2SC236 Search Results

2SC2361

Abstract: 2sa1123
Contextual Info: Inchange Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION

2SC2362

Abstract: 2SC236 transistor 2sc2362
Contextual Info: ST 2SC2362 NPN Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25℃

a1016

Abstract: 2SA2362 2SA1016 2SC236 C2362 2SA23 A1016K 2SC2362 2362K 2SA1016K
Contextual Info: O rdering num ber: EN 572D 2SA1016,1016K/2SC2362,2362K N0.572D PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp Applications i :2SA1016,1016K A bsolute Maximum Ratings at Ta=25 °C Collector to Base Voltage VCBO Collector to Emitter Voltage

transistor c2362

Abstract: 2SC2362 A1016 2SA2362 2SA1016 C2362 2SA1016K 2sc2362 TRANSISTOR 2SA23 2SC2362K
Contextual Info: Ordering number: EN 572D 2SA1016.1016K/2SC2362,2362K k J PNP/ NPN Epitaxial Planar Silicon Transistors SAKYO High-Voltage Low-Noise Amp _ Applications : 2SA101 6 ,1 0 16K Absolute Maximum Ratings at t . =25°C 2SA1016,2SC2362 2SA1016K,2SC2362K u n i t

2sc2362

Abstract: 2SA1016 2SA1016K 2SC2362K d 05724 2SC2362K – G Rank
Contextual Info: Ordering number : EN0572F 2SA1016, 1016K / 2SC2362, 2362K SANYO Semiconductors DATA SHEET 2SA1016, 1016K 2SC2362, 2362K PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp Applications Specifications : 2SA1016, 1016K Absolute Maximum Ratings at Ta=25°C

Contextual Info: 2SC2365 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500è V(BR)CBO (V)600 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2365

Abstract: 8 pin 4v power supply ic
Contextual Info: Product Specification www.jmnic.com 2SC2365 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in switch-mode CTV supply systems PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol

2SC2365

Contextual Info: Inchange Semiconductor Product Specification 2SC2365 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in switch-mode CTV supply systems PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

2SC2369

Abstract: marking 38 marking F10
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SC2369 2SC2369 is designed for High frequency Low Noise A m pli­ PACKAGE DIMENSIONS fier. in millimeters inches FEATURES • NF 1.5 dB TYP. @ f= 1.0 GHz 14 dB TYP. @ f= 1.0 GHz • MAG ABSOLUTE M AXIMUM RATINGS

2SC1634

Abstract: 2SC510 TM 1298 2SC2258 2SC828 2SC4455 2SC3419 1279S 2SC752G-TM 2SC2204
Contextual Info: 110 - m tt « 2SC 1267 2SC 1271 2SC 1272 2SC 1273 2SC 1274 2SC 1276 2 SC 1277 2 SC 1278 2SC 1278S 2SC 1279S 2SC 1280 2SC 12 80AS 2SC 1280S 2SC 1281 2SC1236 2SC1236 / a s s a a a a a a a a a a * s v h n # 2SC641 K 2SC752( G ) TM 2SC3581 2SC2362K 2SC1515(K)

2SA1016

Abstract: 2SC2362 2SA1016K 2362K 2SC2362K 1016K SC22-3 6D8B
Contextual Info: 注文コード No. N 0 5 7 2 F 2SA1016,1016K / 2SC2362,2362K 三洋半導体データシート 半導体ニューズ No.N572D をさしかえてください。 2SA1016, 1016K 2SC2362, 2362K PNP / NPN エピタキシァルプレーナ型シリコントランジスタ

Contextual Info: 2SC2366 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)40 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

transistor 2sc2362

Abstract: 2sc2362 TRANSISTOR 2SC2362 2SC23
Contextual Info: ST 2SC2362 NPN Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25℃

2SC2368

Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SC2368 is designed for High frequency Low Noise A m pli­ fier. FEATURES PACKAGE DIMENSIONS in millimeters inches • NF 2.3 dB TYP. @500 MHz 17 dB TYP. @500 MHz • MAG mg <9 o ?o ABSOLUTE M A X IM U M RATINGS

a1016

Abstract: 2SA1016 C2362 2SC2362 2SC2362K 2SA1016K ENN572E 1016k
Contextual Info: Ordering number:ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 2

2SC2368

Abstract: nec microwave
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC2368 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PACKAGE D IM E N S IO N S in m illim e te rs inches NF M AG 2 .3 d B TY P . @ 500 MHz 17dB TY P . @ 500 MHz IL U T E M A X IM U M R A TIN G S (Ta = 25°C)

2sc2362 equivalent

Abstract: 2sc2362
Contextual Info: ST 2SC2362 NPN Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25℃

2SC2365

Contextual Info: SavantIC Semiconductor Product Specification 2SC2365 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in switch-mode CTV supply systems PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

2SC2363

Abstract: 2SA1017 C511B transistor 2sc2363
Contextual Info: 2SA1017 PNP/ 2SC2363 NPN Epitaxial Planar Type Silicon Transistor For Predriver of 4 0 to 50 W AF Amplifier 40 50W ttì 2 ★ A com plem entary pair. ★ ) shows 2 S A 1 0 1 7 only. ★ For th e details, see 2 S C 2 3 6 3 section. '7'J C511B () l* lli

2SC2369

Abstract: C2369 2369 transistor N 75 z
Contextual Info: NEC SILICON TRANSISTOR BECTHOH DEVICE 2SC2369 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DIMENSIONS in millimeters {inches} NF MAG 1 .5 d B TYP. > f = 1 .0 G H z 1 4d B TYP. i f = 1 .0 G H z ABSOLUTE M AXIM UM RATINGS Ta = 25°C

2SC2362

Contextual Info: ST 2SC2362 NPN Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25℃

25c3356

Abstract: 2SC3170 2SD1431 3519A 2SC2376 2SC2553 2sc3153 2sc3743 2SC3303 2SC3477
Contextual Info: - Sí S tt Type No. « £ 2SC 3501 2 SC 3502 ^ = H * SANYO 2SC4161 m NEC 2SC3272 2SC3272 2SC3153 2SC3307 T ZÒU31DZ 2SDÍ430 T 2SC3153 2SD1431 fâ T 2SC3153 2SD1432 2SC3552 2SC3307 2SC2834A 2SC3765 fâ T 2 SC 3510 ÍI 2SC 3511 a ïi 2SC3302 2SC2369 2SC 3512

2SA1123

Abstract: 2SC2361 TO-220C
Contextual Info: SavantIC Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1

Contextual Info: Ordering num ber:EN 572D SA\YO No.572D 2SA1016,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _Applications : 2 S A 1 0 1 6 ,1 0 1 6 K 2 S A 1 0 1 6 ,2 S C 2 362 2 S A 1 0 1 6 K ,2 S C 2 3 6 2 K u n i t