2SC307 Search Results

Contextual Info: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)

C3076

Abstract: 2SC3076
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15

Contextual Info: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •

Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

J600 transistor

Abstract: transistor J600 2SC3070 VEBO-15V
Contextual Info: Ordering number: EN 923G _ 2SC3070 No.923G NPN Epitaxial Planar Silicon Transistor High hpE> Low-Frequency General-Purpose Amp Applications Applications • Low-frequency, general-purpose amp., various drivers, muting circuit Features • High DC current gain hpE=800 to 3200}

toshiba c3075

Abstract: 2SC3075 C3075
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 s (max) • High collector breakdown voltage: VCEO = 400 V

c3074

Abstract: 2SC3074 C3074 y 2SA1244
Contextual Info: 2SC3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)

c3075

Abstract: 2SC3075
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max) • High collector breakdown voltage: VCEO = 400 V

Contextual Info: TOSHIBA 2SC3075 TOSHIBA TRANSISTOR ? SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS <; r 3 n i * INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS 6.8MAX. (A ) • i^H 5.2 ±0.2

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

c3074

Abstract: Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y
Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ) · Complementary to 2SA1244

lth7

Abstract: 2SC3079M 2SC4013
Contextual Info: ROHM CO LTD 4GE D • 76S6TÌ1 /I ransistors 0005745 7 BRHM 2SC3079M/2SC4013 T-Zl-iS 2SC3079u 2SC4013 y y 3 > h 7 > y ^ 5 isiii^ la Ìiffl/R F Amplifier Epitaxial Planar NPN Silicon Transistors • W f i 't f iill/ D im e n s io n s Unit : mm 1) fT=500M H z Typ. (at 1mA)

Contextual Info: 2SC3076 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240

Contextual Info: Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d • Features 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 ● 2.9 –0.05 ● High power gain PG. High transition frequency fT.

2SA1241

Abstract: 2SC3076 30J40
Contextual Info: TO SH IBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)

2SC3072

Contextual Info: TO SH IBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS (A) MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., 5 .2 1 0 .2 r- • • • I 'l P in 0.6M AX. - t f - High DC Current Gain : hpE = 140~450

2SC3077

Contextual Info: Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing M Di ain sc te on na tin nc ue e/ d Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 ● High power gain PG. High transition frequency fT. Mini type package, allowing downsizing of the equipment and

Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)

Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)

Contextual Info: T O SH IB A 2SC3075 TOSHIBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS < ; r n 3 i * INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. w jiixceuenL o w n c n in g n m e s

Contextual Info: T O SH IB A 2SC3072 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE —140~450 (Vç e = 2V, I ç = 0.5A) h p E -7 0 (Min.) (Vç e = 2V, I ç = 4A)

2SC3071

Abstract: 3CS5 946G
Contextual Info: Ordering number: EN 946G 2SC3071 No.946G NPN Epitaxial Planar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications A pplications •Low-frequency general-purpose amplifiers, various drivers, muting circuits. F e a tu re s • High DC current gain hpE = 500 to 2000 .

Contextual Info: Transistors SMD Type Product specification 2SC3075 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High colletor Breakdown Voltage: VCEO=400V

2SC3077

Abstract: JT MARKING marking AIJ I
Contextual Info: 2SC3077 2SC3077 '> V =1 V NPN y l— -tm /Si NPN Planar U H F igig, îS ê f f l/U H F Amplifier, Mixer • 1$ ^ /F e a tu r e s • PG ^ ^ 0/ H i g h PG . >Wfcik U ¿ ^ ' o / H i g h fT • >3 £Z>êMm A ^ -n T tL ; MINI Type package suitable for small equipment, tape and