2SC3332S Search Results
2SC3332S Price and Stock
Rochester Electronics LLC 2SC3332S-AATRANS NPN 160V 0.7A 3-NP |
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2SC3332S-AA | Bulk | 146,178 | 1,366 |
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Rochester Electronics LLC 2SC3332STRANS NPN 160V 0.7A 3-NP |
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2SC3332S | Bulk | 24,642 | 1,457 |
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onsemi 2SC3332STRANS NPN 160V 0.7A 3-NP |
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2SC3332S | Bulk |
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2SC3332S | 24,642 | 1 |
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onsemi 2SC3332S-AATRANS NPN 160V 0.7A 3-NP |
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2SC3332S-AA | Reel |
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2SC3332S-AA | 129,678 | 1,711 |
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2SC3332S-AA | 146,178 | 1 |
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SANYO Semiconductor Co Ltd 2SC3332S-AANPN Epitaxial Planar Silicon Transistor |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC3332S-AA | 964 | 1 |
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2SC3332S Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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2SC3332S |
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN BIPO 700MA 160V NP | Original | 5 | ||||
2SC3332S |
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2SC3332, 2SC3332R - Bip Transistor 180V 700mA VCE(sat);0.4V max. NPN Single NP | Original | 397KB | 7 | |||
2SC3332S | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 84.45KB | 1 | |||
2SC3332S | Sanyo Semiconductor | PNP/NPN Epitaxial Planar Silicon Transistors | Scan | 425.18KB | 5 | |||
2SC3332S-AA |
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN BIPO 0.7A 160V NP | Original | 5 | ||||
2SC3332S-AA |
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2SC3332 - High Voltage NPN Switching Transistor | Original | 397KB | 7 |
2SC3332S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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C3332
Abstract: 2SC3332S 2sc3332
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Original |
EN1334E 2SC3332 C3332 2SC3332S 2sc3332 | |
8C533
Abstract: 2SC3478-k 2SC3744 2SC3478K 2sc3248 2SC2230Y je5551 2SC238 SANYO NEG KT611
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Original |
2S0668A 2S0757 2SC2383 2S0669A 8F294 TMPT5551 MPS5551M S05551 2SC1654 8C533 2SC3478-k 2SC3744 2SC3478K 2sc3248 2SC2230Y je5551 2SC238 SANYO NEG KT611 | |
Contextual Info: Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications |
Original |
EN1334F 2SC3332 | |
Contextual Info: Ordering number : EN1334E 2SC3332 Bipolar Transistor 180V, 160A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown Adoption of MBIT process Specifications |
Original |
EN1334E 2SC3332 |