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    2SC2001 Search Results

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    2SC2001 Price and Stock

    Rochester Electronics LLC 2SC2001-A

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SC2001-A Bulk 1,353
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    Rochester Electronics LLC 2SC2001-T-A

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SC2001-T-A Bulk 1,353
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    Micro Commercial Components 2SC2001-M-AP

    TRANS NPN 25V 0.7A TO92
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    DigiKey 2SC2001-M-AP Ammo Pack
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    Micro Commercial Components 2SC2001-L-AP

    TRANS NPN 25V 0.7A TO92
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    Micro Commercial Components 2SC2001-K-AP

    TRANS NPN 25V 0.7A TO92
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    2SC2001 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2001 Micro Commercial Components NPN Silicon Plastic-Encapsulate Transistor Original PDF
    2SC2001 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC2001 NEC Semiconductor Selection Guide Original PDF
    2SC2001 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SC2001 Various Russian Datasheets Transistor Original PDF
    2SC2001 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC2001 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC2001 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2001 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2001 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2001 Unknown Cross Reference Datasheet Scan PDF
    2SC2001 Unknown Scan PDF
    2SC2001 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2001 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2001 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2001 Unknown Silicon NPN Transistor Scan PDF
    2SC2001 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2001 NEC NPN SILICON TRANSISTOR Scan PDF
    2SC2001 USHA Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 700mA. Scan PDF
    2SC2001K Micro Commercial Components TRANS GP BJT NPN 25V 0.7A 3TO-92 Original PDF

    2SC2001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C2001

    Abstract: c2001 transistor 2SC200
    Text: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A


    Original     		PDF 2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 10mAdc, transistor C2001 c2001 transistor 2SC200

    2SC2001

    Abstract: No abstract text available
    Text: 2SC2001 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 2SC2001 100mA) 700mA) 100mA 700mA, 30MHz

    2SC2001

    Abstract: 2sc2001 transistor
    Text: 2SC2001 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR 30 V 3. BASE 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC2001 100mA 700mA, 30MHz 2SC2001 2sc2001 transistor

    2SC2001

    Abstract: transistor 2sc2001
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA, 2SC2001 transistor 2sc2001

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2001   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V


    Original     		PDF 2SC2001 -55OC 10mAdc, 100uAdc, 30Vdc,

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V


    Original     		PDF 2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001

    Untitled

    Abstract: No abstract text available
    Text: MCC Features • • • • 2SC2001   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC


    Original     		PDF 2SC2001 -55OC 10mAdc, 100uAdc, 30Vdc, 20Vdc, 100mAdc, 700mAdc, 70mAdc)

    transistor C2001

    Abstract: C2001 c2001 transistor 2SC2001K
    Text: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A


    Original     		PDF 2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 10mAdc, transistor C2001 C2001 c2001 transistor 2SC2001K

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SC2001 TRANSISTOR NPN 1. EMITTER FEATURES z High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)


    Original     		PDF 2SC2001 100mA) 700mA) 100mA 700mA, 30MHz

    transistor 2sc2001

    Abstract: 2SC2001 2SC2001 transistor
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA, transistor 2sc2001 2SC2001 2SC2001 transistor

    2SC2001

    Abstract: No abstract text available
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA, 2SC2001

    2SC2001

    Abstract: 2SC2001L 2SC200 2SC2001K 2SC2001-L 2SC2001-M 2SC2001-K
    Text: 2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  High hFE and low VCE sat hFE(IC=100mA)：200(Typ) VCE(sat)(700mA)：0.2V(Typ) G


    Original     		PDF 2SC2001 100mA 700mA 2SC2001-M 2SC2001-L 2SC2001-K 700mA, 17-Feb-2011 100mA 2SC2001 2SC2001L 2SC200 2SC2001K 2SC2001-L 2SC2001-M 2SC2001-K

    Untitled

    Abstract: No abstract text available
    Text: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA,

    2SC2001

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SC2001 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83)


    Original     		PDF 2SC2001 700mA, 100mA, 2SC2001

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR（NPN ） FEATURES Power dissipation PCM : 0.6 Collector current ICM : 0.7 Collector-base voltage V BR CBO : 30 TO—92 W （Tamb=25℃） 1. EMITTER


    Original     		PDF 2SC2001 30MHz 270TYP 050TYP

    2SC2001

    Abstract: No abstract text available
    Text: 2SC2001 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC


    Original     		PDF 2SC2001 -55OC 100mAdc, 700mAdc, 70mAdc) 10mAdc, 30MHz) 2SC2001

    transistor C2001

    Abstract: c2001 transistor C2001 C2001 npn 2sc2001 transistor 2sc2001
    Text: MCC TM Micro Commercial Components 2SC2001 2SC2001-M 2SC2001-L 2SC2001-K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A


    Original     		PDF 2SC2001 2SC2001-M 2SC2001-L 2SC2001-K -55OC C2001 transistor C2001 c2001 transistor C2001 C2001 npn 2sc2001 transistor 2sc2001

    tt 2144

    Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
    Text: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381


    OCR Scan     		PDF 2SC1947 2SC1965 2SC2078 2SB858 2SD734 2SC2001 2SD467 2SC1383 2SC3580 2SC3377 tt 2144 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947

    transistor 2sc2001

    Abstract: 2SC2001
    Text: NPN SILICON TRANSISTOR 2SC2001 DESC R IP TIO N The 2SC2001 is designed for use in output stage of portable R A D IO and cassette type tape recorder, general purpose applica­ tions. FEATURES • High total power dissipation. PT : 600 mW • High hFE and low V CE sat


    OCR Scan     		PDF 2SC2001 2SC2001 transistor 2sc2001

    2SD454

    Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
    Text: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *


    OCR Scan     		PDF 2SD439 2SD457 2SD642 2SD1196 2SD635 2SD633 2SD657 2SD523 2SC1449 2SC2236 2SD454 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526

    2SC1216

    Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
    Text: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358


    OCR Scan     		PDF 2sd425 2sc1570 2sc732tm 2sc1842 2sc2634 2sc2320l 2sc1740ln 2sc1843 2SC1216 sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2sc1162

    D1088

    Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
    Text: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o


    OCR Scan     		PDF 2SC2001 02SA952tl SC-43B D11738JJ3V0DS00 10lfllAfl D1088 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33

    2SC2001

    Abstract: PT-600
    Text: Transistors 2SC2001 USHA INDIA LTD


    OCR Scan     		PDF 2SC2001 -55M50 2SC2001 PT-600

    tl700

    Abstract: 2SC2001 transistor 2sc2001
    Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCR IPTIO N 2SC2001 The 2SC2001 is designed fo r use in o u tp u t stage o f portable PAC KAG E D IM E N S IO N S R A D IO and cassette type tape recorder, general purpose applica­ in m illim e te rs inches tions.


    OCR Scan     		PDF 2SC2001 2SC2001 tl700 transistor 2sc2001