2SC341 Search Results

C3419

Abstract: 2SC3419 2SA1356
Contextual Info: 2SC3419 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3419 ○ 中電力増幅用 • 単位: mm : VCE (sat) = 0.25 V (標準) 飽和電圧が低い。 • コレクタ損失が大きい。: PC = 1.2 W (Ta = 25°C) • 2SA1356 とコンプリメンタリになります。

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SC4061K

Abstract: 2SC3415S 2SC4015 SC-72 T146
Contextual Info: 2SC4061K / 2SC3415S / 2SC4015 Transistors Chroma amplifier transistor 300V, 0.1A 2SC4061K / 2SC3415S / 2SC4015 zExternal dimensions (Unit : mm) (2) (3) 0.4 (1) 2SC4061K 0.95 0.95 1.9 2.9 zFeatures 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance.

2SC3413

Abstract: 2SC458 Hitachi DSA0076
Contextual Info: 2SC3413 Silicon NPN Epitaxial ADE-208-1085 Z 1st. Edition Mar. 2001 Application • Low frequency low noise amplifier • HF amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3413 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

Hitachi DSA002755

Contextual Info: 2SC3413 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • HF amplifier Outline 2SC3413 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage

2SC3413

Contextual Info: HITACHI 2SC3413 s il i c o n n p n e p i t a x ia l LOW FREQ UEN CY LOW NOISE AMPLIFIER HF AM PLIFIER „ÖJlC.l I. Erajjiif Colic*.lot 3 But K nK M U iti » r r n H>*| (SPA K) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSO LU TE MAXIMUM RATINGS (Ta=2S°C)

2SC3415

Contextual Info: //Transistors 2SC3415 2SC3415 ' > V 3 > b ' 7 > ' S Z * W E i9 « f f l/ H i g h V o lta g e A m p . T rip le D iffu se d P la n a r N P N S ilic o n T ra n sisto r • ttft • 1] D im e n sio n s U n it : mm (BVc t o = 3 0 (V ^ 2) » « c f t il- .

2SC3413

Abstract: 2SC458 Hitachi DSA00398
Contextual Info: 2SC3413 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • HF amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3413 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

2SC3415S

Abstract: 2SC4015 2SC4061K SC-72 T146 2SC4061
Contextual Info: Chroma amplifier transistor 300V, 0.1A 2SC4061K / 2SC3415S / 2SC4015 Dimensions (Unit : mm) (2) (3) 0.4 (1) 2SC4061K 0.95 0.95 1.9 2.9 Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

2SA1353

Abstract: 2SC3417 ITR03284 ITR03285
Contextual Info: Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions • Ultrahigh-definition CRT display. · Color TV chroma output, high-voltage driver applications.

2SC3415

Contextual Info: 2SC3415 /Transistors E . M & W l7 ° l'— } - M N P N '> > ;= !> b - 7 > v Z $ 2SC3415 Triple Diffused Planar NPN Silicon Transistor ra iiJ E iflS ffl/H ig h Voltage Amp. • rfiiia /D im e n s io n s U n it: mm 1) dsiiS'fliT & -So BVc e o = 300V 3) Wfcffcfi#

2SC3419

Abstract: 2SA1356
Contextual Info: 2SC3419 TO SH IBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VCE (sat) “ 0.25V (Typ.) (In = 500mA, Ig = 50mA) High Collector Power Dissipation : P0 = 1.2W (Ta = 25°C)

2SC3412

Abstract: ta 7176 ta 7176 datasheet 2SK3412
Contextual Info: Ordering number : ENN7176 2SK3412 SANYO Semiconductors DATA SHEET 2SC3412 N-Channel Silicon MOSFET DC / DC Converter Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Package Dimensions Package Dimensions unit : mm 2083B

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC3415 TRANSISTOR NPN 1. EMITTER FEATURES z High Breakdown Voltage z Low Collector Output Capacitance z Ideal for Chroma Circuit 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA1353

Abstract: 2SC3417 ITR03284 ITR03285
Contextual Info: Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions • Ultrahigh-definition CRT display. · Color TV chroma output, high-voltage driver applications.

2SC401

Abstract: 2SC3271 TRANSISTOR 300v 2SC3271 N 2SC3271F 2SC4061K 2SC3415S 2SC4015 SC-72 T146
Contextual Info: 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271 F Transistors Chroma Amplifier Transistor 300V, 0.1 A 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F ! Features External dim ensions (Units: mm) 1) High breakdown voltage. (BVceo=300V) 2) Low collector output capacitance.

2SA1352

Abstract: tp 4056 datasheet 2SC3416
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1352 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V (Min) ·Complement to Type 2SC3416 APPLICATIONS ·Designed for color TV chroma output, high-voltage driver

2SC3415S

Abstract: 2SC4015 SC-72
Contextual Info: 2SC3415S / 2SC4015 Transistors Chroma amplifier transistor 300V, 0.1A 2SC3415S / 2SC4015 !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

TL 2262

Abstract: 2SC2279 te 2304 2257A 2SC2050 2SC2371 2SC2611 2SD467 2sc710 2SC1815
Contextual Info: - J tt tö T fö T M anuf. € = W SANYO 2SC3416 • y'V irV y-yj-y ■y-ytry te T jä T 0 tL 0 tL S 2: 2SC1570 2SD400 2SD826 = # 0 V h a n s B m B ^ 0 tL K $ 2SC2274 2SC1755 2SC1755 CII m s s T ype No. 2SC 2257A 2SC 2258 2SC 2260 J 2SC 2261 ✓ 2SC 226 2 —2SC 2263

2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
Contextual Info: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358

2SC3419

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3419 MEDIMUM POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 03.i±ai . Low Saturation Voltage : VcE sat =0.25V(Typ.) (Ic=500mA, •2 lB=50mA) . High Collector Power Dissipation : Pc=1.2W (Ta=25°C) . Complementary to 2SA1356

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS A U D IO PO W ER AM PLIFIER APPLICATIONS. • • • Low Saturation Voltage : v CE(sat) = -0 .3 2 V (Typ.)(Ic = -500m A , Ig = -50m A ) High Collector Power Dissipation : P c = 1.2W (Ta = 25°C) Complementary to 2SC3419

2SC4061K

Contextual Info: 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Transistors Chroma Amplifier Transistor 300V, 0.1A 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F !External dimensions (Units: mm) (2) (3) 0.4 (1) 2SC4061K 0.95 0.95 !Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance.

c3419

Abstract: 2SC3419 2SA1356 MA61
Contextual Info: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356