2SC254 Search Results

2SC2542

Abstract: 7 pin ic switching
Contextual Info: Inchange Semiconductor Product Specification 2SC2542 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters

2SC2545

Abstract: 2SC2547 2SA1083 2SA1084 2SA1085 2SC2546 2SC254 Hitachi DSA00108
Contextual Info: 2SC2545, 2SC2546, 2SC2547 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1083, 2SA1084 and 2SA1085 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SC2545, 2SC2546, 2SC2547 Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA002754

Contextual Info: 2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SC2396 2SC2543 2SC2544 Unit

2SC2547

Abstract: 2SC2545 2SC2545, 2SC2546 2SC2547
Contextual Info: 2SC2545,2SC2546,2SC2547 Silicon NPN Epitaxial HITACHI Application • L ow frequency low noise am plifier • C om plem entary pair w ith 2SA 1083, 2 S A I0 8 4 and 2SA 1085 Outline TO-92 1 i II I 1. Emitter 2. Collector 3. Base 3 2 U 1 395 2SC2545, 2SC2546,2SC2547

2sc2543

Abstract: 2SA1025
Contextual Info: 2SC2396,2SC2543,2SC2544 Silicon NPN Epitaxial HITACHI Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 1 h \ IP 1. Emitter 2. Collector 3. Base I 3 2 376 1 2SC2396,2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25°C)

2SC2S45

Abstract: 2SA1025 2SA108
Contextual Info: HITACHI 2SC2396, 2SC2543, 2SC2544 'S SiUCON NPN ePtTAXIAt LOW FREQUENCY AMPLIFIER Compìiwnontary p<nr with 2SA1025, 2SA108-. and 2SA1082 r~ r Î » A -Í.; It o * ^ JEOeC TO-92 I ABSOLUTE MAXIMUM RATINGS iTj 2 r C } I setu Symby". MAXIMUM COLLECTOR DISSIPATION

2SC2549

Contextual Info: 2SC2549 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2SC2547 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA1025

Abstract: Hitachi DSA002754
Contextual Info: 2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SA1025 2SA1081 2SA1082 Unit

CRO1C

Abstract: 2SA1025 2SC2543 k 4110 2SA1081 2SA1082 2SC2396 2SC2544
Contextual Info: HITACHI 2SA1025, 2SA1081, 2SA1082 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SC2396, 2SC2543 and 2SC2544 fjf 1. lim itic i 2 . C o lle c to r 3. D i k irt jlUrt JEDEC TO-92) MAXIMUM COLLECTOR DISSIPATION CURVE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SC2540

Abstract: 75MHZ
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2540 N PN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC 2540 is a silicon NPN ep itaxial planar typ e transistor designed fo r RF power am p lifie rs in V H F band m obile radio applications. D im e n sio n s in m m

2SC2547

Abstract: 2SC2545 2SC2546 Hitachi DSA0076
Contextual Info: 2SC2545, 2SC2546, 2SC2547 Silicon NPN Epitaxial ADE-208-1067A Z 2nd. Edition Mar. 2001 Application • Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2545, 2SC2546, 2SC2547 Absolute Maximum Ratings (Ta = 25°C)

2sc2547

Abstract: 2SC2545
Contextual Info: H ITACH I 2SC2545, 2SC2546, 2SC2547 SILICON NPN EPITAXIAL LOW FREQUENCY LOW NOiSE AMPLIFIER Complemenlary pair wilti 2SA1G&3, 2SA1084 and 2SA1095 fi«;:«? 2. n \ i p, I •b; / - JEDEC TO-92 ■ ABSOLUTE fJIAXIMUM RATINGS tTa^S’ C Item M CiStt ; BC2M7 ; Unit

2SC2540

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 5 4 0 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm R1

2SC2542

Contextual Info: SavantIC Semiconductor Product Specification 2SC2542 Silicon NPN Power Transistors DESCRIPTION With TO-220C package •High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters

k 3878

Abstract: t 3866 2SC3759 2SD1847 2sc4291 2sc3866 2SC4423 2sc3052 3882 2SC3729
Contextual Info: - ü 4t £ Type No. ^ 2SC 3860 2SC 3861 2SC 3862 2SC 3863 ✓ 2SC 3864 2SC 3865 £ Manuf. ^ S Z * SANYO = $ te T X 2 TOSHIBA B m NEC B ÎL HITACHI RN1211 2SC2548 S ± S FUJITSU A MATSUSHITA MITSUBISHI — ROHM ÜN42Í5 RT1NÍ40S DTC114ÎS te t h m. □ 175

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •

2SA1085

Abstract: 2SA1083 Hitachi DSA0097 2SA1084 2SC2545 2SC2546 2SC2547
Contextual Info: 2SA1083, 2SA1084, 2SA1085 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC2545, 2SC2546 and 2SC2547 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA1083, 2SA1084, 2SA1085 Absolute Maximum Ratings (Ta = 25°C)

2SA1025

Abstract: 2SA1081 2SA1082 2SC2396 2SC2543 2SC2544 2SC2545 2SC2546 2SC2547 Hitachi DSA00398
Contextual Info: 2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25°C)

2SC2542

Abstract: T151 T760 fuji lift inverters 31V0
Contextual Info: 2SC2542 N P N = n t& m 7 \s — f- B TRIPLE D IFFUSED PLANER TYPE X lttŒ , M & Z 'f 'y - r y f 'M HIGH VOLTAGE, HIGH SPEED SWITCHING • O utline D raw ings 45».* 1.3 ■#■¡ 1: F e a tu re s • E itM E .iiii% 7 A 'V + % s9 • ¡ B l f f U 'i H igh voltage, high speed sw itching

2SA1084

Abstract: 2SA1085 2SA1083 2SC2545 2SC2546 2SC2547 2SC2545, 2SC2546 2SC2547 Hitachi DSA00493 2SA1085 hitachi
Contextual Info: 2SA1083, 2SA1084, 2SA1085 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC2545, 2SC2546 and 2SC2547 Outline 2SA1083, 2SA1084, 2SA1085 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SA1083 2SA1084 2SA1085

2SC2547

Abstract: 2SC2545 2SC2545, 2SC2546 2SC2547 2SC2546 2SA1083 2SA1084 2SA1085 Hitachi DSA00493
Contextual Info: 2SC2545, 2SC2546, 2SC2547 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1083, 2SA1084 and 2SA1085 Outline 2SC2545, 2SC2546, 2SC2547 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SC2545 2SC2546 2SC2547

2SC2542

Abstract: 2SC25
Contextual Info: 2SC2542 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

Contextual Info: 2SC2543E Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)90 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)