2SC390 Search Results

2sc3906k

Contextual Info: 2SC4102 / 2SC3906K Datasheet NPN 50mA 120V High Voltage Amplifier transistors lOutline Parameter Value VCEO IC 120V 50mA UMT3 SMT3 Collector Collector Base Base Emitter Emitter 2SC4102 SOT-323 SC-70 lFeatures 1) High Breakdown Voltage (VCEO=120V). 2SC3906K

2SC3902

Abstract: 2SA1507
Contextual Info: SavantIC Semiconductor Product Specification 2SC3902 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1507 ·Large current capacity ·High breakdown voltage APPLICATIONS ·Color TV audio output ,converters, inverters

2SC3902 T

Abstract: 2SA1507 2SC3902
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1507 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3902 APPLICATIONS ·Designed for use in color TV audio output, converters and

DC 5V to DC 100V CIRCUIT DIAGRAM

Abstract: 2SA1514K 2SC3906K T148 marking y5
Contextual Info: FMY5 Transistor General purpose dual transistors FMY5 zExternal dimensions (Unit : mm) (4) 2.9 1.1 1.9 0.95 0.95 (1) (2) (4) (3) 0.8 (5) (5) 0.3 0.15 0.3Min. zCircuit diagram (3) SMT5 1.6 2.8 zFeatures 1) Both the 2SA1514K and 2SC3906K chips in an SMT package.

nec 2501

Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
Contextual Info: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA

Contextual Info: SANYO S E M I C ON DU C T OR CORP E2E D 7 ‘n 7 0 7 b 2SA1510, 2SC3900 000733b S I T -3 7 - f3 " T - 3 5 -// P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistance R1=4.7ki2 2104A Applications . Switching circuits, inverter circuits, interface circuits, driver circuits

2sA1516 transistor

Abstract: 2SA1516 transistor 2sc3907 2SC3907
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications

2sc3902

Abstract: 2sa1507 EN2101E
Contextual Info: Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters Features • • • Large current capacity • Adoption of FBET and MBIT process

2SC3904

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3904 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 1.9±0.1 Collector current

TT106

Abstract: 2SC2389S 2SC4102 2SA1038S 2SA1514K 2SA1579 2SC3906K T106 T146 MARKING CODE 21 SOT-346
Contextual Info: 2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor 120V, 50mA 2SC4102 / 2SC3906K / 2SC2389S !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 2.0

2SC3902

Abstract: 2SC 143 SANYO 2sa1507/2sc3902 equivalent 2SA1507 ITR03822 IC 2 5/TA3722
Contextual Info: 2SA1507 / 2SC3902 注文コード No. N 2 1 0 1 D 三洋半導体データシート 半導体ニューズ No.N2101B をさしかえてください。 2SA1507 / 2SC3902 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高電圧ドライブ用

Contextual Info: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB

Contextual Info: O rdering num ber: EN 2 1 0 5 A 2SA1511/2SC3901 i PN P/ NPN Epitaxial P lanar Silicon T ransistors SA i YO i Sw itching Applications with Bias Resistance ,# Jl;. Applications Ik Features * On-chip bias resistance: Rl-4.7kfi * Small-sized package: SPA •V

2SA1516

Abstract: 2SC3907
Contextual Info: JMnic Product Specification 2SA1516 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC3907 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage

XP6543

Abstract: 25CT5A 9y transistor
Contextual Info: Composite Transistors Panasonic XP6543 Silicon NPN epitaxial planer transistor Unit: mm For low frequency amplification • Features • • High transition frequency fT. Two elements incorporated into one package. ■ Basic Part Number of Element • 2SC3904 x 2 elements

2sa1516

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1516 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 15.9 M A X . High Collector Voltage : VcEO=-180V Min. 03.2±O.2 / . Complementary to 2SC3907 & . Recommend for 80W High Fiderity Audio Frequency Amplifier Output Stage.

2SC3907 toshiba

Abstract: 2SA1516 2SA1516 toshiba TOSHIBA 2SA1516 2SC3907
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2 SA 1516 PO W ER AMPLIFIER APPLICATIONS. U n it in mm • H igh Collector Voltage : V cEO = —180V Min. • Complementary to 2SC3907 • Recommend for 80W High Fiderity Audio Frequency Amplifier O utput Stage. M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: FM Y 5 Transistors FM Y6 General Purpose Dual Transistors I FMY5 •F eatures 1 ) 2SA1514K and 2SC3906K chips are housed in an SMT package. 2 ) PNP and NPN chips are connected in a common emitter configuration. • Absolute maximum ratings (Ta=25°C) Parameter

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K

Contextual Info: Transistors 2SC3904 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 1.9±0.1 Rating Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open)

2SA1514K

Abstract: 2SA1579 2SC3906K 2SC4102
Contextual Info: Transistors 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K 96-92-A41 (96-170-C41) 275

2SC3907

Abstract: 2SA1516
Contextual Info: SavantIC Semiconductor Product Specification 2SC3907 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1516 APPLICATIONS ·Audio and general purpose power amplifier applications ·Recommend for 80W high fidelity audio

C3906K

Abstract: C4102
Contextual Info: 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K Transistors I High-voltage Amplifier Transistor —120V, —50mA 2SA1579 / 2SA1514K + 0 A bsolute m axim um ratings ( 7 8 = 2 5 * 0 ) F e a tu r e s 1 ) High breakdown voltage. ( V c e o = — 120V) 2 ) C om plem ents the 2S C4102/2S C3906K.

2SC3904

Abstract: transistor frequency 1.5GHz gain 20 dB
Contextual Info: Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● 0.65±0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and