2SC240 Search Results

SMD IC MARKING GP

Abstract: 2SC2404
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High transition frequency fT 0.55 Optimum for RF amplification of FM/AM radios +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1034, 2SA1035 Silicon PNP epitaxial planar type Unit: mm For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 0.40+0.10 –0.05 0.16+0.10 –0.06 −35

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2405, 2SC2406 Silicon NPN epitaxial planar type Unit: mm For low-frequency and low-noise amplification Complementary to 2SA1034 and 2SA1035 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1

2SA1034

Abstract: 2SC2405 2SC2406
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2405 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1034 • Package  Low noise voltage NV  High forward current transfer ratio hFE

2SA1035

Abstract: 2SC2406
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2406 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1035 • Package  Low noise voltage NV  High forward current transfer ratio hFE

2SB0709A

Abstract: 2SB709A 2SC2404 XN04683 XN4683
Contextual Info: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 3 2 0.50+0.10 –0.05 • 2SC2404 + 2SB0709A (2SB709A) Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)

2SC2404

Contextual Info: Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.

2sa1034

Abstract: 2SA1035 2SC2405 2SC2406 Low-Frequency Low-Noise PNP transistor
Contextual Info: Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2405 and 2SC2406 Unit: mm • Features +0.2 Collector to 2SA1034 emitter voltage 2SA1035 V –55 –35 VCEO –55 VEBO –5 V Peak collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1034, 2SA1035 Silicon PNP epitaxial planar type Unit: mm For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 0.40+0.10 –0.05 0.16+0.10 –0.06 −35

2SC2407

Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE D ESCRIPTIO N 2SC2407 The 2SC2407 is designed for UH F and V H F amplifier. PACKAGE D IM E N S IO N S in m illim e te r s {in ch e s FE A TU R ES • Pou, : 160 mW TYP. @ f= 5 0 0 M H z , V CC= 1 2 .6 V Pi=5 mW Class B)

MARKING SR

Abstract: SS SMD MARKING SOT23 2SC2405 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2405 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Mini type package, allowing downsizing of the equipment and automatic 0.55 High forward current transfer ratio hFE. +0.1 1.3-0.1 +0.1 2.4-0.1

2SC2405

Abstract: 2SC2406 2SA1034 2SA1035
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2405, 2SC2406 Silicon NPN epitaxial planar type Unit: mm For low-frequency and low-noise amplification Complementary to 2SA1034 and 2SA1035 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1

2SA1034

Abstract: 2SA1035 2SC2405 2SC2406
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1034, 2SA1035 Silicon PNP epitaxial planar type Unit: mm For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 0.40+0.10 –0.05 0.16+0.10 –0.06 −35

2SA1034

Abstract: 2SA1035 2SC2405 2SC2406
Contextual Info: Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1034 and 2SA1035 Unit: mm • Features Parameter 2SC2405 base voltage 2SC2406 Collector to 1.9±0.1 2SC2405 Ratings 35 V 55 Emitter to base voltage

2SA1034

Abstract: 2SA1035 2SC2405 2SC2406
Contextual Info: Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2405 and 2SC2406 Unit: mm • Features +0.2 Collector to 2SA1034 emitter voltage 2SA1035 V –55 –35 VCEO –55 VEBO –5 V Peak collector current

2SC2404

Abstract: XP6534
Contextual Info: Composite Transistors XP6534 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SC2404 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

transistor 2sc2405

Abstract: 2sc2405 2SA1034 2SA1035 2SC2406
Contextual Info: Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1034 and 2SA1035 Unit: mm • Features 2SC2405 base voltage 2SC2406 Collector to 2SC2405 35 VCBO V 55 35 VCEO emitter voltage 2SC2406

2SA1034

Abstract: 2SA1035 2SC2405 2SC2406
Contextual Info: Transistors 2SA1034, 2SA1035 Silicon PNP epitaxial planar type Unit: mm For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 0.40+0.10 –0.05 0.16+0.10 –0.06 −35 V 1.1+0.2 –0.1 VCBO Unit −55 2SA1035 Collector-emitter voltage 2SA1034

SK3019

Abstract: 2sc4044s 2SC652 2SC947 BF262 2SC651 JE9016 2N270S nfe-12g 50m
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 SO S5 90 JE9016E JE9016F JE9016F JE9016G JE9016G JE9016 JE9016H JE9016H JE90161 JE90161 BF262 BF200 2SC947 2SC1047 2SC2404 BF200B 2SC707 2SC2377 BF1S0 2SC761

S21E2

Abstract: 2SC2408 NPN RF Transistor S21E-2 RF POWER TRANSISTOR NPN RF NPN TRANSISTOR
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION •Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS ·Designed for use in high frequency wide band amplifier.

2sc2404

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2404 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • Optimum for RF amplification of FM/AM radios

2SC2407

Abstract: PA33 SC-43A
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE D E S C R IP T IO N FEATU RES 2SC2407 The 2SC2407 is designed for U H F and V H F amplifier. Pout: 160 m W TYP. @ f= 5 0 0 M H z , V CC= 1 2 .6 V Pj=5 mW Class B ABSO LU TE M A X IM U M R A T IN G S Maximum Temperatures

2SC2414

Abstract: 2SA1035 2SA10 2SA1034 2SC2405 2SC2406 DDQ1170 2SC240 2SC241 panasonic 2SC
Contextual Info: PANASONIC INDL/ELEK-CSENI} 72C D | ^ 3 2 0 5 4 _T ~ - 3 h 1- □□ m i t ? 2 S C 2 4 0 5 > 2 SC 2 4 0 6 / S 2S C 2405, 2SC2406 '> ij n > NPN x fc?£ + '> 5’ ^U-7PU<— NPN Epitaxial Planar Low-noise Amplifier 2SA1034, 2SA1035 £ = ] > : / U

2SC2404

Abstract: XP06534 XP6534
Contextual Info: Composite Transistors XP06534 XP6534 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SC2404 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.