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    2SC469 Search Results

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    2SC469 Price and Stock

    Rochester Electronics LLC 2SC4696-AN

    NPN 0.5A 80V DARLINGTON
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    DigiKey 2SC4696-AN Bulk 1,402
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    Panasonic Electronic Components 2SC4691J0L

    TRANS NPN 40V 0.1A SSMINI3
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    DigiKey 2SC4691J0L Digi-Reel 1
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    2SC4691J0L Cut Tape
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    Rochester Electronics LLC 2SC4695-TB-E

    BIP NPN 0.5A 20V
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    DigiKey 2SC4695-TB-E Bulk 888
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    Rochester Electronics LLC 2SC4694-TL-E

    TRANSISTOR
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    DigiKey 2SC4694-TL-E Bulk 6,662
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    Aptina Imaging 2SC4694-TL-E

    Trans GP BJT NPN 20V 0.5A 150mW 3-Pin Case MCP
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    Verical 2SC4694-TL-E 170,750 8,153
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    Find more 2SC469 price and stock on Findchips.com

    2SC469 Datasheets (98)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC469 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC469 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC469 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC469 Unknown Cross Reference Datasheet Scan PDF
    2SC469 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC469 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC469 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC469 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC469 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC469 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC469 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC4690 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(N)IS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(70W); Part Number: 2SA1805 Original PDF
    2SC4690 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC4690 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4690 Unknown Silicon NPN Transistor Scan PDF
    2SC4690 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4690 Unknown Scan PDF
    2SC4690 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4690 Toshiba Silicon NPN transistor for power amplifier applications Scan PDF
    2SC4690-O Toshiba 2SC4690 - TRANSISTOR 10 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16F1A, 3 PIN, BIP General Purpose Power Original PDF

    2SC469 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output


    Original     		PDF 2SA1805 2SC4690 2-16F1A

    2SC4691J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01


    Original     		PDF 2002/95/EC) 2SC4691J SC-89 2SC4691J SC-89

    2SC4692

    Abstract: Hitachi DSA002755
    Text: 2SC4692 Silicon NPN Triple Diffused Application EDTV/HDTV horizontal deflection output Features • High speed switching 0.5 µs Max • High breakdown voltage V CBO = 1500 V • Isolated package; TO-3PFM Outline 2SC4692 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC4692 2SC4692 Hitachi DSA002755

    2SC4691

    Abstract: No abstract text available
    Text: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SC4691 2SC4691

    2SC4695

    Abstract: No abstract text available
    Text: Ordering number:EN3486 NPN Epitaxial Planar Silicon Transistor 2SC4695 Low-Frequency General-Purpose Amplifier, Muting Applications Package Dimensions unit:mm 2018B 0.4 3 0.5 [2SC4695] 0.16 0 to 0.1 0.95 0.95 2 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SANYO : CP


    Original     		PDF EN3486 2SC4695 2018B 2SC4695] VEBO25V) 2SC4695applied 2SC4695

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-speed switching • Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2002/95/EC) 2SC4691G

    2SC4691J

    Abstract: SC-89
    Text: Transistors 2SC4691J Silicon NPN epitaxial planar type For high speed switching 1.00±0.05 • Features 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) Symbol Rating Unit Collector to base voltage VCBO 40 V Collector to emitter voltage


    Original     		PDF 2SC4691J SC-89 2SC4691J SC-89

    2SC4694

    Abstract: ITR07428 ITR07429 ITR07430 ITR07431 ITR07432
    Text: Ordering number:ENN3485 NPN Epitaxial Planar Silicon Transistor 2SC4694 Low-Frequency General-Purpose Amplifier, Muting Applications Package Dimensions unit:mm 2059B 0.3 0.15 0.2 0.425 [2SC4694] 3 0 to 0.1 0.425 2.1 • Adoption of MBIT process. · High DC current gain.


