2SC4796 Search Results

Hitachi DSA00164

Contextual Info: 2SC4796 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter

crt 1700

Abstract: transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094
Contextual Info: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package T0-3P-FM TO-3 Type Number 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2SD2299 2SD2300

Contextual Info: HITACHI 2SC4796-Silicon NPN Triple Diffused Application TO-3PFM TV / character display horizontal deflection output Features • High speed switching tf < 0.6 us • High breakdown voltage VCBO= I7 0 0 V • Isolated package TO-3PFM 1. Base 2. Collector

Contextual Info: 2SC4796 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High speed switching tf < 0.6 • |js High breakdown voltage VCB0 = 1700 V • Isolated package TO-3PFM Outline 2SC4796 Absolute Maximum Ratings Ta = 25 °C

Contextual Info: 2SC4796 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High speed switching tf < 0.6 jis • High breakdown voltage VCbo = 1700 V • Isolated package TO-3PFM Outline TO -3PFM 2SC4796 Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC4796 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High speed switching tf < 0.6 ps • High breakdown voltage • Isolated package VCB0= 1700 V TO-3PFM Outline I 2. C o lle c to r 3. E m itte r

2SC2820

Abstract: 2SD1094 2SC2819 2SC4739 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747
Contextual Info: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package Type Number 2SC4589 2SC4692 2SC4744 VCEO V (V) 12 . 1500 800 2SC4747 2SC4796 T0-3P-FM 2SC4797 900 1700 2SC4878 ' 2SC4879 2SD2299

2SC4795

Abstract: 2SC4792 2sc4786 2sc4831 2SC4833 2SC4769 2SC4770 2SC4774 2SC4812 2SC4776M
Contextual Info: - 214 - Ta=25eC, *EP(àTc=25tï m 2SC4769 2SC411C 2SC4774 2SC4775 2SC4776M 2SC4777 2SC4778 2SC4779S 2SC4782 2SC4783 2SC4786 2SC4787 2SC4789 2SC4792 2SC4795 2SC4796 2SC4797 2SC4799 2SC4800 2SG4801 2SC4802 2SC4803 2SC4805 2SC4810 2SC4811 2SC4812 2SC4813 2SC4815

2SC4796

Contextual Info: 2SC4796 Silicon NPN Triple Diffused Application TO–3PFM TV / character display horizontal deflection output Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM 1 1. Base 2. Collector 3. Emitter

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

2SC4795

Abstract: 2SC4834 SC-59A 2SC4779 2sc4786 2SC4769 2SC4770 2SC4774 2SC4792 2SC4776M
Contextual Info: 215 - iS MHz Vce (V) 5 12 12 12 12 12 10 6 300 10 800 10 7000 150* 150* 120* 2000* 400* 50 13* 13* 120* 8 10 10 10 5 10 20 10 14 (Ta=25‘C) SW Time Cob Cre tf tstg (max) (max) (A) (m s ) ( m s ) (PF) (pF) 3 0.2 3 0.2 0.01 1.7 -0.002 3.5 -0.002 3.5 -0.002

2SC4751

Abstract: on 4772 2SC4767 2SC4667 2SC3892A 2SC4749 2SC3124 2SC4589 2sd1850 2SD2336
Contextual Info: 198 - £ S « Type No. Manuf. 2SC 4740 H m SANYO 3C 2Ë TOSHIBA NEC S ÍL HITACHI * ± a FUJITSU T MATSUSHITA Ÿà 2SC 4745 a B 4 4 4 4 2SC3894 2SD1432 2SD2372 2SC 4748 J B IL 2SC383G 2SC3889A 2SD2373 2SC 4747 > 0 4 2SC3897 2SC4560 2SC 4748 2SC3277 2SC3306

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SC3998

Abstract: 2sc4640 4793 2SC1815 2sd637 2sc2555 2SC4804 C4463 4802 2SD1546
Contextual Info: - m « Type No. a € Manuf. H * SANYO X £ TOSHIBA B Is NEC B 3¿ HITACHI S ± Ä FUJITSU fâ T MATSUSHITA 2SC 4773 □— A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 * □— A 2SC4407 2SC4250 2SC44S3 2SC4670 2SC 4775 □— A 2SC 4776 □— A 2SC4640 2SC1815

2sc2899 transistor

Abstract: 2SC4739 2SD1527 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899
Contextual Info: 24 HIT ACH I/ O P T O E L E C T R O N I C S blE ]> • 44^205 0013776 TO? ■ HIT4 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

BU4508DX equivalent

Abstract: ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent
Contextual Info: Philips Semiconductors Power Bipolar Transistors Cross reference list ”PHILIPS TYPE” REFERS TO CLOSEST PHILIPS ALTERNATIVE OR DIRECT EQUIVALENT IF AVAILABLE. Always consider the application and compare data specifications before recommending suitable Philips type

2sc2899 transistor

Abstract: 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979 2SD781
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.