN x tfT + '> 7 WtjX'f 2SB867 £ J \/~ 7 \s— i-M /S i NPN Epitaxial Planar Power Switching U/C om plem entary Pair with 2SB867 U nit ! mm 10.5 ± 0 .5 • # • E ^ /F e a t u r e s ^ U O lft 4.8max. 9.8max. 1.5max. 7.6min. i ; 7 ^ tS fn I± VcEfsaoA'ffit'c/LoW V CE sat)

2SD1137

Abstract: 2SB860
Contextual Info: HITACHI 2SD1137-SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER TV VERTICAL DEFLECTION OUTPUT COMPLEMENTARY PAIR WITH 2SB860 1. Base 2. C u ik v u ir Klange 3. E miner (Dimensions iji miti) (JEDEC TO-220 AB) MAXIMUM COLLECTOR DISSIPATION • ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SB897

Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Contextual Info: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te

t930

Abstract: 2SB862 T151 T760 AJT 300
Contextual Info: 2SB862 E P IT A X IA L PLANER TY PE GENERAL PURPOSE POWER AMPLIFIER -M m * I Outline Drawings 4 .5 *0.! L3 H 4 & S i Features • hFE^SSi' • S fiiS tt High D. C. current gain High reliability Applications • X ' f y T - y f i ' l r z . l ' —9 • D C -D C a ^ '* —?

2SB865

Abstract: 2SD1153 ITR08508 ITR08509 ITR08510
Contextual Info: Ordering number:ENN828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, motor drivers. unit:mm 2006B [2SB865/2SD1153] Features 6.0

2SD1138-SILICON

Abstract: 2SD1138
Contextual Info: HITACHI 2SD1138- — SILICON NPN T R IPLE DIFFUSED LOW F R E Q U E I^ Y HIGH VOLTAGE POW ER AMPLIFIER TV VERTICAL D EFLECTIO N OUTPUT COM PLEMENTARY PAIR WITH 2SB861 1. U>* 2. Collector ilangc i K m w cr tfJimcnskm» tn mm) (JE D EC TO-220 AB) • A B SO LU T E MAXIMUM RATINGS (Ta=25»C>

2SB861

Abstract: 2SD1138
Contextual Info: 2SB861 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138 Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

ET-191

Contextual Info: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*

n0828

Abstract: 2SB865 828d
Contextual Info: Ordering number: EN 8 2 8 D 2SB865/2SD1153 N0.828D PNP/ NPN Epitaxial Planar Silicon Darlington Transistors i Drivers Applications : 2SB865 Uses • Relay drivers, hammer drivers, lamp drivers, motor drivers Features • High DC current gain {4000 or more)

2sd1148

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm .1S9MAX. . 0 3 ,2 ±0.2 FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25uC &45±Q2 RATING

2SD1148

Abstract: 2SB863 audio amplifier 70w
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm 15.9MAX. . 0 3.2±qg FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC RATING

Contextual Info: 2SD1138 Silicon NPN Triple Diffused HITACHI Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline T O -2 2 0 A B IIT II 1 U 1 2 1. B a s e 2. C o lle c to r F la n g e 3. E m itte r 2SD1138