    Original     		PDF ENN3485 2SC4694 2059B 2SC4694] VEBO25V) 2SC4694 ITR07428 ITR07429 ITR07430 ITR07431 ITR07432

    A1805

    Abstract: 2SA1805 2SC4690
    Text: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output


    Original     		PDF 2SA1805 2SC4690 A1805 2SA1805 2SC4690

    C4690

    Abstract: 2SA1805 2SC4690
    Text: 2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1805 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original     		PDF 2SC4690 2SA1805 C4690 2SA1805 2SC4690

    2SA1805

    Abstract: 2SC4690
    Text: JMnic Product Specification 2SA1805 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4690 APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage PINNING see Fig.2


    Original     		PDF 2SA1805 2SC4690 -140V; 2SA1805 2SC4690

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SC4691J

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC4691 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 40 V Collector-emitter voltage (E-B short)


    Original     		PDF 2SC4691

    2SC4691

    Abstract: No abstract text available
    Text: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 0.2+0.1 –0.05 • Features 1˚ Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current


    Original     		PDF 2SC4691 2SC4691

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4690 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4690 PO W ER AM PLIFIER APPLICATIONS U nit in mm . 1 5 .8 1 0 .5 i r • Complementary to 2SA1805 • Recommend for 70W High Fidelity Audio Frequency Amplifier ?S3.6± 0.2 V output Stage.


    OCR Scan     		PDF 2SC4690 2SA1805 961001EAA2'

    2SA1805

    Abstract: 2SC4690
    Text: 2SA1805 TO SH IBA 2 S A 1 805 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.810.5 Complementary to 2SC4690 Recommend for 70W High Fidelity Audio Frequency Amplifier output Stage. i 0 3.6 ±0.2 3.5 MAXIMUM RATINGS Tc = 25°C


    OCR Scan     		PDF 2SA1805 2SC4690 2-16F1A 2SA1805

    Untitled

    Abstract: No abstract text available
    Text: H ITA CHI 2SC4693-Silicon NPN Epitaxial Planer VHF Wide Band Amplifier Features T O -9 2M O D II I IP • High gain bandwidth product fx = 2.5 GHz Typ. • Large collector power dissipation Pc = 900 mW Table 1 Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		PDF 2SC4693------------Silicon vol50 2SC4693

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3485 No.3485 2SC4694 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications F eatu res • Adoption of FBET process • High DC current gain •H igh Vebo V e b o = 25V • High reverse hpE (150 typ)


    OCR Scan     		PDF 2SC4694-applied 7190MH 2SC4694

    2SA1805

    Abstract: 2SC4690
    Text: TOSHIBA 2SC4690 2SC4690 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE • Complementary to 2SA1805 • Recommend for 70W High Fidelity Audio Frequency Amplifier output Stage. Unit in mm . 1 5 . 8 ± 0.5 i 3.5 <¿3-610.2 MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		PDF 2SC4690 2SA1805 2-16F1A 961001EAA2' 2SA1805 2SC4690

    2SC4699K

    Abstract: 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246
    Text: b ' 7 > i s Z £ /Transistors 2SC4699K/2SC4700 2SC 4699K 2SC 4700 Epitaxial Planer NPN Silicon Transistor M M Z 'f For High-Speed Switching • ÿH férl'ii 0/D im ensions Unit : mm 2SC4689K to ff= 2SC4700 2 .0 ± 0 ,Z 2 .9 ± 0 .2 22ns (Typ.) • I —0.1


    OCR Scan     		PDF 2SC4699K/2SC4700 2SC4699K 2SC4700 10mA/1mA) 2SC4699K SC-59 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246

    crt 1700

    Abstract: transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094
    Text: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package T0-3P-FM TO-3 Type Number 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2SD2299 2SD2300


    OCR Scan     		PDF 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 crt 1700 transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094

    Untitled

    Abstract: No abstract text available
    Text: 2SC4692 Silicon NPN Triple Diffused HITACHI Application EDTV/HDTV horizontal deflection output Features • High speed switching 0.5 ps Max • High breakdown voltage VCB0 = 1500 V • Isolated package; TO-3PFM Outline T O -3 P F M 1. B a se 2. C o lle c to r


    OCR Scan     		PDF 2SC4692 D-85622

    Untitled

    Abstract: No abstract text available
    Text: 2SC4692 Silicon NPN Triple Diffused HITACHI Application EDTV/HDTV horizontal deflection output Features • High speed switching 0.5 |_is Max • High breakdown voltage VCB0 = 1500 V • Isolated package; TO-3PFM Outline TO -3PFM 1. Base 2. Collector 3. Emitter


    OCR Scan     		PDF 2SC4692

    2SC4694

    Abstract: TA11
    Text: Ordering num ber: EN 3485 SM Ê YO i No.3485 2SC4694 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications F eatu res • Adoption of FBET process • High DC current gain • High V eb o V e b o —25V • High reverse hpE (150 typ)


    OCR Scan     		PDF 2SC4694 2SC4694-applied 2SC4694 TA11