2SC21 Search Results

P104W

Abstract: 2SC2104
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2104 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, P1=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VcC=15V, Pi=0.4W, f=470MHz

2SC2178

Abstract: copper wire
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2178 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=175MHz, VCC=12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pl=1.3W, f=175MHz

2SC2139

Abstract: 400V switching transistor 400V voltage regulator npn transistor 400V DC DC converter 5v to 400V NPN transistor for switching applications, 400V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2139 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications.

2SC2120

Contextual Info: DC COMPONENTS CO., LTD. 2SC2120 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o

2SC2151

Contextual Info: Inchange Semiconductor Product Specification 2SC2151 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING See Fig.2 PIN DESCRIPTION

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2120 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • B 型プッシュプルで 1 W の出力が得られます。

2SC2168

Abstract: VCEO200V
Contextual Info: SavantIC Semiconductor Product Specification 2SC2168 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector-emitter breakdown voltage : VCEO=200V min APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications

2SC2189

Contextual Info: SavantIC Semiconductor Product Specification 2SC2189 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For high speed switching and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: TOSHIBA {DISCRETE/OPTO} P' . — — ~5b D0074Tfl 3 DE I ^ O T V E S O — 9097250 TOSHIBA CDIS C R E T E / O P T O 5 òC D Y - 3 3-/3 07^98 2SC2181 SILICON NPN EPITA X IA L PLANAR TYPE Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 2 -0 3 .8 ± a 1

Contextual Info: TOSHIBA {DI SC RE TE /O PT O} 9097250 TOSHIBA St. DE 1 ^ 7 5 5 0 56C 0 7 4 8 0 QOD74ñO h f- 2SC2102 C D IS C R E T E / O P T O SILICON NPN EPITA X IA L PLANAR TYPE _ Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=.l5W Min.)

2SA950

Abstract: 2SC2120
Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

Delco

Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -

Contextual Info: 2SC2104 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)7.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 0.45±0.05 0.55±0.1 Symbol Ratings Unit Collector to base voltage VCBO 45 V Collector to emitter voltage

2SC2131

Contextual Info: ^s.mi-Conau.cto'L ^Pioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OUTLINE DRAWING Dimensions ,n mm «!9-39 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2131 is a silicon NPN epitaxial planar type transistor designed

2sc2188

Abstract: 2SC2153 2SC218
Contextual Info: PANASONIC INDL/E LE Ki SE MI} 72C D | [^35054 E h T 3 - / 2SC 2153. 2SC2153 ' > U =1 y NP N 7 V — NP N Planar iS J l];& iiitIffl/R F Amplifier • ^ /F e a tu r e s • f > (a iê g c fT *''i '''o /H ig h fT • ‘Üij|li?-;!r Crb • ^<— V ^ /L o w Crb

IC 7411 DATA SHEET

Abstract: IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 2SC2120 Voltts IC 7416 datasheet 7411 IC
Contextual Info: TO-92 PLASTIC-ENCAPSULATE TRANSISTORS 2SC2120 TRANSISTOR NPN FEATURES Power dissipation PCM: 0.6W (Tamb=25ºC) Collector Current TO-92 ICM: 0.8A 1. EMITTER Collector-base voltage V 2. COLLECTOR : 35V (BR) CBO Operating and storage junction temperature range

2SC2120-0

Abstract: 2SA950 2SC2120
Contextual Info: TO SH IBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • . 5.1 MAX. High hpE • hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C)

2SC2120

Abstract: 2SA950 2sC2120 y transistor transistor 2sc2120
Contextual Info: 2SC2120 TO SH IBA 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High hEE : hEE (i) = 100~320 • 1 Watts Amplifier Applications. • Complementary to 2SA950 . 5.1 MAX. 0.45 0.55 MAX.

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2sc2188

Contextual Info: Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as

Contextual Info: 2SC2199 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)150 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)