2SC338 Search Results

SC3383

Abstract: 1943a 2SC3383 2SA1392
Contextual Info: Ordering number: EN 1 9 4 3 A i i SAXYO I 2SA1392/2SC3383 N0.1943A PNP/ NPN Epitaxial Planar Silicon Transistors AF Amp Applications Features . Adoption of FBET process . AF amp : 2SA1392 Absolute M a x i m a Ratings at Ta=25°C Collector to Base Voltage

2SC3383

Abstract: 2SA1392 ITR03393 ITR03394 ITR03395
Contextual Info: Ordering number:ENN1943B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. unit:mm 2003B [2SA1392/2SC3383] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1

Contextual Info: TO SHIBA TOSHIBA TRANSISTOR 2SC3381 SILICON NPN EPITAXIAL TYPE MONOLITHIC DUAL TYPE 2SC3381 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS RECOM M ENDED FOR CASCODE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AM PLIFIERS 9-5 ±0.3

B0933

Abstract: 2SC7900 2SD234Y 2S0234 2sc3386 2S0255 B0241A b0131 5000N 2S0234Y
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 - 15 20 25 30 35 40 45 -50 55 60 65 70 75 80 -85 -90 >= -2~ 2S0130 2S0130R 2N3507 KT817B 2SC10S0 2SC10S1 2SC830 2S0234G 2S0234 2S0234R 100234 2S0234G-R 2S0130Y 2S02340 2S0234G-0 2S0130BL 2SC3386 2SC338SL

VC 474

Contextual Info: 2SC3380 Silicon NPN Triple Diffused HITACHI Application • High frequency high voltage amplifier • High voltage switch Outline UPAK 1 1. 2. 3. 4. 474 Base Collector Emitter Collector Flange 2SC3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SA1392

Contextual Info: Ordering number:EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. unit:mm 2003A [2SA1392/2SC3383] JEDEC : TO-92 EIAJ : SC-43 SANYO : NF : 2SA1392

2SA1392

Abstract: 2SC3383 ITR03393 ITR03394 ITR03395 ITR03396
Contextual Info: 2SA1392 / 2SC3383 注文コード No. N 1 9 4 3 C 三洋半導体データシート 半導体ニューズ No.N1943A をさしかえてください。 2SA1392 / 2SC3383 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 低周波一般増幅用

BE2L

Contextual Info: 2SC3381 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE MONOLITHIC DUAL TYPE 2SC3381 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AMPLIFIERS 9.5 ± 0.3

Hitachi DSA002755

Abstract: 2SC3380
Contextual Info: 2SC3380 Silicon NPN Triple Diffused Application • High frequency high voltage amplifier • High voltage switch Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO

2SC3382

Abstract: A1391 2SA1391 C338 13 560 KDK SC3382
Contextual Info: Ordering number: EN 1 9 4 2 A iSAXYO 2SA1391/2SC3382 N0.1942A PNP/ NPN Epitaxial Planar Silicon Transistors i Low-Noise AF Amp Applications Features . Adoption of FBET process . AF amp . Low-noise use ; 2SA1391 Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage

2SC3431

Abstract: 2SC3402 2SC3381 2SC3379 2SC3382 2SC3383 2SC3390 2SC3391 2SC3392 2SC3393
Contextual Info: - 156 - MX'Ëtë Ta=25°C, *EPÍáTc=25cC m % tt VcBO « (V) 2SC3379 H S 2SC3380 H i HF PA VcEO (V) IC(DC) (A) 20 Pc m Pc* (W) ICBO (max) (//A) (W) 1.5 10 m ft fé t t (Ta=25'C) hF E Vc b (V) (min) (max) , > , , > (max) (V) Ic / I e (A) VcE (V) [*EPfátypíÍ]

2SC3387

Contextual Info: SavantIC Semiconductor Product Specification 2SC3387 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage ·Fast switching speed APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base

