2SC469 Search Results

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1805 POW ER AM PLIFIER APPLICA TIO N S U n it in mm j 1 5 .8 ± 0 .5 | • C om p lem en tary to 2SC4690 • R ecom m end for 70W H ig h F id e lity A udio F req u en cy A m plifier •n 3.6 MAX { o u tp u t S tage. RATING

Contextual Info: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output

2SC4691J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01

Contextual Info: TOSHIBA 2SC4690 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4690 PO W ER AM PLIFIER APPLICATIONS U nit in mm . 1 5 .8 1 0 .5 i r • Complementary to 2SA1805 • Recommend for 70W High Fidelity Audio Frequency Amplifier ?S3.6± 0.2 V output Stage.

2SC4692

Abstract: Hitachi DSA002755
Contextual Info: 2SC4692 Silicon NPN Triple Diffused Application EDTV/HDTV horizontal deflection output Features • High speed switching 0.5 µs Max • High breakdown voltage V CBO = 1500 V • Isolated package; TO-3PFM Outline 2SC4692 Absolute Maximum Ratings Ta = 25°C

2SC4691

Contextual Info: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment

2SA1805

Abstract: 2SC4690
Contextual Info: 2SA1805 TO SH IBA 2 S A 1 805 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.810.5 Complementary to 2SC4690 Recommend for 70W High Fidelity Audio Frequency Amplifier output Stage. i 0 3.6 ±0.2 3.5 MAXIMUM RATINGS Tc = 25°C

2SC4695

Contextual Info: Ordering number:EN3486 NPN Epitaxial Planar Silicon Transistor 2SC4695 Low-Frequency General-Purpose Amplifier, Muting Applications Package Dimensions unit:mm 2018B 0.4 3 0.5 [2SC4695] 0.16 0 to 0.1 0.95 0.95 2 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SANYO : CP

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-speed switching • Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and

2SC4691J

Abstract: SC-89
Contextual Info: Transistors 2SC4691J Silicon NPN epitaxial planar type For high speed switching 1.00±0.05 • Features 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) Symbol Rating Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

Contextual Info: H ITA CHI 2SC4693-Silicon NPN Epitaxial Planer VHF Wide Band Amplifier Features T O -9 2M O D II I IP • High gain bandwidth product fx = 2.5 GHz Typ. • Large collector power dissipation Pc = 900 mW Table 1 Absolute Maximum Ratings Ta = 25 °C

2SC4694

Abstract: ITR07428 ITR07429 ITR07430 ITR07431 ITR07432
Contextual Info: Ordering number:ENN3485 NPN Epitaxial Planar Silicon Transistor 2SC4694 Low-Frequency General-Purpose Amplifier, Muting Applications Package Dimensions unit:mm 2059B 0.3 0.15 0.2 0.425 [2SC4694] 3 0 to 0.1 0.425 2.1 • Adoption of MBIT process. · High DC current gain.

A1805

Abstract: 2SA1805 2SC4690
Contextual Info: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output

C4690

Abstract: 2SA1805 2SC4690
Contextual Info: 2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1805 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

2SA1805

Abstract: 2SC4690
Contextual Info: JMnic Product Specification 2SA1805 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4690 APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage PINNING see Fig.2

2SA1805

Abstract: 2SC4690
Contextual Info: TOSHIBA 2SC4690 2SC4690 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE • Complementary to 2SA1805 • Recommend for 70W High Fidelity Audio Frequency Amplifier output Stage. Unit in mm . 1 5 . 8 ± 0.5 i 3.5 <¿3-610.2 MAXIMUM RATINGS Ta = 25°C

2SC4699K

Abstract: 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246
Contextual Info: b ' 7 > i s Z £ /Transistors 2SC4699K/2SC4700 2SC 4699K 2SC 4700 Epitaxial Planer NPN Silicon Transistor M M Z 'f For High-Speed Switching • ÿH férl'ii 0/D im ensions Unit : mm 2SC4689K to ff= 2SC4700 2 .0 ± 0 ,Z 2 .9 ± 0 .2 22ns (Typ.) • I —0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: Transistors 2SC4691 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 40 V Collector-emitter voltage (E-B short)

crt 1700

Abstract: transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094
Contextual Info: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package T0-3P-FM TO-3 Type Number 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2SD2299 2SD2300

Contextual Info: 2SC4692 Silicon NPN Triple Diffused HITACHI Application EDTV/HDTV horizontal deflection output Features • High speed switching 0.5 ps Max • High breakdown voltage VCB0 = 1500 V • Isolated package; TO-3PFM Outline T O -3 P F M 1. B a se 2. C o lle c to r

2SC4691

Contextual Info: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 0.2+0.1 –0.05 • Features 1˚ Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current

Contextual Info: 2SC4692 Silicon NPN Triple Diffused HITACHI Application EDTV/HDTV horizontal deflection output Features • High speed switching 0.5 |_is Max • High breakdown voltage VCB0 = 1500 V • Isolated package; TO-3PFM Outline TO -3PFM 1. Base 2. Collector 3. Emitter

2SC4694

Abstract: TA11
Contextual Info: Ordering num ber: EN 3485 SM Ê YO i No.3485 2SC4694 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications F eatu res • Adoption of FBET process • High DC current gain • High V eb o V e b o —25V • High reverse hpE (150 typ)