2SC14 Search Results

2SC1445

Abstract: 2SC144
Contextual Info: Inchange Semiconductor Product Specification 2SC1445 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING see Fig.2

2SA764

Abstract: 2SC1444
Contextual Info: JMnic Product Specification 2SA764 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Complement to type 2SC1444 APPLICATIONS ・Desinged for general-purpose power amplifier and applications PINNING see Fig.2

2SA755

Abstract: 2SC1419 2SA754
Contextual Info: JMnic Product Specification 2SA755 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1419 ・Note:Type 2SA754 with short pin APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter

TF 745-A

Abstract: 2SA745 2SA744 2SC1402 2SA745A 1403A TF 745
Contextual Info: JMnic Product Specification 2SA744/745/745A Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC1402/1403/1403A APPLICATIONS ・For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SA766

Abstract: 2SC1450
Contextual Info: JMnic Product Specification 2SA766 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・High power dissipation ・Complement to type 2SC1450 APPLICATIONS ・Line-operated vertical deflection output ・Medium power amplifier PINNING see Fig.2

2SC1403

Contextual Info: Inchange Semiconductor Product Specification 2SC1403 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SA764

Abstract: 2SC1444 2SC144
Contextual Info: Inchange Semiconductor Product Specification 2SA764 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2SC1444 APPLICATIONS ·Desinged for general-purpose power amplifier and applications

2SA755

Abstract: 2sc1419 2SA754 2sa7 2sc141
Contextual Info: Inchange Semiconductor Product Specification 2SA755 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1419 ·Note:Type 2SA754 with short pin APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION

2SC1450

Abstract: 2SA766
Contextual Info: Inchange Semiconductor Product Specification 2SC1450 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Wide area of safe operation ·High collector-emitter breakdown voltage :VCEO=150V min ·Complement to type 2SA766 APPLICATIONS ·For power amplifier and vertical output

2SC1403

Contextual Info: SavantIC Semiconductor Product Specification 2SC1403 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC1413A

Contextual Info: SavantIC Semiconductor Product Specification 2SC1413A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SA740

Abstract: 2SC1448
Contextual Info: SavantIC Semiconductor Product Specification 2SA740 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1448 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2

2SC1440

Contextual Info: SavantIC Semiconductor Product Specification 2SC1440 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING see Fig.2 PIN

2SC1472

Abstract: DSA003778
Contextual Info: 2SC1472 K Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 2. Collector 3. Base 3 2 1 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

2SC1445

Abstract: 2SA765
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA765 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 4A ·Complement to Type 2SC1445 APPLICATIONS

2SC1448

Abstract: 2SA740
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA740 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC1448 APPLICATIONS ·Power amplifier applications.

2SC1473

Abstract: 2SA1018 2SA1767 2SC1473A TRANSISTOR 2sc1473
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 High collector to emitter voltage VCEO. High transition frequency fT.

Contextual Info: UMY3N / UNZ2N / FMY3A / FMY4A / IMZ2A Transistors I General Purpose Transistor Power Management UMY3N / UMZ2N / FMY3A / FMY4A / IMZ2A •Features 1 ) Two 2SA1037AK and 2SC1412K chips are housed in a UMT or SMT package. •Absolute maximum ratings (Tas 25 £}

2sc1472

Abstract: Hitachi DSA002754
Contextual Info: 2SC1472 K Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage

Contextual Info: 2SC1465 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)7.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

2sc1473

Abstract: 2sa1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2

2sc1470

Contextual Info: !j£Ti£iy ^zmi-Conductoi Lpioducti, dna. tx ^j 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC1470 SILICON NPN POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT

2SC3361-5

Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68