2SC223 Search Results

2SC2230

Abstract: c2230a C2230
Contextual Info: SILICON NPN T R IP LE DIFFU SED T Y P E P C T P R O C E S S 2SC2230,2SC2230A HIGH VOLTAGE G ENERAL AM PLIFIER APPLICATIONS. CO LO R TV CLASS B S O U N D OUTPUT APPLICATIONS. • • High Voltage : VcEO = 180V (2SC2230A) High DC Current Gain. M A X IM U M RATINGS (Ta = 25°C)

transistor 2sa968b

Contextual Info: i TOSHIBA TRANSISTOR ZSA96öB SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency: fx=100MHz (Typ.) . Complementary to 2SC2238B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

2sa965

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SC2238

Abstract: 2SC2238 2SA968 2SC2238A 2SC2238B 2SA968
Contextual Info: JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION ・With TO-220 package ・Complement to type 2SA968 ・High breakdown votage APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

c2236 transistor

Abstract: transistor C2236 C2236 NPN Transistor C2236 c2236 transistor equivalent C2236 Y 2SC2236 2SA966
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

c2230a

Abstract: C2230 2SC2230 2SC2230 GR 2SC2230A
Contextual Info: 2SC2230,2SC2230A 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2230,2SC2230A ○ 高耐圧一般増幅用 ○ カラーテレビ B 級音声出力用 • 単位: mm 高耐圧です。: VCEO = 180 V (2SC2230A) 絶対最大定格 (Ta = 25°C)

Toshiba transistor C2235

Abstract: c2235 transistor C2235 Transistor C2235 2SA965 2SC2235
Contextual Info: 2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications • Unit: mm Complementary to 2SA965. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

2SC2235

Abstract: C2235 2SA965 c2235 Y
Contextual Info: 2SC2235 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2235 ○ 電力増幅用 ○ 励振段増幅用 • 単位: mm 2SA965 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定

transistor C2230

Abstract: C2230 C2230 NPN Transistor c2230a 2SC2230 2SC2230A
Contextual Info: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain

A966

Abstract: a966 y 2SA966 A966 PNP A-966 2SC2236 2SA966 Y
Contextual Info: 2SA966 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA966 ○ 低周波電力増幅用 • 単位: mm 2SC2236 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

2SC2239

Abstract: 2SA969
Contextual Info: SavantIC Semiconductor Product Specification 2SC2239 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SA969 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING See Fig.2

Contextual Info: 45E D i Q W S S Q □ □ 1 7 Û D C1 D • TOSM ■ TOSHIBA TRANSISTOR_ 2SC2238B SILICON NPN EPITAXIAL T Y P E PCT PROCESS TOSHIBA (DISCRETE/OPTO) POWER AMPLIFIER APPLICATIONS. Unit DRIVER STAGE AMPLIFIER APPLICATIONS. 1Q.3MAX.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dim ensions in mm FEATURES

2SC2236

Abstract: transistor 2sC2236 2SA966
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC2235

Abstract: transistor 2sC2235 2SA965
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2235 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Complementary to 2SA965 2. COLLECTER 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) B Symbol VCBO B

transistor a965

Abstract: a965 a965 transistor 2SA965 2sc2235 datasheet a965 y Toshiba transistor a965 2SC2235
Contextual Info: 2SA965 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA965 Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SC2235. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Transistor C2235

Abstract: c2235 transistor c2235 2SC2235 Toshiba transistor C2235 C2235 NPN Transistor transistor 2sC2235 c2235 Y MA80240 2SA965
Contextual Info: 2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications • Unit: mm Complementary to 2SA965. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA965 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Complementary to 2SC2235 z Power Amplifier Applications 2. COLLECTOR 3. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2236 TO-92L TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: M TO-92MOD Plastic-Encapsulate Transistors^ ^ C ^ 2SC2230 TRANSISTOR NPN FE AT U RES T O -9 2 M O D P cm : 0.8W (Tamb=25'C) 1 EM ITTER lew: 0 .1 A 2 .C O L L E C T O R vottag* 3 .B A S E V(BR)CBO: 200 V PPtejÜÉ^l?éwdi;to fa o « junction temperature range

2SA966

Abstract: 2SC2236
Contextual Info: TOSHIBA 2SC2236 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2236 Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS. 15.1 M AX. • Complementary to 2SA966 and 3 Watts Output Applications. 0.75M A X 1.0M AX. 0.8M A X . M A X IM U M RATINGS (Ta = 25°C)

2sa968

Abstract: 2SC2238 2SA968 2sa968a PNP 2SA968 2sc2238 2sa968 data sheet 2SA968B 2SA968 Y
Contextual Info: Inchange Semiconductor Product Specification 2SA968 2SA968A 2SA968B Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2238 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

2SC2239

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO=160V(Min) ·Good Linearity of hFE APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

2SA966

Abstract: 2SC2236
Contextual Info: TOSHIBA 2SA966 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUD IO PO W ER A M PLIFIER APPLICATIONS 5.1 MAX. • Complementary to 2SC2236 and 3 W Output Applications. M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO