2SC1338 Search Results

Contextual Info: 2SC1338 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2SC1313

Abstract: 2SC1302 2sc1400 2SC1312 2SC1389 2SC1370 2SC1305 2SC1371 2SC1364 2SC1307
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) 2SC1301 250 5 30A 2SC1302 400 5 30A 2SC1303 40 4 300 2SC1304 300 5 500 Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SC 143 SANYO

Abstract: nec 2651 2SC2283 2sc2317 2SC2570A 2SC1730 2sc2644 2SC2389 2SC2101 2SC2627
Contextual Info: - m % tt € Manuf. Type No. & H. SANYO 2SC 2627 / ~ 2SC 2828 " 2SC 2629 *<-• » M. Q TOSHIBA NEC 2SC2101 2SC2281 2SC2102 2SC2282 i HITACHI Sä ± il FUJITSU fé T MATSUSHITA z m MITSUBISHI * 2SC2420 2SC 2630 ^ H m 2SC2782 2SC 263 1 ta T 2SC2909 2SC 2632