2SC1840

Abstract: 2sc1775 2SC1737 2sc2655 2SC1684 2SC2510 2SC1815 2SC1010 2SC3311A 2SC1740
Contextual Info: - 122 - m « £ Type No. Manuf. m a m z 2SC 1737 2SC 1738 2SC 1739 * 2SC 1740 2SC 1741 ». 2SC 1742 □— A □— A □— A X ^ = n SANYO ÍÜ NEC £ HITACHI * ± a FU JITSU fâ T MATSUSHITA -=L H M ITSUBISHI O — A ROHM 2SC4641 2SC1840 2SC1740 2SC3382

SPICE PARAMETER, sanyo, bipolar transistor

Abstract: 2sc3382-spice 2sc3382spice 2SC338 2SC3382 SPICE sanyo, bipolar transistor 2SC Spice Parameter, Bipolar Transistor
Contextual Info: 2SC3382 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 22.00f NF 1 IKF 165.0m NE 2 NR 1 30.00m IKR NC 2 IRB 300.0u RE 420.0m XTB 1.4 XTI 3 VJE 660.0m TF 350p VTF 5 PTF VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A

2S0187

Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
Contextual Info: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®

2SC3380

Contextual Info: 2SC3380 Silicon NPN Triple Diffused Application • High frequency high voltage amplifier • High voltage switch Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SC3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SA1391

Abstract: 2SC3382 ITR03367 ITR03368 ITR03369
Contextual Info: 2SA1391 / 2SC3382 Ordering number : EN1942B SANYO Semiconductors DATA SHEET 2SA1391 / 2SC3382 PNP / NPN Epitaxial Planar Silicon Transistors Low Noise AF Amp Applications Features • • • Adoption of FBET process. AF amp. Low-noise use. Specifications : 2SA1391

2SC3380

Abstract: DSA003637
Contextual Info: 2SC3380 Silicon NPN Triple Diffused ADE-208-1082A Z 2nd. Edition Mar. 2001 Application • High frequency high voltage amplifier • High voltage switch Outline UPAK 1 3 2 4 Note: Marking is “AS”. 1. Base 2. Collector 3. Emitter 4. Collector (Flange)

Contextual Info: IC Transistors SMD Type Silicon NPN Triple Diffused 2SC3380 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● High frequency high voltage amplifier ● High voltage switch 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1

2SC3380

Abstract: tac l2
Contextual Info: HITACHI 2SC3380 SILICON NPN TRIPLE DlFFUSEO HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER HIGH VOLTAGE SWITCH 4 p i 0.1 i e Max ri ] S t 0.1 X U0S3 m j < n t j 0.48 Ma* 1L- -ir r r 3U - 3.CL L T q It -I” o' I, Uk* Î CVlNW i 5 tjn ! •;< i í/¿ j_ •i CulkCUX

1943a

Abstract: 4j to92 2SC3303 2SC3383 2005A 2sc3363 2SA1392 SC3383 u 5601 1804J
Contextual Info: Ordering number: EN 1943A 2SA1392/2SC3383 PNP/ NPN Epitaxial Planar Silicon Transistors SAXYO i AF Amp Applications Features . Adoption of FBET process . AF amp : 2SA1392 Absolute Maxima Batings at Ta=25°C Collector to Base Voltage CBO Collector to Emitter Voltage vCEO

2SA1391

Abstract: 2SC3382 ITR03367 ITR03368 ITR03369
Contextual Info: 2SA1391 / 2SC3382 Ordering number : EN1942B SANYO Semiconductors DATA SHEET 2SA1391 / 2SC3382 PNP / NPN Epitaxial Planar Silicon Transistors Low Noise AF Amp Applications Features • • • Adoption of FBET process. AF amp. Low-noise use. Specifications : 2SA1391

2SC3381

Abstract: 2SA1349 oq120 2SC338
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SC3381 SILICON NPN EPITAXIAL TYPE MONOLITHIC DUAL TYPE 2SC3381 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AMPLIFIERS 9.5 ±0.3

2SA1349

Abstract: 2SC3381
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SC3381 2SC3381 SILICON NPN EPITAXIAL TYPE MONOLITHIC DUAL TYPE Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS RECOM M ENDED FOR CASCODE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AM PLIFIERS 9 5+0 Ì