2SC4909 Search Results

2SC4909

Abstract: ITR07739 ITR07740 ITR07741
Contextual Info: Ordering number:ENN4410 NPN Epitaxial Planar Silicon Transistor 2SC4909 Muting Circuits, Drivers Package Dimensions unit:mm 2059B [2SC4909] 0.3 0.15 0.2 • High DC current gain. · On-chip bias resistance R1=47kΩ, R2=47kΩ . · Ultrasmall package permitting applied sets to be

EN4410

Abstract: ic marking 4410 FXK 53 marking jn bx-0302 2SC4909
Contextual Info: Ordering n u m b e r:E N 4 4 1 0 2SC4909 No.4410 NPN Epitaxial Planar Silicon Transistor SM YO i Muting Circuits, Drivers F e a tu re s • High DC current gain. •On-chip bias resistance Ri = 47kO, R2 = 47kO . • Very small-sized package perm itting 2SC4909-applied sets to be made smaller and slimmer.

2SC4909

Contextual Info: Ordering number:EN4410 NPN Epitaxial Planar Silicon Transistor 2SC4909 Muting Circuits, Drivers Package Dimensions unit:mm 2059B [2SC4909] 0.3 0.15 0.2 • High DC current gain. · On-chip bias resistance R1=47kΩ, R2=47kΩ . · Very small-sized package permitting 2SC4909applied sets to be made smaller and slimmer.

ic chip ic 4410

Abstract: 4410 ic
Contextual Info: O rd e rin g n u m b e r: E N 4 4 1 0 No.4410 SA%YO 2SC4909 NPN Epitaxial Planar Silicon Transistor Muting Circuits, Drivers F eatu res • High DC current gain. • On chip bias resistance Ri = 47kii, R2 = 47kf2 . •Very small-sized package perm itting 2SC4909-applied sets to be made sm aller and slimmer.

2SC4909

Abstract: 2SC4919 DSA0012734 VEBO-15V BX88
Contextual Info: Ordering number:EN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions unit:mm 2106A [2SC4909] 0.3 0.75 0.6 0.4 • Very small-sized package permitting 2SC4919applied sets to be made smaller and slimmer.

2SA169

Abstract: 2SC4390 2sc4705 2SC5155
Contextual Info: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s

2SC4909

Abstract: 2SC4919 ITR07753 ITR07754 ITR07755 ITR07756 marking DA
Contextual Info: Ordering number:ENN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions • Ultrasmall package permitting applied sets to be small and slim. · Small output capacitance. · Low collector-to-emitter saturation voltage.

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

FMA 1622

Abstract: 2SA1528 2SA1529 2SA1864 2SA1865 2SA1866 2SC3920 2SC3921 2SC3922 2SC3923
Contextual Info: Continued from previous page Absolute maximum ratings Package Device Applications type | Vc b O V i VCEO (V) V eb o (V) te Pc m (mW) Electrical characteristics (Ta = 25 °C) ! Icbo I Icbo 1 [ (4 ) max @ Vc b max m hFE Vc b @ VcE VCE hre (V) (V) •ic *r @

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

Contextual Info: Ordering number:ENN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions • Ultrasmall package permitting applied sets to be small and slim. · Small output capacitance. · Low collector-to-emitter saturation voltage.

V1525

Abstract: 2SC3114 2SA1692 2SC3068 High Vebo 001S4 2SC3071 2sc3495
Contextual Info: b3E í 7W07b SAfÍYO 001S42Q ISS « T S A J H i g h “ h p g H i g h V g ß Q T r a n s i s t o r s SANYO SEMICONDUCTOR CORP Case outlines unit:11ml SANYO :SMCP »Me— 0.1 B’ -Base n -Jlector ltter ale H i g h —hFE, H1g h —VEBO T r a n s i s-toi-s

audio amplifier

Abstract: 2SC4211 2SA1528 2SA1529 2SA1864 2SA1865 2SA1866 2SC3920 2SC3921 2SC3922
Contextual Info: Continued from previous page I \ Absolute maximum ratings j Package type Device Applications I VCBO V VCEO M Vebo W : Electrical characteristics (Ta = 25 °C) ! Icbo m a x te Pc * [ @ Vcb t»FE @ VcE j Icbo max VC8 : (fiA) { (V ) * r @ Vce •te I •te

Contextual Info: H i gh - hp g High V gg QT r an si s to r s ale Hi g h — hF E, 1 7 A B H ig h — V E B O Ti-ansi s t o r sSANYO:SMCP Case outlines unit:mm SANYO:MCP 1 :B, 2 :E, 3 :C. ” » p 1 i ca t i o n s A tp •+■ *1 « V 1* *—* *—* * High hFE (500 to 3200)

Contextual Info: SA/iYO Lists for- T y p e No. 2SA type_ Type No. ma rk- Package ing 2SA 1252 D • C p E • 2 SA 125 6 C p 2 SA 125 7 G • C p 2 SA 13 3 1 0 • C p A L 2SA1338 C p 2 SA 13 4 1 B L c p 2 SA 134 2 C L c p 2 SA 134 3 D L c p 2 SA 1344 E L c p

2sc3495

Abstract: 2SA1692
Contextual Info: SAfiYO High-hpg ole H i gin — h F E . H i g h — V E B O F e a t u r e s ♦ ♦ ♦ ♦ High V^ßQ T r a n s i s t o r s T r - a n s i s t o r s l :Base SANYO:SMCP 2:Emi tter 3 -Co 1lector X cat. i o n s A p p l c High hFE 500 to 3200 * AF amp High VEBO S 15V