2SC2869 Search Results

2SC2869 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC2869		Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	73.71KB	1
2SC2869		Unknown	Transistor Substitution Data Book 1993	Scan	PDF	33.7KB	1
2SC2869		Unknown	The Japanese Transistor Manual 1981	Scan	PDF	102.75KB	2
2SC2869		NEC	Low Noise Amplifier of VHF & UHF band	Scan	PDF	32.42KB	1

2SC2869 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2869 Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION The 2SC2869 is designed fo r Low Noise A m plifier of PACKAGE DIMENSIONS VHF & UHF band. in millimeters inches FEATURES • Low Noise and High Gain NF = 1.2 dB TYP. Ga= 10.5 dB TYP. V Ce = 8 V, lc = 5 mA, f = 1.0 GHz	OCR Scan	2SC2869	PDF
2SC2869 Contextual Info: _PRELIMINARY SPECIFICATION NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTIO N 2SC2869 The 2SC2869 is designed for Low Noise A m plifier of P A C K A G E D IM ENSIONS V H F & U H F band. in m illim e te rs inches FEATURES • Low Noise and High Gain	OCR Scan	2SC2869 2SC2869	PDF
Contextual Info: 2SC2869 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)80m Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	2SC2869	PDF
NE21936 Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174 Contextual Info: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de signed for small signal amplifier and oscillator applications up	OCR Scan	QG013T3 r-31- NE219 NE21936 NE21935 equivalent 2SC2367 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF