2SC218 Search Results

2SC2189

Contextual Info: SavantIC Semiconductor Product Specification 2SC2189 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For high speed switching and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: TOSHIBA {DISCRETE/OPTO} P' . — — ~5b D0074Tfl 3 DE I ^ O T V E S O — 9097250 TOSHIBA CDIS C R E T E / O P T O 5 òC D Y - 3 3-/3 07^98 2SC2181 SILICON NPN EPITA X IA L PLANAR TYPE Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 2 -0 3 .8 ± a 1

2sc2888

Abstract: 2SC2926 2SC2166 2sc1047 2sc1907 2SC387A 2SD1270 2Sd917 2SC787 2sc2314
Contextual Info: - 96 - sa € * * * * * * Type No. 2SC 740 2SC 7 412SC 742 2SC 743 2SC 745 2SC 746 2SC 748 * 2SC 749 * 2SC 751 2SC 752 * 2SC 753 * 2SC 754 * 2SC 755 * 2SC 756A a € Manuf. z m SANYO # z m Z «±ii t±M «±S 2SC2183 S drài 2SC2999 2SC4455 s 0 s V — —

Contextual Info: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 0.45±0.05 0.55±0.1 Symbol Ratings Unit Collector to base voltage VCBO 45 V Collector to emitter voltage

2sc2188

Contextual Info: Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

2SC2189

Contextual Info: 2SC2189 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING ＮＰＮ三重拡散プレーナ形 高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-3 特長 ：Features 特長： 高速 ｽｲｯﾁﾝｸﾞ High speed switching

2sc2915 hitachi

Abstract: 2Sc515a 2SC2611 2SC1515 2SC2181 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762
Contextual Info: 116 - a m. £ Type No. 2SC 1490 t h□— ^ 2SC 1491 i h□ — =7 2SC2102 2SC2102 2SC 2SC 2SC 2SC ¿01/ 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC ^ h□— •=£ h□ — 2SC2103 2SC2181 2SC2282 2SC3008-KA 2SC2917 2SC2181 2SC1165 2SC2917 2SC2762 2SC 1514

2SC2181

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2181 Unit in m m VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : 2-iZ>2,2±0. Output Power : f=175MHz, Po=40W (Min. V C C =13,5V, P-^lOW ) 100% Te st ed fo r L o a d M i s m a t c h S t r e s s at A l l P h a s e Angles with

NPN transistor collector base and emitter

Abstract: 2SC2189
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2189 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and power amplifier

Contextual Info: 2SC2183 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)4.5 Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2sc2188

Contextual Info: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 1.0 (1.0) (1.5) (1.5) R 0.9 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit Collector-base voltage (Emitter open)

2sc2188

Contextual Info: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 1.0 (1.0) (1.5) R 0.9 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 • High transition frequency fT • Satisfactory linearity of forward current transfer ratio hFE

2SC2181

Abstract: 10ID cdi ic cdi unit
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ~5b BE I^ D^ VE SO □ □□74‘ìfl 3 | 5 òC CDI S C R E T E /O P T O “Ú 7 4-9 8 D 7 "- -J3-/3 2SC2181 SILICON NPN EPITAXIAL PLANAR TYPE_ Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : .

Contextual Info: 2SC2189 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SC635

Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
Contextual Info: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

2SC2897

Abstract: 2SC3660A SD1477 2SC2890 2SC2891 nec 2sc3660A 2sc635 2SC1804 2sc573 sd2900
Contextual Info: June 1999 ST CROSS REFERENCE WITH NEC INDUSTRY PART NUMBER 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 2SC2628 2SC2629

2sc2188

Contextual Info: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 Emitter-base voltage Collector open Collector current Collector power dissipation Junction temperature Storage temperature 4.5±0.1

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

transistor m6e

Abstract: ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications CO LL ME R S E M I C O N D U C T O R INC MAE D Bi 2 2 3 Ö 7 S 2 D 0 0 1 b 0 3 13T H C O L "•pV3>-t3 m Buffer drive tra n sisto rs • Best suited for driving transistor m od ules. • A ll term in a ls are insulated from m ou n tin g plate.

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31