2SC357 Search Results

2SC3507

Abstract: 2SC3577
Contextual Info: Power Transistors 2SC3577 1^32852 QQlbMSl 3b3 2SC3577 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching •Features • High speed sw itching • High co llecto r-b a se v oltage V cbo • Good linearity of DC c u rre n t gain

transistor D 1666

Abstract: T 1621 MH xplio tn598 DC-105 2SC3570 T460 PWS300 al111 2 WI xii
Contextual Info: m m & a °p NEC m A 7 - Silicon P o w e r T ra n sisto r ^ T ix r x 2SC3570 N P N = M ij £ f $ ^ '> i; =l > b m & J£m W V ± x m m NPN Silicon Triple Diffused Transistor High Speed, High Voltage Switching Industrial Use 2sc3570!iiiiSJtiiiit ±7N^ 7 f > rmt

2SC3572

Contextual Info: NPN SILICON POWER TRANSISTOR 2SC3572 DESCRIPTION The 2SC3572 is NPN silicon epitaxial transistor designed fo r switching regulator, DC-DC converter and high frequency power PACKAGE DIMENSIONS in m illim eters inches am plifier application. 4.7 MAX. (0.185)

2SC3570

Abstract: D1618
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use in drivers such as

Contextual Info: 2SC3572 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3571 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

1799D

Abstract: 30aA 2SC3576
Contextual Info: O rde rin g n u m b e r: EN 1799D _ 2SC3576 N0.1799D NPN Epitaxial Planar Silicon Transistor SANYO i High hpE, Low-Frequency General-Purpose Amp Applications Applications . LF general-purpose amplifiers, various drivers, muting circuit Features

but46a

Abstract: PEC730
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 -30 2SC251SM 2SC2535 2SC2535 2SC3570 STI401 STI413 IR413 BU129 BUT11 SPT3439 BUT11F BUT11F 2SC2518L MJ425 MJ425 MJ425 BUT46 BU120 ~~6~~1SK 35 40 2S09S7 PMS5K425 SOT1015 BUS11A BUT11A BUW11AF BUX46A

2SC3577

Contextual Info: SavantIC Semiconductor Product Specification 2SC3577 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High breakdown voltage ·High speed APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SC3571

Abstract: 400V to 5V DC Regulator npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC3571 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier

400V voltage regulator

Abstract: 2SC3571 DC DC converter 5v to 400V npn transistors 400V 3A DC DC converter 400V
Contextual Info: Inchange Semiconductor Product Specification 2SC3571 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier

TCA 365

Abstract: 2SC3571
Contextual Info: NPN SILICON POWER TRANSISTOR 2SC 3571 DESCRIPTION The 2SC3571 is NPN silicon epitaxial transistor designed for switching regulator, DC-DC converter and high frequency power in millimeters inches amplifier application. FEATURES PACKAGE DIMENSIONS 10.5 MAX.

2SC3577

Abstract: 2SC3507
Contextual Info: Power Transistors b'iaSflSM □□lüûfc.O 31G • PNCE 2SC3577 PANASONIC IN]>L/ELEK SEm 2SC3577 b^E D Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching ■ Features • High sp eed sw itching • High collector-base voltage

2SC3576

Abstract: ITR05654 ITR05655 ITR05656 ITR05657 ITR05658 ITR05659 VEBO-15V
Contextual Info: Ordering number:ENN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • LF general-purpose amplifiers, various drivers, muting circuit. unit:mm 2033A [2SC3576]

800V PNP

Abstract: 2SC3507 2SC3577
Contextual Info: Power Transistors 2SG3577 bR3SaSE OOlbMSl 3b3 2SC3577 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • • • • High speed switching High collector-base voltage Vcbo Good linearity of DC current gain (Iife)

2SC3541

Abstract: 2SC3584 2SC3542 2SC3566 2SC3586 NEC-F3 2SC3539 2SC3537 2SC3538 2SC3544
Contextual Info: - 162 - n n Ta=25t , *EP(áTc=25tC) m 2SC3537 2SC3538 2SC3539 2SC3541 2SC3542 2SC3544 2SC3545 2SC3547A 2SC3547B 2SC3549 2SC3550 2SC3551 2SC3552 2SC3553 2SC3554 2SC3559 2SC3566 2SC3567 2SC3568 2SC3569 2SC3570 2SC3571 2SC3572 2SC3576 2SC3577 2SC3580 2SC3581

2SC3576

Abstract: VEBO-15V high vebo
Contextual Info: Ordering number:EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • LF general-purpose amplifiers, various drivers, muting circuit. unit:mm 2033 [2SC3576]

2SC3570

Abstract: 358 nec
Contextual Info: NPN SILICON POWER TRANSISTOR 2SC3570 D ESCRIPTIO N The 2SC3570 is NPN silicon epitaxial transistor designed for switching regulator, DC-DC converter and high frequency power PA C KA G E DIM ENSIONS in millimeters inches amplifier application. 10.5 MAX. (0.413 MAX.)

Contextual Info: 2SC3573 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3574

Contextual Info: 2SC3574 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA169

Abstract: 2SC4390 2sc4705 2SC5155
Contextual Info: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589