2SC265 Search Results

2SC2650

Abstract: oz903
Contextual Info: TOSHIBA - C D I S CR E TE /O P TO J 9097250 TOSHIBA DF|-=m=J7250 <DISC R ET E/ OP TO 2SC2650 ' 56C Ö7 58 i 00D7SÖ1 D T ' - J J V ? S IL IC O N NPN T R IP L E D IF F U SE D TYPE 34.3MAX. 5.3MAX 3X0 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS.

transistor Ic 1A datasheet NPN

Abstract: 2SC2657 2sc265 IC Designs vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor transistor 800V 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications.

2sc2655

Abstract: 1345 NPN
Contextual Info: 2SC2655 NPN General Purpose Transistors P b Lead Pb -Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol Parameter Test unless otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO

2SC2654

Abstract: 2SA1129
Contextual Info: SavantIC Semiconductor Product Specification 2SC2654 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1129 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

2sc2655

Abstract: equivalent 2SC2655 2SA1020
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020

2sC2335

Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Contextual Info: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI

equivalent 2SC2655

Abstract: 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655
Contextual Info: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage

2SC2653

Abstract: 100-C
Contextual Info: Power T ransistors 2SC2653, 2SC2653 H 2SC2653, 2SC2653(H) Silicon PNP Triple-Diffused Planar Type Package Dimensions Horizontal Deflection Driver for Color TV set U n it ! mm • Features 10.0 • High co llector-em itter voltage 0.5 (V c e o ) • L arge collector power.dissipation (Pc)

2SC2655L

Abstract: 2SC2655
Contextual Info: ST 2SC2655L NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) „ ORDERING INFORMATION Ordering Number

C2655 NPN Transistor

Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655
Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

2SC2655

Abstract: transistor 2SC2655 IC 1730 2sc2655 y TO-92MOD transistor ic1A
Contextual Info: 2SC2655 TO-92MOD Transistor NPN TO-92MOD 1.EMITTER 1 2 3 5.800 6.200 2.COLLECTOR 3.BASE 8.400 8.800 Features — 0.900 1.100 0.400 0.600 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) High speed switching time: tstg=1 s(Typ.) Complementary to 2SA1020

B0719

Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH

equivalent 2SC2655

Abstract: 2sc2655 2SC2655 datasheet
Contextual Info: 2SC2655 2SC2655 TO-92MOD TRANSISTOR NPN FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2SC2655

Abstract: 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y
Contextual Info: T O SH IB A 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VCE (sat) = 0.5V (Max.) (IC = 1A) High Speed Switching Time : tgtg =1.0/^s (Typ.)

Contextual Info: UTC 2SC2655 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V (Max.) *High speed switching time tstg=1.0 s (Typ.) 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

2SC2879

Abstract: 150PEP
Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32

2SC2650

Abstract: 400V switching transistor 400V voltage regulator DC DC converter 5v to 400V npn transistor 400V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition.

Contextual Info: 2SC2652 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)85 I(C) Max. (A)20 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)12mØx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.150

2sc2655

Abstract: equivalent 2SC2655 2SA1020
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92L FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020 1.EMITTER

C2655 NPN Transistor

Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

Contextual Info: TOSHIBA 2SC2655 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C2 6 5 5 PO W ER AM PLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : VCE ( s a t ) = 0-5V (Max.) (Iç = lA) • High Speed Switching Time : ts^g=1.0/^s (Typ.)

High Current Switching Applications transistor

Abstract: 2SC2656 circuit power convertor dc to dc switching
Contextual Info: 2SC2656 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers