2SC207 Search Results

2SC2075

Abstract: 2SC207S 27mhz rc circuit 2SC2075A
Contextual Info: SILICON NPN EPITAXIAL T Y P E 2SC2075 27MHz POWER AMPLIFIER APPLICATIONS. Unit in mm 03.6±O .2 FEATURES : 31n '0 • Recommended for Output Stage Application of AM 4W Transmitter. & • High Power Gain. • Wide Area of Safe Operation. MAXIMUM RATINGS Ta=25°C

2SC2078

Abstract: 2sc2078 amplifier 2SC2078 Datasheet 2sc2078 Transistor NPN rf transistor RF POWER TRANSISTOR NPN 2sc2078 2sc207827mhz
Contextual Info: Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C

transistor 2SA

Abstract: 2SA940 AC550 2sa 940 2SC2073
Contextual Info: S / U D > P N P = * # « * - t t f é h ^ : / 5; 3 ^ SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o nummm O MflilpJttiaffl 940 2SA Unit in m m 0Z.6±O.2 o Power Amplifier o Vertical Output 2302073 Applications Applications t ^ i' '/ >J Complementary to 2SC2073

A940A

Abstract: 2SA940A A940 2SC2073A
Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

transistor 2SC2078

Abstract: 2sc2078 2sc2078 Transistor 2SC207S
Contextual Info: Ordering number : EN462E N0.462E 2SC2078 NPN Epitaxial Planar Silicon Transistor SANYO 27MHz RF Power Amp Applications Absolute Maxima» Ratings at Ta=25°C Colleetor-to-Base Voltage CBO Collector-to-Emitter Voltage VCER Emitter-to-Base Voltage VEB0 Collector Current

2SA940

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2073 Features • • • • • • Halogen free available upon request by adding suffix "-HF" Wide safe Operating Area.

2SC2076

Abstract: class d amp ic e1aj T092
Contextual Info: 2SC2076 2SC2076 '> ij u y N P N x fcf ^=-'> 77/ U' / v — NP N Ep itax ial Planar Amplifier W ^ [/F e a tu r e s A M /F M R FliipI, m ¡1#-, I F i c * T 't o Suitable for RF amp., OSC, mix. and IF amp. in F M /A M radios. ^ \ / L a r g e with standing capability against

2SA940A

Abstract: 2SC2073A
Contextual Info: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SA940A Unit in mm PO W ER AM PLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 10 ± 0.3 03.2 ± 0.2 I- "L - • 2.7± 0.2 Complementary to 2SC2073A

PT8828

Abstract: sot123 package KT922G 2SC1239 SGSF324 motorola 2n4932 BLY93A S0122 J03020 2SC2094
Contextual Info: RF POWER SILICON NPN Item Part Number Number I C 5 10 >= 2.5 A, 2SC1398 2S01802 2N4226 2SC2078 2SC1909 2SC3294 2S01724 2S01815 2N3928 2N3929 ~~g~i~4 15 20 S01222-5 2N5642 2SC1306 2SC1306 SK3529 2SC585 2SC636 BLX13 ~t~~~~ 25 30 BlY93A J03020 BlX13C BlW83 BlY93C

Contextual Info: 2SC2079 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)700m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.170 h(FE) Max. Current gain.

2SA940

Abstract: 2SC2073
Contextual Info: JMnic Product Specification 2SA940 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2073 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA940

Abstract: Z10A1 2sc2073
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA940 Unit in nan POWER A M P L I F I E R 10.31ÍAX. 0:s.6±az AP P LIC A TIO N S . V E R T IC A L OUTPUT A P P L IC A T IO N S - FEATURES: . Complementary to 2SC2073 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING

2sa940 2sc2073

Abstract: 2SA940
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm POVER A M P L I F I E R A P P L IC A T IO N S . VE R TIC A L A P P L IC A T IO N S . O U T PU T j a 3 M A X . 0 1 .tS zO .ll c r f ir i FEATURES: «Ô . Complementary to 2SC2073 i_ i . 5 MAX . MAXIMUM RATINGS (Ta=25°C)

2SC2073

Abstract: 2sc2073 amplifier transistor 2sc2073 2SA940
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications.

2SA940

Abstract: 2SA940 equivalent 2SC2073
Contextual Info: PNP 2SA940 EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT TO-220 ! Complementary to 2SC2073 ABSOLUTE MAXIMUM RATING Ta=25°c c Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)

2SA940

Abstract: 2SC2073 2SA94 PEC 120V
Contextual Info: ÆàMOS PEC PNP SILICON POWER TRANSISTORS PNP 2SA940 2SA940 transistor is designed for use in general purpose power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEO= 150V Min * DC Current Gain hFE= 40-140@lc= 500mA * Complementary NPN 2SC2073

2SC2075

Abstract: 27MHz power amplifier 2SC-2075 27mhz transmitter circuit
Contextual Info: SavantIC Semiconductor Product Specification 2SC2075 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High transition frequency ·Wide area of safe operation APPLICATIONS ·27MHz power amplifier applications ·Recommended for output stage application

2SC2804

Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Contextual Info: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787

2SC2073

Abstract: 2SA940
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC2073

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage

mx 2sb834

Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Contextual Info: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO

Contextual Info: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 7 <; A Q A H A Unit in mm POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 101 0.3 • ^3.2 ±0.2 2_,7±g Complementary to 2SC2073A MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING

2SC2073

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector

2SC2078

Abstract: 2sc207827mhz 2SC-2078 048PC D101 D207 ITR05108 ITR05109 ITR05110 ITR05111
Contextual Info: 注文コード No. N 4 6 2 E 2SC2078 No. N 4 6 2 E 20100 半導体ニューズ No.462A（’ 91 大信号 D.B Vol.1 No.462D）とさしかえてください。 2SC2078 NPN エピタキシァルプレーナ形シリコントランジスタ 27MHz 高周波電力増幅用