2SC449 Search Results

Contextual Info: SILICON NPN TRIPLE DFFUSED TYPE 2SC4497 Unit in mm +05 25 -0.3 H IG H V O L T A G E CONTROL A P P L I C A T I O N S . • High Voltage: VCBO=300V, VCEO=300V • Low Saturation Voltage: VcE sat =0.5V (Max.) • Small Collector Output Capacitance: MAXIMUM R A T IN G S

Contextual Info: Transistors SMD Type Product specification 2SC4497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small collector output capacitance. 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

2SA1721

Abstract: 2SC4497
Contextual Info: 2SC4497 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC4497 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 単位: mm • 高耐圧です。 : VCBO = 300 V, VCEO = 300 V • 飽和電圧が小さい。

A1710

Abstract: c4490 2SC1490 2SA1710 2SC4490 T3G8 AL710
Contextual Info: O rde rin g nu m b e r : EN 3097 2SA1710/2SC4490 No.3097 PNP/NPN Epitaxial Planar Silicon Transistors High-Definiti on CRT Display Video Output Applications I F eatu re s • High breakdown voltage Vce O—300V •Excellent high frequency characteristic

Contextual Info: Ordering number: EN 3097 2SA1710/2SC4490 PNP/NPN Epitaxial Planar Silicon Transistors SAtVO High-Defmition CRT Display Video Output Applications '• iV V y ■' 1 I • Features ■High breakdown voltage V ceo — 300V ■ Excellent high frequency characteristic

pa 2030a

Abstract: 2SC4498 LB 1001 SANYO 2SA1722 k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).

2SC4499

Contextual Info: 2SC4499 L / S Silicon NPN Triple Diffused High Speed and High Voltage Switching Absolute Maximum Ratings Ta = 25°C Item DPAK Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 500 V 4 4 ————————————————————–

2SA1710

Abstract: 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

ITR04363

Abstract: ITR04364 2SA1710 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: 注文コード No. N 3 0 9 7 2SA1710/2SC4490 No. N 3 0 9 7 20400 2SA1710 / 2SC4490 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイビデオ出力用 ・高耐圧である（VCEO ≧ 300V）

sanken transistor

Abstract: 2SC4494
Contextual Info: SSE D F ÎT ÏÎÏÎÏ1 2SC4495 2SC4495 Unit VcBO 60 80 V VcEO 40 50 V V ebo 6 V lc 3 A 1 Ib Ti Tstg lc — V c e Application Example : "C —5 5 ~ + 1 5 0 “C ' * • Outline Drawing 4 . .F M 2 0 General Purpose Electrical Characteristics

Contextual Info: 2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC4497 High Voltage Control Applications • Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

Hitachi DSA00164

Contextual Info: 2SC4499 L /(S) Silicon NPN Triple Diffused Application High speed and high voltage switching Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SC4499(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SC4493

Abstract: transistor KT 209 2049C
Contextual Info: Ordering number:EN3099 NPN Triple Diffused Planar Silicon Transistor 2SC4493 High-Voltage Amplifier, High-Voltage Switching Applications Package Dimensions unit:mm 2049C [2SC4493] 10.2 4.5 8.8 1.3 20.9 1.6 11.5 • High breakdown voltage. · Small Cob. · High reliability Adoption of HVP process .

2SC4748

Abstract: 2SC5306 K20-K k08 transistor
Contextual Info: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136

ITR07116

Abstract: ITR07117 ITR07118 ITR07119 2SC4491
Contextual Info: Ordering number:ENN3036 NPN Epitaxial Planar Silicon Transistor 2SC4491 L Load Various Drivers Switching Applications Applications Package Dimensions • Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). unit:mm

2SA1721

Abstract: 2SC4497
Contextual Info: TO SH IBA 2SC4497 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC4497 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS + 0.5 2.5-0.3 + 0.25 High Voltage : Vcbq-SOOV, V0e q = 3OOV Low Saturation Voltage : Vq ^ (sat) —0-5V (Max.) Small Collector Output Capacitance

2SC4495

Abstract: FM20
Contextual Info: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz

2SA1721

Abstract: 2SC4497
Contextual Info: 2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC4497 High Voltage Control Applications Unit: mm • High voltage: VCBO = 300 V, VCEO = 300 V · Low saturation voltage: VCE (sat) = 0.5 V (max) · Small collector output capacitance: Cob = 3 pF (typ.)

Contextual Info: 2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC4497 High Voltage Control Applications • Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

2SC4491

Contextual Info: Ordering number:EN3036 NPN Epitaxial Planar Silicon Transistor 2SC4491 L Load Various Drivers Switching Applications Applications Package Dimensions • Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). unit:mm

2sc4490

Abstract: 2SA1710 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

Contextual Info: Reliability Tests Report Product Name: 2SC4497 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC4494

Abstract: 2SC4495 FM20
Contextual Info: A b so lu te M a x im u m R a t in g s 2SC4495 VcBO 60 80 Unit V VcEO 40 50 V V ebo 6 V lc 3 A 1 Ib Ti Tstg lc — V c e "C —5 5 ~ + 1 5 0 “C ' Application Example : * • Outline Drawing 4 . . F M 2 0 General Purpose Electrical C h a ra c te ristics

Contextual Info: Ordering number:ENN3099 NPN Triple Diffused Planar Silicon Transistor 2SC4493 High-Voltage Amplifier, High-Voltage Switching Applications Package Dimensions unit:mm 2049C [2SC4493] 10.2 4.5 8.8 1.3 20.9 1.6 11.5 • High breakdown voltage. · Small Cob. · High reliability Adoption of HVP process .